Inventor · disambiguated record
Toshihiko Nagase
Also filed as: NAGASE TOSHIHIKO
121 granted patents·33 pending applications·1,696 citations·filing 1998–2024
99Inventor score
Top patents by PatentIndex Score
154 records- 0198US8036025B2Magnetoresistive elementTOSHIBA KK·Filed 2010·Granted Oct 11, 2011·33 cites·36 claims
- 0298US7768824B2Magnetoresistive element and magnetoresistive random access memory including the sameTOSHIBA KK·Filed 2008·Granted Aug 3, 2010·58 cites·18 claims
- 0398US7663197B2Magnetoresistive elementTOSHIBA KK·Filed 2006·Granted Feb 16, 2010·97 cites·21 claims
- 0498US7596015B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2007·Granted Sep 29, 2009·94 cites·23 claims
- 0597US10873021B2Magnetic device and manufacturing method of magnetic deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Dec 22, 2020·12 cites·13 claims
- 0697US10468170B2Magnetic deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Nov 5, 2019·12 cites·18 claims
- 0797US8009465B2Magnetoresistive elementTOSHIBA KK·Filed 2009·Granted Aug 30, 2011·55 cites·17 claims
- 0897US6830824B2Magnetic recording medium with multiple magnetic layers capable of being exchange coupled at elevated temperatures and magnetic recording apparatusTOSHIBA KK·Filed 2001·Granted Dec 14, 2004·105 cites·32 claims
- 0996US9741928B2Magnetoresistive element and magnetic random access memoryTOSHIBA KK·Filed 2016·Granted Aug 22, 2017·12 cites·13 claims
- 1096US8363462B2Magnetoresistive elementTOSHIBA KK·Filed 2011·Granted Jan 29, 2013·21 cites·23 claims
- 1196US7924607B2Magnetoresistance effect element and magnetoresistive random access memory using the sameTOSHIBA KK·Filed 2008·Granted Apr 12, 2011·38 cites·23 claims
- 1296US6795380B2Optically-assisted magnetic recording head and optically-assisted magnetic recording apparatusTOSHIBA KK·Filed 2002·Granted Sep 21, 2004·62 cites·13 claims
- 1395US10263178B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Apr 16, 2019·15 cites·18 claims
- 1495US10170519B2Magnetoresistive element and memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Jan 1, 2019·12 cites·17 claims
- 1595US10103318B2Magnetoresistive elementTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 16, 2018·14 cites·13 claims
- 1695US9947862B2Magnetoresistive memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Apr 17, 2018·16 cites·21 claims
- 1795US9705076B2Magnetoresistive element and manufacturing method of the sameNAGAMINE MAKOTO·Filed 2014·Granted Jul 11, 2017·14 cites·17 claims
- 1895US9620561B2Magnetoresistive element and manufacturing method thereofNAGASE TOSHIHIKO·Filed 2015·Granted Apr 11, 2017·14 cites·17 claims
- 1995US9293695B2Magnetoresistive element and magnetic random access memoryUEDA KOJI·Filed 2014·Granted Mar 22, 2016·13 cites·17 claims
- 2095US9252357B2Magnetoresistive elementTOSHIBA KK·Filed 2015·Granted Feb 2, 2016·13 cites·18 claims
- 2195US7957184B2Magnetoresistive element and magnetoresistive random access memory including the sameTOSHIBA KK·Filed 2010·Granted Jun 7, 2011·17 cites·33 claims
- 2294US10510950B2Magnetoresistive memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Dec 17, 2019·12 cites·7 claims
- 2394US10388343B2Magnetoresistive element and magnetic memoryTOSHIBA MEMORY CORP·Filed 2018·Granted Aug 20, 2019·18 cites·13 claims
- 2494US10026891B2Magnetoresistive elementTOSHIBA MEMORY CORP·Filed 2016·Granted Jul 17, 2018·9 cites·17 claims
- 2594US9184374B2Magnetoresistive elementSAWADA KAZUYA·Filed 2013·Granted Nov 10, 2015·15 cites·18 claims
- 2694US8995181B2Magnetoresistive elementWATANABE DAISUKE·Filed 2013·Granted Mar 31, 2015·14 cites·20 claims
- 2794US8305801B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2011·Granted Nov 6, 2012·17 cites·18 claims
- 2894US8299552B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2008·Granted Oct 30, 2012·33 cites·18 claims
- 2994US7355884B2Magnetoresistive elementTOSHIBA KK·Filed 2005·Granted Apr 8, 2008·28 cites·18 claims
- 3094US6554972B1Information recording medium and its manufacturing methodTOSHIBA KK·Filed 1999·Granted Apr 29, 2003·67 cites·4 claims
- 3193US10707269B2Semiconductor storage deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Jul 7, 2020·5 cites·19 claims
- 3293US10090459B2Magnetoresistive elementTOSHIBA MEMORY CORP·Filed 2017·Granted Oct 2, 2018·8 cites·20 claims
- 3393US9991313B2Magnetic memory and manufacturing method of the sameTOSHIBA MEMORY CORP·Filed 2015·Granted Jun 5, 2018·10 cites·16 claims
- 3493US9640584B2Method of manufacturing a magnetoresistive memory deviceNAGAMINE MAKOTO·Filed 2015·Granted May 2, 2017·10 cites·11 claims
- 3593US9461240B2Magnetoresistive memory deviceSAWADA KAZUYA·Filed 2015·Granted Oct 4, 2016·14 cites·18 claims
- 3693US9269890B2Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layerNAKAYAMA MASAHIKO·Filed 2013·Granted Feb 23, 2016·11 cites·5 claims
- 3793US8750029B2Magnetoresistive effect element and magnetic memoryKITAGAWA EIJI·Filed 2011·Granted Jun 10, 2014·14 cites·20 claims
- 3893US8139405B2Magnetoresistive element and magnetoresistive random access memory including the sameYOSHIKAWA MASATOSHI·Filed 2011·Granted Mar 20, 2012·13 cites·15 claims
- 3993US8107281B2Magnetoresistive element and magnetic memoryKAI TADASHI·Filed 2010·Granted Jan 31, 2012·23 cites·12 claims
- 4093US8098514B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2008·Granted Jan 17, 2012·49 cites·24 claims
- 4192US9130143B2Magnetic memory and method for manufacturing the sameNAGASE TOSHIHIKO·Filed 2014·Granted Sep 8, 2015·9 cites·14 claims
- 4292US8218355B2Magnetoresistive element and magnetic memoryKITAGAWA EIJI·Filed 2009·Granted Jul 10, 2012·23 cites·25 claims
- 4392US7920361B2Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and ScTOSHIBA KK·Filed 2007·Granted Apr 5, 2011·23 cites·26 claims
- 4491US11600773B2Selector and non-volatile storage deviceKIOXIA CORP·Filed 2021·Granted Mar 7, 2023·2 cites·18 claims
- 4591US11201189B2Semiconductor device having rare earth oxide layer and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2018·Granted Dec 14, 2021·4 cites·9 claims
- 4691US8670268B2Magnetoresistive element and magnetic memory using the sameNAGASE TOSHIHIKO·Filed 2012·Granted Mar 11, 2014·9 cites·18 claims
- 4791US8154915B2Magnetoresistive element and magnetoresistive random access memory including the sameYOSHIKAWA MASATOSHI·Filed 2011·Granted Apr 10, 2012·11 cites·54 claims
- 4890US10199568B2Magnetic storage device and manufacturing method of magnetic storage deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Feb 5, 2019·7 cites·3 claims
- 4990US7455951B2Information recording medium and its manufacturing methodTOSHIBA KK·Filed 2006·Granted Nov 25, 2008·8 cites·2 claims
- 5089US8659103B2Magnetoresistive element and magnetic memory using the sameWATANABE DAISUKE·Filed 2012·Granted Feb 25, 2014·10 cites·18 claims
Showing the top 50 of 154 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →