Inventor · disambiguated record
Terence B. Hook
Also filed as: HOOK TERENCE · HOOK TERENCE B · HOOK TERENCE BLACKWELL
207 granted patents·40 pending applications·1,783 citations·filing 1994–2024
99Inventor score
Top patents by PatentIndex Score
247 records- 0199US9490335B1Extra gate device for nanosheetIBM·Filed 2015·Granted Nov 8, 2016·45 cites·8 claims
- 0298US10607938B1Power distribution networks for monolithic three-dimensional semiconductor integrated circuit devicesIBM·Filed 2018·Granted Mar 31, 2020·50 cites·10 claims
- 0398US9805935B2Bottom source/drain silicidation for vertical field-effect transistor (FET)IBM·Filed 2015·Granted Oct 31, 2017·27 cites·18 claims
- 0498US9761712B1Vertical transistors with merged active area regionsIBM·Filed 2016·Granted Sep 12, 2017·26 cites·23 claims
- 0598US9711501B1Interlayer viaIBM·Filed 2016·Granted Jul 18, 2017·34 cites·10 claims
- 0698US9515138B1Structure and method to minimize junction capacitance in nano sheetsIBM·Filed 2016·Granted Dec 6, 2016·33 cites·14 claims
- 0798US9431388B1Series-connected nanowire structuresIBM·Filed 2015·Granted Aug 30, 2016·36 cites·5 claims
- 0897US10170584B2Nanosheet field effect transistors with partial inside spacersIBM·Filed 2017·Granted Jan 1, 2019·11 cites·14 claims
- 0997US9853127B1Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer processIBM·Filed 2016·Granted Dec 26, 2017·18 cites·5 claims
- 1097US9583486B1Stable work function for narrow-pitch devicesIBM·Filed 2015·Granted Feb 28, 2017·20 cites·8 claims
- 1196US10515859B2Extra gate device for nanosheetIBM·Filed 2017·Granted Dec 24, 2019·9 cites·20 claims
- 1296US10504889B1Integrating a junction field effect transistor into a vertical field effect transistorIBM·Filed 2018·Granted Dec 10, 2019·13 cites·10 claims
- 1396US9947664B1Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2016·Granted Apr 17, 2018·15 cites·19 claims
- 1496US9589956B1Semiconductor device with different fin pitchesIBM·Filed 2016·Granted Mar 7, 2017·9 cites·20 claims
- 1595US10109639B1Lateral non-volatile storage cellIBM·Filed 2017·Granted Oct 23, 2018·12 cites·9 claims
- 1695US9577038B1Structure and method to minimize junction capacitance in nano sheetsIBM·Filed 2015·Granted Feb 21, 2017·10 cites·5 claims
- 1795US7132323B2CMOS well structure and method of forming the sameIBM·Filed 2003·Granted Nov 7, 2006·99 cites·25 claims
- 1894US10748901B2Interlayer via contacts for monolithic three-dimensional semiconductor integrated circuit devicesIBM·Filed 2018·Granted Aug 18, 2020·11 cites·15 claims
- 1994US10546787B2Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS deviceIBM·Filed 2018·Granted Jan 28, 2020·6 cites·11 claims
- 2094US10283411B1Stacked vertical transistor device for three-dimensional monolithic integrationIBM·Filed 2018·Granted May 7, 2019·12 cites·20 claims
- 2194US10170576B2Stable work function for narrow-pitch devicesIBM·Filed 2017·Granted Jan 1, 2019·7 cites·14 claims
- 2294US10134760B2FinFETs with various fin heightIBM·Filed 2017·Granted Nov 20, 2018·8 cites·10 claims
- 2394US9859172B1Bipolar transistor compatible with vertical FET fabricationIBM·Filed 2016·Granted Jan 2, 2018·9 cites·10 claims
- 2494US9786546B1Bulk to silicon on insulator deviceIBM·Filed 2016·Granted Oct 10, 2017·7 cites·18 claims
- 2594US9627484B1Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layerIBM·Filed 2015·Granted Apr 18, 2017·7 cites·15 claims
- 2694US8653596B2Integrated circuit including DRAM and SRAM/logicCHENG KANGGUO·Filed 2012·Granted Feb 18, 2014·16 cites·17 claims
- 2794US8619979B2Physically unclonable function implemented through threshold voltage comparisonFICKE JOEL T·Filed 2010·Granted Dec 31, 2013·39 cites·18 claims
- 2894US8552500B2Structure for CMOS ETSOI with multiple threshold voltages and active well bias capabilityDENNARD ROBERT H·Filed 2011·Granted Oct 8, 2013·18 cites·19 claims
- 2994US7067886B2Method of assessing potential for charging damage in SOI designs and structures for eliminating potential for damageIBM·Filed 2003·Granted Jun 27, 2006·95 cites·15 claims
- 3093US10249739B2Nanosheet MOSFET with partial release and source/drain epitaxyIBM·Filed 2017·Granted Apr 2, 2019·9 cites·18 claims
- 3193US9761525B1Multiple back gate transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 12, 2017·10 cites·19 claims
- 3293US5972765AUse of deuterated materials in semiconductor processingIBM·Filed 1997·Granted Oct 26, 1999·140 cites·35 claims
- 3392US10381346B1Logic gate designs for 3D monolithic direct stacked VTFETIBM·Filed 2018·Granted Aug 13, 2019·6 cites·10 claims
- 3492US10211316B2Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer processIBM·Filed 2017·Granted Feb 19, 2019·6 cites·14 claims
- 3592US9947743B2Structures and methods for long-channel devices in nanosheet technologyIBM·Filed 2016·Granted Apr 17, 2018·8 cites·19 claims
- 3692US9818650B2Extra gate device for nanosheetIBM·Filed 2016·Granted Nov 14, 2017·5 cites·11 claims
- 3792US9378329B1Immunity to inline charging damage in circuit designsIBM·Filed 2015·Granted Jun 28, 2016·10 cites·11 claims
- 3892US9009638B1Estimating transistor characteristics and tolerances for compact modelingIBM·Filed 2013·Granted Apr 14, 2015·17 cites·13 claims
- 3991US10128347B2Gate-all-around field effect transistor having multiple threshold voltagesIBM·Filed 2017·Granted Nov 13, 2018·6 cites·14 claims
- 4091US9673221B2Semiconductor device with low band-to-band tunnelingIBM·Filed 2015·Granted Jun 6, 2017·8 cites·19 claims
- 4190US10833069B2Logic gate designs for 3D monolithic direct stacked VTFETIBM·Filed 2019·Granted Nov 10, 2020·4 cites·11 claims
- 4290US9735250B2Stable work function for narrow-pitch devicesIBM·Filed 2016·Granted Aug 15, 2017·4 cites·15 claims
- 4389US9666693B1Structure and method to minimize junction capacitance in NANO sheetsIBM·Filed 2016·Granted May 30, 2017·4 cites·20 claims
- 4489US6239649B1Switched body SOI (silicon on insulator) circuits and fabrication method thereforIBM·Filed 1999·Granted May 29, 2001·78 cites·10 claims
- 4588US11170151B2Checking wafer-level integrated designs for rule complianceIBM·Filed 2020·Granted Nov 9, 2021·2 cites·17 claims
- 4688US6489223B1Angled implant processIBM·Filed 2001·Granted Dec 3, 2002·39 cites·18 claims
- 4787US10340340B2Multiple-threshold nanosheet transistorsIBM·Filed 2016·Granted Jul 2, 2019·3 cites·2 claims
- 4887US9484270B2Fully-depleted silicon-on-insulator transistorsIBM·Filed 2014·Granted Nov 1, 2016·5 cites·19 claims
- 4986US11146251B2Performance-screen ring oscillator with switchable featuresIBM·Filed 2020·Granted Oct 12, 2021·2 cites·15 claims
- 5086US10607992B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2017·Granted Mar 31, 2020·3 cites·18 claims
Showing the top 50 of 247 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →