Inventor · disambiguated record
Te-Chang Hsu
Also filed as: HSU TE-CHANG
16 granted patents·5 pending applications·64 citations·filing 2017–2024
91Inventor score
Top patents by PatentIndex Score
21 records- 0196US10109531B1Semiconductor structure having a bump lower than a substrate base and a width of the bump larger than a width of fin shaped structures, and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 23, 2018·31 cites·20 claims
- 0294US10211314B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 19, 2019·7 cites·6 claims
- 0393US10283415B2Semiconductor structure with a bump having a width larger than a width of fin shaped structures and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted May 7, 2019·8 cites·20 claims
- 0491US10037915B1Fabricating method of a semiconductor structure with an epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 31, 2018·8 cites·9 claims
- 0590US10249729B1Method for fabricating metal replacement gate semiconductor device using dummy gate and composite spacer structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 2, 2019·7 cites·7 claims
- 0684US12501681B2Semiconductor device and method for fabricating the sameMARLIN SEMICONDUCTOR LTD·Filed 2024·Granted Dec 16, 2025·0 cites·5 claims
- 0777US11901437B2Semiconductor device and method for fabricating the sameMARLIN SEMICONDUCTOR LTD·Filed 2022·Granted Feb 13, 2024·0 cites·9 claims
- 0873US11355619B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jun 7, 2022·0 cites·9 claims
- 0973US10777657B2Metal gate transistor with a stacked double sidewall spacer structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 15, 2020·1 cites·10 claims
- 1073US10700163B2Semiconductor device including conductive structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 30, 2020·1 cites·8 claims
- 1173US2023352565A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1272US10608113B1Semiconductor structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 31, 2020·1 cites·19 claims
- 1369US11742412B2Method for fabricating a metal gate transistor with a stacked double sidewall spacer structureUNITED MICROELECTRONICS CORP·Filed 2020·Granted Aug 29, 2023·0 cites·1 claims
- 1465US10651290B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted May 12, 2020·0 cites·10 claims
- 1562US10892365B2Fin field effect transistor having crystalline titanium germanosilicide stressor layerUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jan 12, 2021·0 cites·8 claims
- 1660US10957762B2Manufacturing method of semiconductor device including conductive structureUNITED MICROELECTRONICS CORP·Filed 2020·Granted Mar 23, 2021·0 cites·9 claims
- 1756US2024339501A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1851US2024071818A1Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 1943US10211107B1Method of fabricating fins including removing dummy fins after fluorocarbon flush step and oxygen clean stepUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 19, 2019·0 cites·6 claims
- 2040US2020194058A1Layout pattern for sram and manufacturing methods thereofUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 2137US2019103492A1Method for fabricating semiconductor device involving forming epitaxial materialUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →