Inventor · disambiguated record
Taro Nishiguchi
Also filed as: NISHIGUCHI TARO
36 granted patents·49 pending applications·117 citations·filing 2010–2022
96Inventor score
Top patents by PatentIndex Score
85 records- 0197US11530491B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Granted Dec 20, 2022·3 cites·16 claims
- 0290US8435866B2Method for manufacturing silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Granted May 7, 2013·11 cites·14 claims
- 0385US10490634B2Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Nov 26, 2019·3 cites·8 claims
- 0485US9057147B2Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 16, 2015·2 cites·6 claims
- 0582US8642153B2Single crystal silicon carbide substrate and method of manufacturing the sameHORI TSUTOMU·Filed 2012·Granted Feb 4, 2014·2 cites·5 claims
- 0680US9728628B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Aug 8, 2017·3 cites·8 claims
- 0780USD651992SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Jan 10, 2012·26 cites·1 claims
- 0879US10396163B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Aug 27, 2019·3 cites·22 claims
- 0979USD651991SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Jan 10, 2012·25 cites·1 claims
- 1078US9255344B2Silicon carbide substrate and method of manufacturing the sameHARADA SHIN·Filed 2012·Granted Feb 9, 2016·3 cites·13 claims
- 1177US10612160B2Epitaxial wafer and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Apr 7, 2020·2 cites·5 claims
- 1276US11984480B2Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted May 14, 2024·1 cites·10 claims
- 1376US10770550B2Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Sep 8, 2020·1 cites·9 claims
- 1475US9966249B2Silicon carbide semiconductor substrate and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted May 8, 2018·3 cites·18 claims
- 1575US9957641B2Epitaxial wafer and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted May 1, 2018·2 cites·5 claims
- 1675US8168515B2Method for manufacturing semiconductor substrateSASAKI MAKOTO·Filed 2010·Granted May 1, 2012·3 cites·17 claims
- 1774USD655256SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Mar 6, 2012·20 cites·1 claims
- 1870US11053607B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jul 6, 2021·1 cites·13 claims
- 1969US11004941B2Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted May 11, 2021·0 cites·12 claims
- 2068US10734222B2Semiconductor stackSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Aug 4, 2020·0 cites·12 claims
- 2167US10229836B2Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Mar 12, 2019·1 cites·6 claims
- 2265US9947782B2Semiconductor device and method for manufacturing sameHARADA SHIN·Filed 2010·Granted Apr 17, 2018·1 cites·11 claims
- 2364US10580647B2Semiconductor stackSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Mar 3, 2020·0 cites·7 claims
- 2464US2013095285A1Silicon carbide substrate, silicon carbide ingot, and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 2562US2016273129A1Silicon carbide substrate, silicon carbide ingot, and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Application pending·0 cites
- 2658US10741683B2Semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Aug 11, 2020·0 cites·12 claims
- 2757US10395924B2Semiconductor stackSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Aug 27, 2019·0 cites·8 claims
- 2857US9450054B2Dislocation in SiC semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 20, 2016·0 cites·14 claims
- 2957US8642154B2Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingotHORI TSUTOMU·Filed 2012·Granted Feb 4, 2014·1 cites·6 claims
- 3056US9583571B2Dislocation in SiC semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Feb 28, 2017·0 cites·14 claims
- 3156US2015233018A1Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 3254US12428752B2Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Granted Sep 30, 2025·0 cites·6 claims
- 3354US9090992B2Method of manufacturing single crystalNISHIGUCHI TARO·Filed 2010·Granted Jul 28, 2015·0 cites·22 claims
- 3454US8912550B2Dislocations in SiC semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Dec 16, 2014·0 cites·14 claims
- 3554US2024332364A1Silicon carbide epitaxial substrate, method of manufacturing silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 3653US9631296B2Method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 25, 2017·0 cites·5 claims
- 3752US2013161647A1Ingot, substrate, and substrate groupSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 3850US11242618B2Silicon carbide substrate and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Feb 8, 2022·0 cites·20 claims
- 3950US2012294790A1Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingotSASAKI MAKOTO·Filed 2012·Application pending·0 cites
- 4049US2013061801A1Method for manufacturing silicon carbide crystalFUJIWARA SHINSUKE·Filed 2012·Application pending·0 cites
- 4148US2017152609A1Method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 4248US2023059737A1Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 4348US2023369411A1Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 4447US2011226182A1Crucible, crystal production device, and holderSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 4546US2012012862A1Method for manufacturing silicon carbide substrate, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 4646US2011217224A1Silicon carbide crystal, method of manufacturing the same, apparatus for manufacturing the same, and crucibleSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 4746US2011229719A1Manufacturing method for crystal, manufacturing apparatus for crystal, and stacked filmSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 4846US2012025208A1Method for manufacturing silicon carbide substrate and silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 4946US2023272550A1Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 5045US8629457B2Light-emitting deviceNISHIGUCHI TARO·Filed 2011·Granted Jan 14, 2014·0 cites·9 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →