Inventor · disambiguated record
Tadanori Yoshida
Also filed as: YOSHIDA TADANORI
17 granted patents·2 pending applications·169 citations·filing 1999–2011
94Inventor score
Files withHITACHI LTD8HITACHI ULSI SYS CO LTD4RENESAS TECH CORP4HITACHI INT ELECTRIC INC2CHAKIHARA HIRAKU1
Top patents by PatentIndex Score
19 records- 0192US8476138B2Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor deviceCHAKIHARA HIRAKU·Filed 2011·Granted Jul 2, 2013·12 cites·7 claims
- 0288US7972920B2Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor deviceHITACHI ULSI SYS CO LTD·Filed 2010·Granted Jul 5, 2011·7 cites·12 claims
- 0381US7701020B2Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor deviceRENESAS TECH CORP·Filed 2009·Granted Apr 20, 2010·5 cites·7 claims
- 0481US7190031B2Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor deviceHITACHI ULSI SYS CO LTD·Filed 2003·Granted Mar 13, 2007·18 cites·71 claims
- 0578US6770528B2Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrateHITACHI ULSI SYS CO LTD·Filed 2003·Granted Aug 3, 2004·23 cites·9 claims
- 0677US7495289B2Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Feb 24, 2009·4 cites·10 claims
- 0773US7161215B2Semiconductor memory device and method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor deviceHITACHI ULSI SYS CO LTD·Filed 2006·Granted Jan 9, 2007·3 cites·9 claims
- 0872US6403479B1Process for producing semiconductor and apparatus for productionHITACHI LTD·Filed 2000·Granted Jun 11, 2002·17 cites·14 claims
- 0969US6717202B2HSG semiconductor capacitor with migration inhibition layerRENESAS TECH CORP·Filed 2002·Granted Apr 6, 2004·15 cites·25 claims
- 1067US6632721B1Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grainsHITACHI LTD·Filed 2000·Granted Oct 14, 2003·13 cites·20 claims
- 1165US6656838B2Process for producing semiconductor and apparatus for productionHITACHI LTD·Filed 2002·Granted Dec 2, 2003·11 cites·4 claims
- 1258US6524927B1Semiconductor device and method of fabricating the sameHITACHI LTD·Filed 1999·Granted Feb 25, 2003·17 cites·21 claims
- 1354US6870224B2MOS transistor apparatus and method of manufacturing sameHITACHI LTD·Filed 2003·Granted Mar 22, 2005·5 cites·13 claims
- 1449US6444405B1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrateHITACHI LTD·Filed 2000·Granted Sep 3, 2002·3 cites·2 claims
- 1548US6764916B1Manufacturing method for semiconductor deviceHITACHI INT ELECTRIC INC·Filed 1999·Granted Jul 20, 2004·14 cites·14 claims
- 1645US6821871B2Method for manufacturing semiconductor device, substrate treatment method, and semiconductor manufacturing apparatusHITACHI INT ELECTRIC INC·Filed 2001·Granted Nov 23, 2004·1 cites·12 claims
- 1742US6905928B2MOS transistor apparatus and method of manufacturing sameHITACHI LTD·Filed 2002·Granted Jun 14, 2005·1 cites·2 claims
- 1840US2004214428A1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrateRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 1938US2002098678A1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrateHITACHI LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →