Inventor · disambiguated record
Tetsuo Aoyama
Also filed as: AOYAMA TETSUO · ONDA YUZI · OSAKI NAOTO
36 granted patents·3 pending applications·1,441 citations·filing 1975–2009
98Inventor score
Files withMITSUBISHI GAS CHEMICAL CO24SHARP KK3EKC TECHNOLOGY INC2TOKYO ELECTRON LTD2EKC TECHNOLOGY K K1
Top patents by PatentIndex Score
39 records- 0196US5242879AActive carbon materials, process for the preparation thereof and the use thereofMITSUBISHI GAS CHEMICAL CO·Filed 1991·Granted Sep 7, 1993·189 cites·3 claims
- 0295US6372410B1Resist stripping compositionMITSUBISHI GAS CHEMICAL CO·Filed 2000·Granted Apr 16, 2002·107 cites·23 claims
- 0394US5972862ACleaning liquid for semiconductor devicesMITSUBISHI GAS CHEMICAL CO·Filed 1997·Granted Oct 26, 1999·234 cites·33 claims
- 0490US6638694B2Resist stripping agent and process of producing semiconductor devices using the sameMITSUBISHI GAS CHEMICAL CO·Filed 2003·Granted Oct 28, 2003·56 cites·10 claims
- 0590US6440326B1Photoresist removing compositionMITSUBISHI GAS CHEMICAL CO·Filed 2000·Granted Aug 27, 2002·57 cites·13 claims
- 0688US7250391B2Cleaning composition for removing resists and method of manufacturing semiconductor deviceEKC TECHNOLOGY K K·Filed 2003·Granted Jul 31, 2007·56 cites·9 claims
- 0787US7399365B2Aqueous fluoride compositions for cleaning semiconductor devicesEKC TECHNOLOGY INC·Filed 2004·Granted Jul 15, 2008·35 cites·4 claims
- 0887US6514352B2Cleaning method using an oxidizing agent, chelating agent and fluorine compoundTOKYO ELECTRON LTD·Filed 2001·Granted Feb 4, 2003·43 cites·18 claims
- 0986US4776929AProcess for production of quaternary ammonium hydroxidesMITSUBISHI GAS CHEMICAL CO·Filed 1987·Granted Oct 11, 1988·40 cites·33 claims
- 1085US6458517B2Photoresist stripping composition and process for stripping photoresistSHARP KK·Filed 2000·Granted Oct 1, 2002·26 cites·17 claims
- 1185US5962385ACleaning liquid for semiconductor devicesMITSUBISHI GAS CHEMICAL CO·Filed 1998·Granted Oct 5, 1999·74 cites·19 claims
- 1285US5338462AActive carbon materials, process for the preparation thereof and the use thereofMITSUBISHI GAS CHEMICAL CO·Filed 1993·Granted Aug 16, 1994·41 cites·9 claims
- 1384US5630904AStripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agentMITSUBISHI GAS CHEMICAL CO·Filed 1995·Granted May 20, 1997·86 cites·19 claims
- 1480US6265309B1Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the sameMITSUBISHI GAS CHEMICALS CO IN·Filed 1999·Granted Jul 24, 2001·78 cites·24 claims
- 1578US5174816ASurface treating agent for aluminum line pattern substrateMITSUBISHI GAS CHEMICAL CO·Filed 1991·Granted Dec 29, 1992·67 cites·12 claims
- 1677US5175078APositive type photoresist developerMITSUBISHI GAS CHEMICAL CO·Filed 1992·Granted Dec 29, 1992·31 cites·22 claims
- 1774US4521638AProcess for preparation of tertiary olefinsMITSUBISHI GAS CHEMICAL CO·Filed 1984·Granted Jun 4, 1985·24 cites·20 claims
- 1871US4613684AProcess for the preparation of carboxylic acid estersMITSUBISHI GAS CHEMICAL CO·Filed 1984·Granted Sep 23, 1986·10 cites·19 claims
- 1971US4013725AProcess for preparing hydroperoxideMITSUBISHI GAS CHEMICAL CO·Filed 1975·Granted Mar 22, 1977·9 cites·14 claims
- 2070US6686322B1Cleaning agent and cleaning process using the sameSHARP KK·Filed 1999·Granted Feb 3, 2004·39 cites·7 claims
- 2169US5911836AMethod of producing semiconductor device and rinse for cleaning semiconductor deviceMITSUBISHI GAS CHEMICAL CO·Filed 1997·Granted Jun 15, 1999·37 cites·8 claims
- 2268US4094905AProcess for producing dimethyl formamideMITSUBISHI GAS CHEMICAL CO·Filed 1977·Granted Jun 13, 1978·7 cites·12 claims
- 2357US6875288B2Cleaning agent and cleaning methodTOKYO ELECTRON LTD·Filed 2001·Granted Apr 5, 2005·6 cites·18 claims
- 2457US4163863AProcess for preparing a methylphenolMITSUBISHI GAS CHEMICAL CO·Filed 1978·Granted Aug 7, 1979·5 cites·14 claims
- 2554US4224243AProcess for producing dimethyl formamideMITSUBISHI GAS CHEMICAL CO·Filed 1979·Granted Sep 23, 1980·4 cites·15 claims
- 2653US5846695ARemoving agent composition for a photoresist and process for producing a semiconductor integrated circuitMITSUBISHI GAS CHEMICAL CO·Filed 1997·Granted Dec 8, 1998·19 cites·19 claims
- 2753US5393386AMethod for preparing aqueous quaternary ammonium hydroxide solutionMITSUBISHI GAS CHEMICAL CO·Filed 1993·Granted Feb 28, 1995·9 cites·18 claims
- 2853US2009099051A1Aqueous fluoride compositions for cleaning semiconductor devicesEKC TECHNOLOGY INC·Filed 2008·Application pending·0 cites
- 2950US6199567B1Method and apparatus for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 13, 2001·16 cites·8 claims
- 3049US6462005B1Cleaning agent for a semiconductor device and a method of manufacturing a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 1995·Granted Oct 8, 2002·16 cites·15 claims
- 3145US6500270B2Resist film removing composition and method for manufacturing thin film circuit element using the compositionSHARP KK·Filed 1998·Granted Dec 31, 2002·9 cites·13 claims
- 3244US4218398AProcess for producing dimethylformamideMITSUBISHI GAS CHEMICAL CO·Filed 1978·Granted Aug 19, 1980·2 cites·4 claims
- 3343US2009218542A1Anisotropic silicon etchant compositionHAYASHI PURE CHEMICAL IND LTD·Filed 2009·Application pending·0 cites
- 3442US4230636AProcess for producing dimethyl formamideMITSUBISHI GAS CHEMICAL CO·Filed 1978·Granted Oct 28, 1980·1 cites·14 claims
- 3540US7341827B2Separation-material composition for photo-resist and manufacturing method of semiconductor deviceSONY CORP·Filed 2003·Granted Mar 11, 2008·0 cites·2 claims
- 3636US5538832ADeveloping solution for producing printed circuit boards and a process for producing printed circuit boards wherein the developing solution comprises a quaternary ammonium hydroxide and a quaternary ammonium carbonateMITSUBISHI GAS CHEMICAL CO·Filed 1994·Granted Jul 23, 1996·4 cites·14 claims
- 3735US2004081922A1Photoresist stripper compositionFiled 2002·Application pending·0 cites
- 3834US5693599AFlux washing agentMITSUBISHI GAS CHEMICAL CO·Filed 1996·Granted Dec 2, 1997·4 cites·3 claims
- 3933US8545716B2Etching liquid compositionTAGO TSUGUHIRO·Filed 2008·Granted Oct 1, 2013·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →