Inventor · disambiguated record

Tai-I Yang

Also filed as: YANG TAI-I

87 granted patents·5 pending applications·127 citations·filing 2012–2024

99Inventor score

Technology areasH10W H10P H10D H01L B81C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD80 TAIWAN SEMICONDUCTOR MFG4 VANGUARD INT SEMICONDUCT CORP3 UNIKORN SEMICONDUCTOR CORP2 FON DA TECH CO LTD1

Top patents by PatentIndex Score

92 records

0195US9390965B2Air-gap forming techniques for interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 12, 2016·12 cites·20 claims
0294US11842962B2Interconnect structure with air-gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·1 cites·20 claims
0393US10290580B2Hybrid copper structure for advance interconnect usageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·7 cites·20 claims
0491US11183422B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·2 cites·20 claims
0591US11004740B2Structure and method for interconnection with self-alignmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·6 cites·20 claims
0691US10276498B2Interconnect structure with air-gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·4 cites·20 claims
0791US9716035B2Combination interconnect structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 25, 2017·11 cites·17 claims
0889US11088020B2Structure and formation method of interconnection structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 10, 2021·7 cites·20 claims
0989US10991618B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·4 cites·20 claims
1089US10676351B2Nano-electromechanical system (NEMS) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·3 cites·20 claims
1189US9837354B2Hybrid copper structure for advance interconnect usageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 5, 2017·7 cites·20 claims
1288US10177242B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 8, 2019·3 cites·20 claims
1388US9559134B2Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 31, 2017·8 cites·20 claims
1487US10930551B2Methods for fabricating a low-resistance interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·3 cites·20 claims
1586US10340181B2Interconnect structure including air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 2, 2019·4 cites·20 claims
1685US11764106B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
1784US9269609B2Semiconductor isolation structure with air gaps in deep trenchesSHUE HONG-SENG·Filed 2012·Granted Feb 23, 2016·10 cites·20 claims
1883US9698242B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 4, 2017·2 cites·20 claims
1983US9633897B2Air-gap forming techniques for interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 25, 2017·2 cites·20 claims
2082US10818597B2Hybrid copper structure for advance interconnect usageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·2 cites·20 claims
2181US12278143B2Method of providing a workpiece including low resistance interconnect low-resistance interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
2281US12230534B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
2381US10049941B2Semiconductor isolation structure with air gaps in deep trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·3 cites·20 claims
2480US10700005B2Interconnect structure with air gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 30, 2020·1 cites·20 claims
2580US10534273B2Multi-metal fill with self-aligned patterning and dielectric with voidsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·2 cites·20 claims
2680US2024085803A1Multi-metal fill with self-aligned patterning and dielectric with voidsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2779US10714421B2Structure and formation method of semiconductor device with self-aligned conductive featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 14, 2020·2 cites·20 claims
2879US10026647B2Multi-metal fill with self-align patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 17, 2018·2 cites·20 claims
2978US11860550B2Multi-metal fill with self-aligned patterning and dielectric with voidsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
3078US11435224B2Stringed instrument resonance analysis deviceFON DA TECH CO LTD·Filed 2020·Granted Sep 6, 2022·2 cites·14 claims
3178US10000373B2Nano-electromechanical system (NEMS) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 19, 2018·2 cites·20 claims
3278US2024339406A1Integrated circuit interconnect structures with air gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3377US9875967B2Interconnect structure with air-gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 23, 2018·1 cites·20 claims
3476US12300600B2Semiconductor device with self-aligned conductive featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
3576US12094946B2Gate all around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 17, 2024·0 cites·20 claims
3676US11495539B2Interconnect structure with air-gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 8, 2022·0 cites·20 claims
3776US9735232B2Method for manufacturing a semiconductor structure having a trench with high aspect ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 15, 2017·4 cites·15 claims
3876US9583434B2Metal line structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·2 cites·20 claims
3976US9576896B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 21, 2017·2 cites·20 claims
4075US12051646B2Metal line structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
4175US10325993B2Gate all around device and fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 18, 2019·1 cites·20 claims
4274US12062611B2Integrated circuit interconnect structures with air gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·19 claims
4374US10923424B2Interconnect structure with air-gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 16, 2021·0 cites·20 claims
4473US11769695B2Semiconductor structure including low-resistance interconnect and integrated circuit device having the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·0 cites·20 claims
4573US11239340B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
4672US12002709B2Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
4771US11302792B2Fabrication of gate all around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·20 claims
4871US10818596B2Method for forming semiconductor device structure with graphene layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 27, 2020·1 cites·20 claims
4969US11404367B2Method for forming semiconductor device with self-aligned conductive featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
5069US11107725B2Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·0 cites·19 claims

Showing the top 50 of 92 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →