Inventor · disambiguated record
Takao Takenaka
Also filed as: TAKENAKA TAKAO
21 granted patents·245 citations·filing 1988–2008
95Inventor score
Top patents by PatentIndex Score
21 records- 0174US5442203ASemiconductor light emitting device having AlGaAsP light reflecting layersSHINETSU HANDOTAI KK·Filed 1994·Granted Aug 15, 1995·36 cites·7 claims
- 0265US5362683AMethod of making epitaxial wafersSHINETSU HANDOTAI KK·Filed 1994·Granted Nov 8, 1994·36 cites·8 claims
- 0362US5323027ALight emitting device with double heterostructureSHINETSU HANDOTAI KK·Filed 1992·Granted Jun 21, 1994·22 cites·66 claims
- 0455US5739553AAlgainp light-emitting deviceSHINETSU HANDOTAI KK·Filed 1995·Granted Apr 14, 1998·21 cites·16 claims
- 0554US5600158ASemiconductor light emitting device with current spreading layerSHINETSU HANDOTAI KK·Filed 1995·Granted Feb 4, 1997·19 cites·8 claims
- 0653US8728870B2Thin film silicon wafer and method for manufacturing the sameTOBE SATOSHI·Filed 2008·Granted May 20, 2014·1 cites·4 claims
- 0751US5386118AMethod and apparatus for determination of interstitial oxygen concentration in silicon single crystalSHINETSU HANDOTAI KK·Filed 1993·Granted Jan 31, 1995·10 cites·5 claims
- 0847US5444269AAlGaInP light emitting deviceSHINETSU HANDOTAI KK·Filed 1994·Granted Aug 22, 1995·11 cites·4 claims
- 0947US5442201ASemiconductor light emitting device with nitrogen dopingSHINETSU HANDOTAI KK·Filed 1994·Granted Aug 15, 1995·9 cites·8 claims
- 1044US5612539AMethod of evaluating lifetime related quality of semiconductor surfaceSHINETSU HANDOTAI KK·Filed 1995·Granted Mar 18, 1997·11 cites·16 claims
- 1143US5209811AMethod for heat-treating gallium arsenide monocrystalsSHINETSU HANDOTAI KK·Filed 1991·Granted May 11, 1993·7 cites·1 claims
- 1242US5254172ARotating furnace tube having a non-rotating slidable work holder for processing semiconductor substratesSHINETSU HANDOTAI KK·Filed 1992·Granted Oct 19, 1993·13 cites·8 claims
- 1341US5302832AMethod for evaluation of spatial distribution of deep level concentration in semiconductor crystalSHINETSU HANDOTAI KK·Filed 1992·Granted Apr 12, 1994·9 cites·1 claims
- 1437US4905058ALight-emitting semiconductor deviceSHINETSU HANDOTAI KK·Filed 1988·Granted Feb 27, 1990·6 cites·1 claims
- 1536US5598452AMethod of evaluating a silicon single crystalSHINETSU HANDOTAI KK·Filed 1995·Granted Jan 28, 1997·7 cites·8 claims
- 1636US5533387AMethod of evaluating silicon wafersSHINETSU HANDOTAI KK·Filed 1995·Granted Jul 9, 1996·6 cites·3 claims
- 1736US5401684AMethod of manufacturing a light-emitting semiconductor device substrateSHIN ETSU HANDATAI CO LTD·Filed 1992·Granted Mar 28, 1995·7 cites·2 claims
- 1836US5366552AApparatus for liquid-phase epitaxial growthSHINETSU HANDOTAI KK·Filed 1992·Granted Nov 22, 1994·4 cites·7 claims
- 1933US5228927AMethod for heat-treating gallium arsenide monocrystalsSHINETSU HANDOTAI KK·Filed 1991·Granted Jul 20, 1993·5 cites·1 claims
- 2031US5597761ASemiconductor light emitting device and methods of manufacturing itSHINETSU HANDOTAI KK·Filed 1995·Granted Jan 28, 1997·2 cites·4 claims
- 2131US5585305AMethod for fabricating a semiconductor deviceSHINETSU HANDOTAI KK·Filed 1994·Granted Dec 17, 1996·3 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →