Inventor · disambiguated record
Tetsuo Endoh
Also filed as: ENDOH TETSUO
113 granted patents·7 pending applications·3,614 citations·filing 1989–2025
99Inventor score
Top patents by PatentIndex Score
120 records- 0199US5774397ANon-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined stateTOSHIBA KK·Filed 1996·Granted Jun 30, 1998·1.1k cites·54 claims
- 0298US5602789AElectrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controllerTOSHIBA KK·Filed 1995·Granted Feb 11, 1997·284 cites·25 claims
- 0398US5555204ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1994·Granted Sep 10, 1996·203 cites·34 claims
- 0498US5386422AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1994·Granted Jan 31, 1995·293 cites·2 claims
- 0597US6727544B2Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layerMASUOKA FUJIO·Filed 2002·Granted Apr 27, 2004·148 cites·32 claims
- 0697US6014330ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Jan 11, 2000·120 cites·56 claims
- 0797US5946231ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Aug 31, 1999·129 cites·56 claims
- 0896US11705176B2Storage circuit provided with variable resistance type elements, and its test deviceUNIV TOHOKU·Filed 2021·Granted Jul 18, 2023·5 cites·15 claims
- 0994US6933556B2Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layerSHARP KK·Filed 2002·Granted Aug 23, 2005·88 cites·46 claims
- 1094US6188611B1Non-volatile semiconductor memory deviceTOSHIBA KK·Filed 1999·Granted Feb 13, 2001·79 cites·6 claims
- 1194US5469444AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1994·Granted Nov 21, 1995·174 cites·20 claims
- 1294US5321699AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1992·Granted Jun 14, 1994·171 cites·20 claims
- 1393US6870215B2Semiconductor memory and its production processMASUOKA FUJIO·Filed 2002·Granted Mar 22, 2005·99 cites·22 claims
- 1492US11322221B2Memory device with pipelined accessSHARP SEMICONDUCTOR INNOVATION CORP·Filed 2020·Granted May 3, 2022·3 cites·20 claims
- 1592US5895949ASemiconductor device having inversion inducing gateTOSHIBA KK·Filed 1997·Granted Apr 20, 1999·88 cites·25 claims
- 1692US5523980ASemiconductor memory deviceTOSHIBA KK·Filed 1994·Granted Jun 4, 1996·99 cites·10 claims
- 1789US9466363B2Integrated circuitUNIV TOHOKU·Filed 2012·Granted Oct 11, 2016·9 cites·26 claims
- 1889US9012971B2Semiconductor device and method of manufacturing the sameSK HYNIX INC·Filed 2012·Granted Apr 21, 2015·9 cites·13 claims
- 1988US5677556ASemiconductor device having inversion inducing gateTOSHIBA KK·Filed 1996·Granted Oct 14, 1997·65 cites·15 claims
- 2085US11417378B2Integrated circuit deviceUNIV TOHOKU·Filed 2019·Granted Aug 16, 2022·3 cites·11 claims
- 2185US2025391466A1Storage circuit provided with variable resistance type elementsUNIV TOHOKU·Filed 2025·Application pending·0 cites
- 2283US8258571B2MOS semiconductor memory device having charge storage region formed from stack of insulating filmsENDOH TETSUO·Filed 2008·Granted Sep 4, 2012·11 cites·19 claims
- 2382US9941468B2Magnetoresistance effect element and magnetic memory deviceUNIV TOHOKU·Filed 2015·Granted Apr 10, 2018·9 cites·13 claims
- 2482US9299714B2Semiconductor device and method of manufacturing the sameSK HYNIX INC·Filed 2015·Granted Mar 29, 2016·3 cites·11 claims
- 2582US7135726B2Semiconductor memory and its production processSHARP KK·Filed 2001·Granted Nov 14, 2006·31 cites·38 claims
- 2681US5483484AElectrically erasable programmable read-only memory with an array of one-transistor memory cellsTOSHIBA KK·Filed 1994·Granted Jan 9, 1996·41 cites·36 claims
- 2780US4996669AElectrically erasable programmable read-only memory with NAND memory cell structureTOSHIBA KK·Filed 1990·Granted Feb 26, 1991·47 cites·20 claims
- 2879US11444552B2Electric power converting device, and electricity generating systemUNIV TOHOKU·Filed 2020·Granted Sep 13, 2022·1 cites·39 claims
- 2979US10665282B2Memory circuit provided with variable-resistance elementUNIV TOHOKU·Filed 2016·Granted May 26, 2020·5 cites·10 claims
- 3078US10164174B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted Dec 25, 2018·1 cites·25 claims
- 3176US11610614B2Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory deviceUNIV TOHOKU·Filed 2019·Granted Mar 21, 2023·1 cites·21 claims
- 3275US11770981B2Magnetoresistive element and magnetic memoryUNIV TOHOKU·Filed 2019·Granted Sep 26, 2023·1 cites·12 claims
- 3375US6593231B2Process of manufacturing electron microscopic sample and process of analyzing semiconductor deviceMASUOKA FUJIO·Filed 2002·Granted Jul 15, 2003·17 cites·8 claims
- 3475US5088060AElectrically erasable programmable read-only memory with NAND memory cell structureTOSHIBA KK·Filed 1990·Granted Feb 11, 1992·37 cites·21 claims
- 3572US10749107B2Method of manufacturing magnetic tunnel coupling elementUNIV TOHOKU·Filed 2017·Granted Aug 18, 2020·1 cites·5 claims
- 3672US5824583ANon-volatile semiconductor memory and method of manufacturing the sameTOSHIBA KK·Filed 1997·Granted Oct 20, 1998·26 cites·2 claims
- 3772US5179427ANon-volatile semiconductor memory device with voltage stabilizing electrodeTOSHIBA KK·Filed 1992·Granted Jan 12, 1993·32 cites·29 claims
- 3871US5355332AElectrically erasable programmable read-only memory with an array of one-transistor memory cellsTOSHIBA KK·Filed 1991·Granted Oct 11, 1994·30 cites·19 claims
- 3970US11690299B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted Jun 27, 2023·1 cites·9 claims
- 4070US10998491B2Magnetoresistive element and magnetic memoryUNIV TOHOKU·Filed 2019·Granted May 4, 2021·1 cites·19 claims
- 4170US10809232B2Optical fiber electromagnetic acoustic transducer pipe inspecting appartus and methodTOSHIBA KK·Filed 2015·Granted Oct 20, 2020·1 cites·10 claims
- 4270US10643701B2Memory device and memory systemUNIV TOHOKU·Filed 2017·Granted May 5, 2020·4 cites·27 claims
- 4370US8969944B2Semiconductor integrated circuit and method of producing the sameENDOH TETSUO·Filed 2011·Granted Mar 3, 2015·3 cites·12 claims
- 4470US5323039ANon-volatile semiconductor memory and method of manufacturing the sameTOSHIBA KK·Filed 1989·Granted Jun 21, 1994·20 cites·8 claims
- 4570US2025143192A1Stacked film, magnetoresistive effect element, semiconductor memory and logic lsiUNIV TOHOKU·Filed 2024·Application pending·0 cites
- 4669US12131764B2Device, sensor node, access controller, data transfer method, and processing method in microcontrollerUNIV TOHOKU·Filed 2023·Granted Oct 29, 2024·0 cites·6 claims
- 4769US7061038B2Semiconductor memory device and its production processFUJIO MASUOKA·Filed 2003·Granted Jun 13, 2006·15 cites·23 claims
- 4868US10693449B2Switching circuit device, step-down DC-DC converter, and element unitUNIV TOHOKU·Filed 2017·Granted Jun 23, 2020·1 cites·11 claims
- 4968US7141506B2Method for evaluating dependence of properties of semiconductor substrate on plane orientation and semiconductor device using the sameSHARP KK·Filed 2002·Granted Nov 28, 2006·11 cites·8 claims
- 5067US11887845B2Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrateGLOBALWAFERS JAPAN CO LTD·Filed 2021·Granted Jan 30, 2024·0 cites·5 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →