Inventor · disambiguated record
Tatsunori Toyota
Also filed as: TOYOTA TATSUNORI
11 granted patents·3 pending applications·7 citations·filing 2009–2016
81Inventor score
Files withDOWA ELECTRONICS MATERIALS CO LTD5KADOWAKI YOSHITAKA2TOBA RYUICHI2TOYOTA TATSUNORI2CHO MEOUNG WHAN1
Top patents by PatentIndex Score
14 records- 0177US8765584B2Semiconductor device and manufacturing method thereforKADOWAKI YOSHITAKA·Filed 2011·Granted Jul 1, 2014·5 cites·16 claims
- 0262US8860294B2Light emitting element and method for manufacturing the sameTOYOTA TATSUNORI·Filed 2010·Granted Oct 14, 2014·1 cites·4 claims
- 0359US8962362B2Vertically structured group III nitride semiconductor LED chip and method for manufacturing the sameCHO MEOUNG WHAN·Filed 2009·Granted Feb 24, 2015·1 cites·5 claims
- 0455US9012935B2Vertically structured group III nitride semiconductor LED chip and method for manufacturing the sameWAVESQUARE INC·Filed 2013·Granted Apr 21, 2015·0 cites·4 claims
- 0552US10475964B2Method of producing n-type ohmic electrode and n-type ohmic electrode, n-type electrode, and III nitride semiconductor light-emitting deviceDOWA ELECTRONICS MATERIALS CO LTD·Filed 2016·Granted Nov 12, 2019·0 cites·6 claims
- 0651US9318653B2Luminescent device and manufacturing method for luminescent device and semiconductor deviceDOWA ELECTRONICS MATERIALS CO LTD·Filed 2015·Granted Apr 19, 2016·0 cites·6 claims
- 0748US9287366B2III nitride semiconductor device and method of producing the sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2012·Granted Mar 15, 2016·0 cites·15 claims
- 0848US2013137246A1Method of producing group iii nitride semiconductor growth substrateDOWA HOLDINGS CO LTD·Filed 2013·Application pending·0 cites
- 0947US9082893B2Luminescent device and manufacturing method for luminescent device and semiconductor deviceKADOWAKI YOSHITAKA·Filed 2012·Granted Jul 14, 2015·0 cites·2 claims
- 1047US8736025B2III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinityTOBA RYUICHI·Filed 2009·Granted May 27, 2014·0 cites·8 claims
- 1146US2015228845A1Iii nitride semiconductor light emitting device and method for manufacturing the sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2013·Application pending·0 cites
- 1244US2014327034A1Semiconductor light emitting device and method of manufacturing the sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2012·Application pending·0 cites
- 1343US8878189B2Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the sameTOBA RYUICHI·Filed 2010·Granted Nov 4, 2014·0 cites·8 claims
- 1440US9263642B2III nitride semiconductor light emitting device and method for manufacturing the sameTOYOTA TATSUNORI·Filed 2011·Granted Feb 16, 2016·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →