US2023413685A1PendingUtilityA1

Method of manufacturing a magnetoresistive random access memory (mram)

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Assignee: GODO KAISHA IP BRIDGE 1Priority: Mar 12, 2004Filed: Aug 10, 2023Published: Dec 21, 2023
Est. expiryMar 12, 2024(expired)· nominal 20-yr term from priority
Inventors:Shinji Yuasa
H10D 1/682H10N 50/85H01F 10/3254G11C 11/16H10N 50/01H10N 50/10H10D 84/80H10B 61/22H10N 50/80G11C 11/161B82Y 25/00H10B 53/30H01L 28/55H10B 61/00H01F 10/132G11C 11/15H10N 59/00B82Y 10/00
87
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Claims

Abstract

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

Claims

exact text as granted — not AI-modified
1 - 2 . (canceled) 
     
     
         3 . A magnetoresistive device comprising a magnetic tunnel junction structure comprising:
 a first ferromagnetic material layer;   a second ferromagnetic material layer; and   a tunnel barrier layer between the first ferromagnetic material layer and the second ferromagnetic material layer,   wherein said tunnel barrier layer comprises crystalline MgO x  (001) with oxygen vacancy defects and (0<x<1).   
     
     
         4 . The magnetoresistive device of  claim 3 , wherein 0.9<x<1. 
     
     
         5 . The magnetoresistive device of  claim 4 , wherein 0.98<x<1. 
     
     
         6 . The magnetoresistive device of  claim 5 , wherein 0.99<x<1. 
     
     
         7 . The magnetoresistive device of  claim 3 , wherein a barrier height of the tunnel barrier layer is in a range of 0.1 eV to 0.85 eV. 
     
     
         8 . The magnetoresistive device of  claim 7 , wherein the barrier height of the tunnel barrier layer is in a range of 0.2 eV to 0.5 eV. 
     
     
         9 . The magnetoresistive device of  claim 3 , wherein the first ferromagnetic material layer and/or the second ferromagnetic material layer comprises Boron. 
     
     
         10 . The magnetoresistive device of  claim 3 , wherein the first ferromagnetic material layer and/or the second ferromagnetic material layer is partially or entirely crystallized. 
     
     
         11 . A magnetoresistive device comprising a magnetic tunnel junction structure comprising:
 a first ferromagnetic material layer;   a second ferromagnetic material layer; and   a tunnel barrier layer between the first ferromagnetic material layer and the second ferromagnetic material layer,   wherein said tunnel barrier layer comprises magnesium oxide and has a barrier height in a range of 0.1 eV to 0.85 eV.   
     
     
         12 . The magnetoresistive device of  claim 11 , wherein the tunnel barrier layer comprises partially or fully crystalline magnesium oxide. 
     
     
         13 . The magnetoresistive device of  claim 12 , wherein the first ferromagnetic material layer and/or the second ferromagnetic material layer is partially or entirely crystallized. 
     
     
         14 . The magnetoresistive device of  claim 13 , wherein the barrier height is in a range of 0.2 eV to 0.5 eV. 
     
     
         15 . The magnetoresistive device of  claim 13 , wherein the first ferromagnetic material layer and/or the second ferromagnetic material layer exhibits a body-centered cubic (BCC) structure. 
     
     
         16 . The magnetoresistive device of  claim 13 , wherein the first ferromagnetic material layer and/or the second ferromagnetic material layer comprises Cobalt and Iron. 
     
     
         17 . A magnetoresistive device comprising:
 a first ferromagnetic material layer;   a tunnel barrier layer disposed on the first ferromagnetic material layer, wherein said tunnel barrier layer comprises magnesium oxide and has a barrier height in a range of 0.2 eV to 0.5 eV; and   a second ferromagnetic material layer disposed on the tunnel barrier layer.   
     
     
         18 . The magnetoresistive device of  claim 17 , wherein the tunnel barrier layer comprises partially or fully crystalline magnesium oxide. 
     
     
         19 . The magnetoresistive device of  claim 18 , wherein the first ferromagnetic material layer and/or the second ferromagnetic material layer is partially or entirely crystallized. 
     
     
         20 . The magnetoresistive device of  claim 19 , wherein the first ferromagnetic material layer and/or the second ferromagnetic material layer exhibits a body-centered cubic (BCC) structure. 
     
     
         21 . The magnetoresistive device of  claim 19 , wherein the first ferromagnetic material layer and/or the second ferromagnetic material layer comprises Cobalt and Iron. 
     
     
         22 . The magnetoresistive device of  claim 17 , wherein the tunnel barrier layer has a thickness less than 10 nm.

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