Inventor · disambiguated record
Shinji Yuasa
Also filed as: YUASA SHINJI
40 granted patents·16 pending applications·430 citations·filing 2000–2024
98Inventor score
Files withAIST8JAPAN SCIENCE & TECH AGENCY8TOSHIBA KK7NAT INST OF ADVANCED IND SCIEN6CANON ANELVA CORP4
Top patents by PatentIndex Score
56 records- 0196US11233193B2Method of manufacturing a magnetorestive random access memeory (MRAM)JAPAN SCIENCE & TECH AGENCY·Filed 2020·Granted Jan 25, 2022·3 cites·20 claims
- 0296US10367138B2Magnetic tunnel junction deviceJAPAN SCIENCE & TECH AGENCY·Filed 2017·Granted Jul 30, 2019·4 cites·14 claims
- 0396US9608198B2Magnetic tunnel junction deviceJAPAN SCIENCE & TECH AGENCY·Filed 2015·Granted Mar 28, 2017·5 cites·6 claims
- 0496US7514160B2Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)NAT INST OF ADVANCED IND SCIEN·Filed 2007·Granted Apr 7, 2009·50 cites·6 claims
- 0595US8680632B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2011·Granted Mar 25, 2014·25 cites·19 claims
- 0695US8319263B2Magnetic tunnel junction deviceYUASA SHINJI·Filed 2010·Granted Nov 27, 2012·12 cites·4 claims
- 0795US6710986B1Tunneling magnetoresistive head and a process of tunneling magnetoresistive headHITACHI LTD·Filed 2000·Granted Mar 23, 2004·55 cites·17 claims
- 0894US8405134B2Magnetic tunnel junction deviceYUASA SHINJI·Filed 2012·Granted Mar 26, 2013·14 cites·4 claims
- 0994US7884403B2Magnetic tunnel junction device and memory device including the sameJAPAN SCIENCE & TECH AGENCY·Filed 2005·Granted Feb 8, 2011·22 cites·8 claims
- 1093US8107281B2Magnetoresistive element and magnetic memoryKAI TADASHI·Filed 2010·Granted Jan 31, 2012·23 cites·12 claims
- 1193US7764136B2Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting elementJAPAN SCIENCE & TECH AGENCY·Filed 2006·Granted Jul 27, 2010·56 cites·7 claims
- 1292US10680167B2Magnetic tunnel junction deviceJAPAN SCIENCE & TECH AGENCY·Filed 2019·Granted Jun 9, 2020·3 cites·15 claims
- 1391US10388347B2Non-collinear magnetoresistive deviceAIST·Filed 2016·Granted Aug 20, 2019·6 cites·8 claims
- 1491US9123463B2Magnetic tunnel junction deviceJAPAN SCIENCE & TECH AGENCY·Filed 2013·Granted Sep 1, 2015·7 cites·2 claims
- 1591US7220498B2Tunnel magnetoresistance elementJAPAN SCIENCE & TECH AGENCY·Filed 2002·Granted May 22, 2007·44 cites·6 claims
- 1690US2024284804A1Method of manufacturing a magnetoresistive random access memory (mram)GODO KAISHA IP BRIDGE 1·Filed 2024·Application pending·0 cites
- 1789US9087980B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Jul 21, 2015·8 cites·19 claims
- 1889US8208292B2Magnetoresistive element and magnetic memoryKAI TADASHI·Filed 2012·Granted Jun 26, 2012·13 cites·15 claims
- 1987US9219227B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Dec 22, 2015·6 cites·20 claims
- 2087US2023413685A1Method of manufacturing a magnetoresistive random access memory (mram)GODO KAISHA IP BRIDGE 1·Filed 2023·Application pending·0 cites
- 2186US11968909B2Method of manufacturing a magnetoresistive random access memory (MRAM)GODO KAISHA IP BRIDGE 1·Filed 2023·Granted Apr 23, 2024·0 cites·20 claims
- 2284US8934290B2Magnetoresistance effect device and method of production of the sameCANON ANELVA CORP·Filed 2013·Granted Jan 13, 2015·3 cites·3 claims
- 2384US8013408B2Negative-resistance device with the use of magneto-resistive effectCANON ANELVA CORP·Filed 2009·Granted Sep 6, 2011·11 cites·9 claims
- 2482US8705269B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2011·Granted Apr 22, 2014·6 cites·18 claims
- 2581US8502331B2Magnetoresistive effect element, magnetic memoryKITAGAWA EIJI·Filed 2011·Granted Aug 6, 2013·5 cites·14 claims
- 2680US11737372B2Method of manufacturing a magnetoresistive random access memory (MRAM)GODO KAISHA IP BRIDGE 1·Filed 2021·Granted Aug 22, 2023·0 cites·8 claims
- 2779US6958940B2Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory arrayHITACHI ULSI SYS CO LTD·Filed 2002·Granted Oct 25, 2005·23 cites·18 claims
- 2876US8521795B2Random number generating deviceFUKUSHIMA AKIO·Filed 2008·Granted Aug 27, 2013·8 cites·12 claims
- 2975US7095657B2Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory arrayHITACHI ULSI SYSTEMS CO INC·Filed 2005·Granted Aug 22, 2006·10 cites·7 claims
- 3072US8394649B2Method of production of a magnetoresistance effect deviceDJAYAPRAWIRA DAVID D·Filed 2008·Granted Mar 12, 2013·6 cites·4 claims
- 3165US10319902B2Magnetoresistive deviceAIST·Filed 2018·Granted Jun 11, 2019·1 cites·8 claims
- 3254US10431303B2Resistance change type memory including write control circuit to control write to variable resistance elementAIST·Filed 2017·Granted Oct 1, 2019·1 cites·18 claims
- 3351US9230628B2Magnetic memoryTOSHIBA KK·Filed 2014·Granted Jan 5, 2016·0 cites·22 claims
- 3451US2015280111A1Magnetic multilayer film and tunneling magnetoresistance elementNAT INST OF ADVANCED IND SCIEN·Filed 2013·Application pending·0 cites
- 3550US8750666B2Optical device using a plasmonic waveguide, and optical isolatorNAT INST OF ADVANCED IND SCIEN·Filed 2013·Granted Jun 10, 2014·0 cites·20 claims
- 3649US10998490B2Magnetic elementAIST·Filed 2018·Granted May 4, 2021·0 cites·15 claims
- 3749US9437810B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Sep 6, 2016·0 cites·14 claims
- 3848US2024298548A1Magnetoresistive element, magnetic sensor, and magnetic memorySONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2022·Application pending·0 cites
- 3948US2010181632A1Magnetic tunnel junction device and memory device including the sameNAT INST OF ADVANCED IND SCIEN·Filed 2010·Application pending·0 cites
- 4048US2013288397A1Magnetoresistive effect element, magnetic memory, and method of manufacturing magentoresistive effect elementTOSHIBA KK·Filed 2013·Application pending·0 cites
- 4147US8378437B2Magnetoresistive effect element and magnetic random access memoryTOSHIBA KK·Filed 2008·Granted Feb 19, 2013·0 cites·12 claims
- 4247US2008026253A1Cpp type giant magneto-resistance element and magnetic sensorNAT INST OF ADVANCED IND SCIEN·Filed 2007·Application pending·0 cites
- 4345US11133459B2Magnetic element, magnetic memory device, and magnetic sensorAIST·Filed 2018·Granted Sep 28, 2021·0 cites·13 claims
- 4445US2024395283A1Magnetic storage device provided with magnetoresistive elementAIST·Filed 2022·Application pending·0 cites
- 4544US2011094875A1Magnetoresistance effect device and method of production of the sameCANON ANELVA CORP·Filed 2011·Application pending·0 cites
- 4644US2009322419A1Amplifying apparatus using magneto-resistive deviceCANON ANELVA CORP·Filed 2009·Application pending·0 cites
- 4743US2008180862A1Method of production of a magnetoresistance effect deviceANELVA CORP·Filed 2008·Application pending·0 cites
- 4842US9620189B2Magnetic memoryTOSHIBA KK·Filed 2015·Granted Apr 11, 2017·0 cites·19 claims
- 4942US2008055793A1Magnetoresistance effect deviceANELVA CORP·Filed 2007·Application pending·0 cites
- 5040US2006056115A1Magnetoresistance effect device and method of production of the sameNAT INST OF ADVANCED IND SCIEN·Filed 2005·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →