Inventor · disambiguated record
Takeshi Yuzawa
Also filed as: YUZAWA TAKESHI
17 granted patents·5 pending applications·80 citations·filing 2003–2018
93Inventor score
Top patents by PatentIndex Score
22 records- 0193US8742601B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2013·Granted Jun 3, 2014·10 cites·4 claims
- 0292US9331039B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2015·Granted May 3, 2016·6 cites·18 claims
- 0391US9515043B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2016·Granted Dec 6, 2016·5 cites·19 claims
- 0491US9093334B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2014·Granted Jul 28, 2015·7 cites·16 claims
- 0591US8952554B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2014·Granted Feb 10, 2015·8 cites·9 claims
- 0687US9842821B2Semiconductor device including semiconductor chip, wiring, conductive material, and contact partSEIKO EPSON CORP·Filed 2016·Granted Dec 12, 2017·3 cites·29 claims
- 0787US8614513B2Semiconductor device including a buffer layer structure for reducing stressYUZAWA TAKESHI·Filed 2007·Granted Dec 24, 2013·11 cites·9 claims
- 0886US7230338B2Semiconductor device that improves electrical connection reliabilitySEIKO EPSON CORP·Filed 2005·Granted Jun 12, 2007·14 cites·7 claims
- 0978US10103120B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2017·Granted Oct 16, 2018·1 cites·9 claims
- 1076US7598612B2Semiconductor device and manufacturing method thereofSEIKO EPSON CORP·Filed 2005·Granted Oct 6, 2009·7 cites·6 claims
- 1167US10658325B2Semiconductor device including a buffer layer structure for reducing stressSEIKO EPSON CORP·Filed 2018·Granted May 19, 2020·0 cites·2 claims
- 1262US7560814B2Semiconductor device that improves electrical connection reliabilitySEIKO EPSON CORP·Filed 2007·Granted Jul 14, 2009·2 cites·12 claims
- 1357US7037758B2Semiconductor device, method of manufacturing the same, circuit board and electronic apparatusSEIKO EPSON CORP·Filed 2003·Granted May 2, 2006·6 cites·57 claims
- 1454US2014361433A1Semiconductor deviceSEIKO EPSON CORP·Filed 2014·Application pending·0 cites
- 1549US8878365B2Semiconductor device having a conductive layer reliably formed under an electrode padYUZAWA TAKESHI·Filed 2011·Granted Nov 4, 2014·0 cites·6 claims
- 1649US2009035929A1Method of manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2007·Application pending·0 cites
- 1748US2007013065A1Semiconductor deviceSEIKO EPSON CORP·Filed 2006·Application pending·0 cites
- 1847US7936064B2Semiconductor deviceSEIKO EPSON CORP·Filed 2006·Granted May 3, 2011·0 cites·9 claims
- 1945US2005272243A1Method of manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2005·Application pending·0 cites
- 2044US8441125B2Semiconductor deviceYUZAWA TAKESHI·Filed 2011·Granted May 14, 2013·0 cites·9 claims
- 2142US2007035022A1Semiconductor device and method of manufacturing the sameSEIKO EPSON CORP·Filed 2006·Application pending·0 cites
- 2240US7176581B2Semiconductor device having conductive bumps, method of manufacturing thereof, circuit board and electronic apparatusSEIKO EPSON CORP·Filed 2005·Granted Feb 13, 2007·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →