Inventor · disambiguated record
Takafumi Yao
Also filed as: YAO TAKAFUMI
15 granted patents·2 pending applications·119 citations·filing 2000–2011
91Inventor score
Files withSTANLEY ELECTRIC CO LTD4YAO TAKAFUMI4TOHOKU TECHNO ARCH CO LTD3NGK INSULATORS LTD2CANON KK1
Top patents by PatentIndex Score
17 records- 0187US6664565B1ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystalSTANLEY ELECTRIC CO LTD·Filed 2000·Granted Dec 16, 2003·42 cites·16 claims
- 0283US6896731B1P-type single crystal zinc-oxide having low resistivity and method for preparation thereofJAPAN SCIENCE & TECH CORP·Filed 2000·Granted May 24, 2005·19 cites·8 claims
- 0379US7829207B2Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrateSTANLEY ELECTRIC CO LTD·Filed 2008·Granted Nov 9, 2010·5 cites·6 claims
- 0478US6407405B1p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystalsSTANLEY ELECTRIC CO LTD·Filed 2000·Granted Jun 18, 2002·30 cites·15 claims
- 0575US7482618B2ZnO group epitaxial semiconductor device and its manufactureSTANLEY ELECTRIC CO LTD·Filed 2005·Granted Jan 27, 2009·4 cites·26 claims
- 0674US7829435B2Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based elementTOHOKU TECHNO ARCH CO LTD·Filed 2009·Granted Nov 9, 2010·3 cites·2 claims
- 0773US7438762B2Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrateSTANLEY ELECTRIC CO LTD TOKYO·Filed 2006·Granted Oct 21, 2008·5 cites·8 claims
- 0866US8878345B2Structural body and method for manufacturing semiconductor substrateYAO TAKAFUMI·Filed 2011·Granted Nov 4, 2014·2 cites·6 claims
- 0960US8216869B2Group III nitride semiconductor and a manufacturing method thereofYAO TAKAFUMI·Filed 2008·Granted Jul 10, 2012·1 cites·17 claims
- 1057US7479188B2Process for producing GaN substrateTOHOKU TECHNO ARCH CO LTD·Filed 2004·Granted Jan 20, 2009·5 cites·6 claims
- 1150US2008261378A1Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based ElementTOHOKU TECHNO ARCH CO LTD·Filed 2006·Application pending·0 cites
- 1249US7906409B2Device manufacturing methodCANON KK·Filed 2009·Granted Mar 15, 2011·0 cites·13 claims
- 1349US6664570B1P-type contact electrode device and light-emitting deviceNGK INSULATORS LTD·Filed 2000·Granted Dec 16, 2003·3 cites·4 claims
- 1448US8124504B2Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based elementYAO TAKAFUMI·Filed 2010·Granted Feb 28, 2012·0 cites·12 claims
- 1548US2006170013A1ZnO group epitaxial semiconductor device and its manufactureTAKAFUMI YAO·Filed 2006·Application pending·0 cites
- 1642US8119499B2Semiconductor substrate fabrication by etching of a peeling layerYAO TAKAFUMI·Filed 2006·Granted Feb 21, 2012·0 cites·10 claims
- 1737US6777720B2Semiconductor light-emitting element having first and second epitaxial layer group II-VI semiconductor compounds on a substrateNGK INSULATORS LTD·Filed 2002·Granted Aug 17, 2004·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →