Magnetoresistive effect element, magnetic memory, and method of manufacturing magentoresistive effect element

Abstract

According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

What is claimed is: 
     
         1 . A method for manufacturing a magnetoresistive effect element, comprising:
 depositing stacked layers on a substrate, the stacked layers comprising a first magnetic material having a multi-layer structure depositing alternately a first film and a second film, a second magnetic material, and a nonmagnetic material deposited between the first magnetic layer and the second magnetic layer, the first film comprising an element selected from a first group including Tb, Dy, and Gd and an element selected from a second group including Co and Fe, and the second film comprising an element selected from the second group; and,   processing the stacked layer to form a magnetoresistive effect element comprising a first magnetic layer having perpendicular magnetic anisotropy to a film surface, a second magnetic layer having magnetic anisotropy in the direction perpendicular to the film surface, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.   
     
     
         2 . The method for manufacturing the magnetoresistive effect element of  claim 1 , wherein the first magnetic layer comprises amorphous phases and crystals whose particle sizes are 0.5 nm or more. 
     
     
         3 . The method for manufacturing the magnetoresistive effect element of  claim 1 , wherein the first film has a film thickness of 2 nm or less. 
     
     
         4 . The method for manufacturing the magnetoresistive effect element of  claim 1 , wherein the first film includes 25 atomic % or more of an element selected from the first group. 
     
     
         5 . The method for manufacturing the magnetoresistive effect element of  claim 1 , further comprising:
 forming, during formation of the stacked layer, an interface layer comprising a third film at a side of the nonmagnetic material, a fourth film at side of the multi-layer structure, and a fifth film provided between the third film and the fourth film, between the nonmagnetic material and the multi-layer film,   the third film comprising at least two elements selected from a third group including Co, Fe, and B, the fourth film comprising at least two elements selected from the third group, and the fifth film comprising an element selected from a fourth group including Ta, W, Nb, and Mo.   
     
     
         6 . The method for manufacturing the magnetoresistive effect element of  claim 1 , further comprising:
 forming, during formation of the stacked layer, an interface layer comprising a third film at a side of the nonmagnetic material and a fourth film between the third film and the multi-layer film, between the nonmagnetic material and the multi-layer film, the third film comprising at least two elements selected from a third group including Co, Fe, and B, and the fourth film comprising an element selected from a fourth group including Ta, W, Nb, and Mo.