Inventor · disambiguated record
Ted Ming-Lang Guo
Also filed as: GUO TED MING-LANG
14 granted patents·6 pending applications·175 citations·filing 2011–2016
90Inventor score
Files withUNITED MICROELECTRONICS CORP11HSUAN TENG-CHUN3GUO TED MING-LANG2CHANG CHUNG-FU1HUANG HSIN-FU1
Top patents by PatentIndex Score
20 records- 0196US8470714B1Method of forming fin structures in integrated circuitsTSAI SHIH-HUNG·Filed 2012·Granted Jun 25, 2013·44 cites·10 claims
- 0296US8324059B2Method of fabricating a semiconductor structureGUO TED MING-LANG·Filed 2011·Granted Dec 4, 2012·97 cites·11 claims
- 0391US9419089B1Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 16, 2016·7 cites·9 claims
- 0489US8502288B2Semiconductor structure and method for slimming spacerGUO TED MING-LANG·Filed 2011·Granted Aug 6, 2013·11 cites·7 claims
- 0581US8476169B2Method of making strained silicon channel semiconductor structureYANG CHAN-LON·Filed 2011·Granted Jul 2, 2013·4 cites·14 claims
- 0679US9281201B2Method of manufacturing semiconductor device having metal gateUNITED MICROELECTRONICS CORP·Filed 2013·Granted Mar 8, 2016·4 cites·19 claims
- 0779US8883033B2Method for removing nitride materialUNITED MICROELECTRONICS CORP·Filed 2013·Granted Nov 11, 2014·5 cites·15 claims
- 0870US9502244B2Manufacturing method for forming semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Nov 22, 2016·1 cites·11 claims
- 0966US9466480B2Cleaning process for oxideUNITED MICROELECTRONICS CORP·Filed 2014·Granted Oct 11, 2016·1 cites·20 claims
- 1063US8841193B2Semiconductor structure and method for slimming spacerUNITED MICROELECTRONICS CORP·Filed 2013·Granted Sep 23, 2014·1 cites·13 claims
- 1155US8853740B2Strained silicon channel semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Oct 7, 2014·0 cites·7 claims
- 1243US10381228B2Epitaxial process applying light illuminationUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 13, 2019·0 cites·17 claims
- 1343US2015303283A1Method for manufacturing semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1441US9570315B2Method of interfacial oxide layer formation in semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Feb 14, 2017·0 cites·18 claims
- 1541US9514993B2Method for manufacturing semiconductor devices comprising epitaxial layersUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 6, 2016·0 cites·8 claims
- 1637US2013089962A1Semiconductor processCHANG CHUNG-FU·Filed 2011·Application pending·0 cites
- 1736US2012299157A1Semiconductor process and fabricated structure thereofHSUAN TENG-CHUN·Filed 2011·Application pending·0 cites
- 1836US2012309166A1Process for forming shallow trench isolation structureHSUAN TENG-CHUN·Filed 2011·Application pending·0 cites
- 1936US2013122684A1Semiconductor process for removing oxide layerHSUAN TENG-CHUN·Filed 2011·Application pending·0 cites
- 2035US2012256275A1Metal gate structure and manufacturing method thereofHUANG HSIN-FU·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →