US2008180862A1PendingUtilityA1
Method of production of a magnetoresistance effect device
Est. expirySep 7, 2024(expired)· nominal 20-yr term from priority
Inventors:David Djulianto DjayaprawiraKoji TsunekawaMotonobu NagaiHiroki MaeharaShinji YamagataNaoki WatanabeShinji Yuasa
G11C 11/161H01F 41/307H01F 10/3254G11C 11/15B82Y 25/00G11C 11/16C23C 14/081H01F 41/18H01F 10/3204C23C 14/34B82Y 40/00H10N 50/10H10N 50/01
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Abstract
A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.
Claims
exact text as granted — not AI-modified1 . A method of production of a magnetoresistance effect device including a multilayer structure comprised of a pair of ferromagnetic layers and a barrier layer positioned between them, comprising:
forming at least one ferromagnetic layer so that at least a part contacting the barrier layer is amorphous and forming said barrier layer having a highly-oriented fiber-texture structure by using a sputtering method.
2 . A method of production of a magnetoresistance effect device as set forth in claim 1 , further comprising forming said MgO layer by a sputtering method using an MgO target.Cited by (0)
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