Inventor · disambiguated record
Tatsuo Nishita
Also filed as: NISHITA TATSUO
16 granted patents·6 pending applications·161 citations·filing 2002–2022
91Inventor score
Top patents by PatentIndex Score
22 records- 0196US8366953B2Plasma cleaning method and plasma CVD methodTOKYO ELECTRON LTD·Filed 2007·Granted Feb 5, 2013·88 cites·14 claims
- 0286US7674722B2Method of forming gate insulating film, semiconductor device and computer recording mediumTOKYO ELECTRON LTD·Filed 2005·Granted Mar 9, 2010·11 cites·7 claims
- 0383US8258571B2MOS semiconductor memory device having charge storage region formed from stack of insulating filmsENDOH TETSUO·Filed 2008·Granted Sep 4, 2012·11 cites·19 claims
- 0480US6844273B2Precleaning method of precleaning a silicon nitride film forming systemTOKYO ELECTRON LTD·Filed 2002·Granted Jan 18, 2005·20 cites·6 claims
- 0578US11676847B2Substrate placing table and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2022·Granted Jun 13, 2023·0 cites·16 claims
- 0678US7156923B2Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning methodTOKYO ELECTRON LTD·Filed 2004·Granted Jan 2, 2007·19 cites·6 claims
- 0774US11508603B2Substrate placing table and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2021·Granted Nov 22, 2022·0 cites·17 claims
- 0865US11217470B2Substrate placing table and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2019·Granted Jan 4, 2022·0 cites·10 claims
- 0963US8119545B2Forming a silicon nitride film by plasma CVDHONDA MINORU·Filed 2009·Granted Feb 21, 2012·2 cites·7 claims
- 1063US7915177B2Method of forming gate insulation film, semiconductor device, and computer recording mediumTOYKO ELECTRON LTD·Filed 2010·Granted Mar 29, 2011·1 cites·8 claims
- 1161US8138103B2Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor deviceKOHNO MASAYUKI·Filed 2007·Granted Mar 20, 2012·1 cites·14 claims
- 1261US7304002B2Method of oxidizing member to be treatedTOKYO ELECTRON LTD·Filed 2003·Granted Dec 4, 2007·8 cites·4 claims
- 1355US8569186B2Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2012·Granted Oct 29, 2013·0 cites·4 claims
- 1451US8329596B2Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor deviceKOHNO MASAYUKI·Filed 2012·Granted Dec 11, 2012·0 cites·13 claims
- 1547US2011189862A1Silicon oxynitride film and process for production thereof, computer-readable storage medium, and plasma cvd deviceTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 1646US2010140683A1Silicon nitride film and nonvolatile semiconductor memory deviceTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 1745US8318614B2Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatusKOHNO MASAYUKI·Filed 2008·Granted Nov 27, 2012·0 cites·14 claims
- 1843US8114790B2Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatusKOHNO MASAYUKI·Filed 2007·Granted Feb 14, 2012·0 cites·13 claims
- 1943US2009029564A1Plasma treatment apparatus and plasma treatment methodTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 2041US2005205013A1Plasma processing apparatus and plasma processing methodTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 2138US2009239364A1Method for forming insulating film and method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 2236US2012184107A1Semiconductor device manufacturing methodSATO YOSHIHIRO·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →