Inventor · disambiguated record
Taro Nagahama
Also filed as: NAGAHAMA TARO
9 granted patents·1 pending application·180 citations·filing 2002–2014
90Inventor score
Top patents by PatentIndex Score
10 records- 0196US7514160B2Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)NAT INST OF ADVANCED IND SCIEN·Filed 2007·Granted Apr 7, 2009·50 cites·6 claims
- 0295US8680632B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2011·Granted Mar 25, 2014·25 cites·19 claims
- 0393US8107281B2Magnetoresistive element and magnetic memoryKAI TADASHI·Filed 2010·Granted Jan 31, 2012·23 cites·12 claims
- 0491US7220498B2Tunnel magnetoresistance elementJAPAN SCIENCE & TECH AGENCY·Filed 2002·Granted May 22, 2007·44 cites·6 claims
- 0589US9087980B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Jul 21, 2015·8 cites·19 claims
- 0689US8208292B2Magnetoresistive element and magnetic memoryKAI TADASHI·Filed 2012·Granted Jun 26, 2012·13 cites·15 claims
- 0787US9219227B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Dec 22, 2015·6 cites·20 claims
- 0882US8705269B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2011·Granted Apr 22, 2014·6 cites·18 claims
- 0981US8502331B2Magnetoresistive effect element, magnetic memoryKITAGAWA EIJI·Filed 2011·Granted Aug 6, 2013·5 cites·14 claims
- 1048US2013288397A1Magnetoresistive effect element, magnetic memory, and method of manufacturing magentoresistive effect elementTOSHIBA KK·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →