Inventor · disambiguated record
Takeshi Tawara
Also filed as: TAWARA TAKESHI
24 granted patents·9 pending applications·27 citations·filing 2006–2024
92Inventor score
Files withFUJI ELECTRIC CO LTD23KAWADA YASUYUKI5FUJI ELEC DEVICE TECH CO LTD2FUJI ELECTRIC HOLDINGS2YONEZAWA YOSHIYUKI1
Top patents by PatentIndex Score
33 records- 0186US10665681B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted May 26, 2020·4 cites·17 claims
- 0282US10796906B2Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device, and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Oct 6, 2020·1 cites·9 claims
- 0379US7682991B2Method of manufacturing silicon carbide semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2007·Granted Mar 23, 2010·8 cites·4 claims
- 0477US10453924B2Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Oct 22, 2019·2 cites·4 claims
- 0571US10032724B2Silicon carbide semiconductor base, method of crystal axis alignment in silicon carbide semiconductor base, and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jul 24, 2018·1 cites·11 claims
- 0671US8114783B2Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide deviceKAWADA YASUYUKI·Filed 2008·Granted Feb 14, 2012·4 cites·8 claims
- 0769US10354867B2Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jul 16, 2019·1 cites·18 claims
- 0868US8232184B2Method for manufacturing silicon carbide semiconductor device and the silicon carbide semiconductor deviceKAWADA YASUYUKI·Filed 2009·Granted Jul 31, 2012·2 cites·12 claims
- 0967US9117681B2Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide deviceKAWADA YASUYUKI·Filed 2012·Granted Aug 25, 2015·2 cites·4 claims
- 1065US10418445B2Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Sep 17, 2019·1 cites·8 claims
- 1162US8124510B2Method of manufacturing a silicon carbide semiconductor deviceKAWADA YASUYUKI·Filed 2010·Granted Feb 28, 2012·1 cites·3 claims
- 1262US2024355885A1Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1360US2024363692A1Silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1457US2024347587A1Superjunction silicon carbide semiconductor device and method of manufacturing superjunction silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1557US2024038851A1Silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 1656US2024204051A1Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, silicon carbide semiconductor device, and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 1755US2023100453A1Silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Application pending·0 cites
- 1854US11201218B2Silicon carbide epitaxial substrate, method of manufacturing thereof, silicon carbide semiconductor device, and method of manufacturing thereofFUJI ELECTRIC CO LTD·Filed 2020·Granted Dec 14, 2021·0 cites·9 claims
- 1953US10629432B2Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device, and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Apr 21, 2020·0 cites·2 claims
- 2052US8648353B2Method for manufacturing silicon carbide semiconductor device and the silicon carbide semiconductor deviceKAWADA YASUYUKI·Filed 2012·Granted Feb 11, 2014·0 cites·5 claims
- 2149US12170312B2Super junction silicon carbide semiconductor device and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2022·Granted Dec 17, 2024·0 cites·3 claims
- 2249US11948976B2Vertical MOSFET having trench gate structure containing silicon carbideFUJI ELECTRIC CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·7 claims
- 2348US10748763B2Silicon carbide semiconductor substrate, method of manufacturing a silicon carbide semiconductor device, and silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Aug 18, 2020·0 cites·17 claims
- 2447US12249625B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
- 2546US10522667B2Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transistor, and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·11 claims
- 2646US2008318359A1Method of manufacturing silicon carbide semiconductor substrateFUJI ELEC DEVICE TECH CO LTD·Filed 2008·Application pending·0 cites
- 2743US10868122B2Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·4 claims
- 2841US2007015333A1Method for manufacturing silicon carbide semiconductor devicesFUJI ELECTRIC HOLDINGS·Filed 2006·Application pending·0 cites
- 2939US8324631B2Silicon carbide semiconductor device and method for manufacturing the sameYONEZAWA YOSHIYUKI·Filed 2007·Granted Dec 4, 2012·0 cites·8 claims
- 3039US2006252243A1Epitaxial film deposition system and epitaxial film formation methodFUJI ELECTRIC HOLDINGS·Filed 2006·Application pending·0 cites
- 3138US10418477B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Sep 17, 2019·0 cites·8 claims
- 3237US10573716B2Method of manufacturing a silicon carbide semiconductor device including depositing a second silicon carbide semiconductor on an etched silicon carbide base regionFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 25, 2020·0 cites·2 claims
- 3335US11296192B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Apr 5, 2022·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →