Inventor · disambiguated record
Tetsuya Ishikawa
Also filed as: ISHIKAWA TETSUYA
252 granted patents·104 pending applications·10,956 citations·filing 1991–2025
99Inventor score
Top patents by PatentIndex Score
356 records- 0199US6303523B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Oct 16, 2001·751 cites·53 claims
- 0299US5944902APlasma source for HDP-CVD chamberAPPLIED MATERIALS INC·Filed 1998·Granted Aug 31, 1999·335 cites·18 claims
- 0398US10406838B2Inkjet printing apparatusCANON KK·Filed 2018·Granted Sep 10, 2019·13 cites·20 claims
- 0498US8876280B2Printing apparatusCANON KK·Filed 2013·Granted Nov 4, 2014·20 cites·11 claims
- 0598US7955986B2Capacitively coupled plasma reactor with magnetic plasma controlAPPLIED MATERIALS INC·Filed 2006·Granted Jun 7, 2011·70 cites·13 claims
- 0698US7925377B2Cluster tool architecture for processing a substrateAPPLIED MATERIALS INC·Filed 2006·Granted Apr 12, 2011·45 cites·3 claims
- 0798US7743728B2Cluster tool architecture for processing a substrateAPPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·36 cites·16 claims
- 0898US7694647B2Cluster tool architecture for processing a substrateAPPLIED MATERIALS INC·Filed 2006·Granted Apr 13, 2010·42 cites·19 claims
- 0998US7357842B2Cluster tool architecture for processing a substrateSOKUDO CO LTD·Filed 2005·Granted Apr 15, 2008·106 cites·11 claims
- 1098US7036453B2Apparatus for reducing plasma charge damage for plasma processesAPPLIED MATERIALS INC·Filed 2003·Granted May 2, 2006·467 cites·14 claims
- 1198US6929700B2Hydrogen assisted undoped silicon oxide deposition process for HDP-CVDAPPLIED MATERIALS INC·Filed 2003·Granted Aug 16, 2005·482 cites·18 claims
- 1298US6660662B2Method of reducing plasma charge damage for plasma processesAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·478 cites·15 claims
- 1398US6596653B2Hydrogen assisted undoped silicon oxide deposition process for HDP-CVDAPPLIED MATERIALS INC·Filed 2001·Granted Jul 22, 2003·542 cites·29 claims
- 1498US6447651B1High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambersAPPLIED MATERIALS INC·Filed 2001·Granted Sep 10, 2002·501 cites·24 claims
- 1598US6182602B1Inductively coupled HDP-CVD reactorAPPLIED MATERIALS INC·Filed 1997·Granted Feb 6, 2001·386 cites·20 claims
- 1698US6083344AMulti-zone RF inductively coupled source configurationAPPLIED MATERIALS INC·Filed 1997·Granted Jul 4, 2000·346 cites·18 claims
- 1797US10974527B2Inkjet printing apparatusCANON KK·Filed 2019·Granted Apr 13, 2021·9 cites·23 claims
- 1897US9415960B2Printing apparatus and printing methodCANON KK·Filed 2015·Granted Aug 16, 2016·12 cites·17 claims
- 1997US9004640B2Printing apparatusCANON KK·Filed 2014·Granted Apr 14, 2015·17 cites·10 claims
- 2097US7699021B2Cluster tool substrate throughput optimizationSOKUDO CO LTD·Filed 2006·Granted Apr 20, 2010·45 cites·8 claims
- 2197US6853141B2Capacitively coupled plasma reactor with magnetic plasma controlFiled 2002·Granted Feb 8, 2005·140 cites·30 claims
- 2297US6562690B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted May 13, 2003·102 cites·26 claims
- 2397US6518195B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 2000·Granted Feb 11, 2003·162 cites·8 claims
- 2497US6348725B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1999·Granted Feb 19, 2002·161 cites·38 claims
- 2597US6189483B1Process kitAPPLIED MATERIALS INC·Filed 1997·Granted Feb 20, 2001·341 cites·23 claims
- 2697US6170428B1Symmetric tunable inductively coupled HDP-CVD reactorAPPLIED MATERIALS INC·Filed 1996·Granted Jan 9, 2001·430 cites·26 claims
- 2797US5772771ADeposition chamber for improved deposition thickness uniformityAPPLIED MATERIALS INC·Filed 1995·Granted Jun 30, 1998·176 cites·14 claims
- 2897US5556501ASilicon scavenger in an inductively coupled RF plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted Sep 17, 1996·396 cites·15 claims
- 2996US8146530B2Cluster tool architecture for processing a substrateISHIKAWA TETSUYA·Filed 2008·Granted Apr 3, 2012·22 cites·8 claims
- 3096US6734115B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted May 11, 2004·67 cites·12 claims
- 3196US6660656B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·111 cites·11 claims
- 3296US6596655B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Jul 22, 2003·77 cites·20 claims
- 3396US6541282B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 1, 2003·80 cites·17 claims
- 3496US6488807B1Magnetic confinement in a plasma reactor having an RF bias electrodeAPPLIED MATERIALS INC·Filed 2000·Granted Dec 3, 2002·145 cites·6 claims
- 3596US6416823B2Deposition chamber and method for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Jul 9, 2002·61 cites·24 claims
- 3695US10608149B2Wavelength converting member and light emitting deviceNICHIA CORP·Filed 2019·Granted Mar 31, 2020·8 cites·15 claims
- 3795US8833811B2Trunk locking systemISHIKAWA TETSUYA·Filed 2011·Granted Sep 16, 2014·27 cites·10 claims
- 3895US8651638B2Inkjet printing apparatusISHIKAWA TETSUYA·Filed 2011·Granted Feb 18, 2014·11 cites·9 claims
- 3995US8550031B2Cluster tool architecture for processing a substrateISHIKAWA TETSUYA·Filed 2012·Granted Oct 8, 2013·13 cites·10 claims
- 4095US8449950B2In-situ deposition of battery active lithium materials by plasma sprayingSHANG QUANYUAN·Filed 2010·Granted May 28, 2013·28 cites·11 claims
- 4195US7560377B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jul 14, 2009·19 cites·16 claims
- 4295US6833052B2Deposition chamber and method for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted Dec 21, 2004·65 cites·38 claims
- 4395US6589610B2Deposition chamber and method for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted Jul 8, 2003·53 cites·46 claims
- 4495US6070551ADeposition chamber and method for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1997·Granted Jun 6, 2000·135 cites·20 claims
- 4595US5824607APlasma confinement for an inductively coupled plasma reactorAPPLIED MATERIALS INC·Filed 1997·Granted Oct 20, 1998·144 cites·24 claims
- 4695US5761023ASubstrate support with pressure zones having reduced contact area and temperature feedbackAPPLIED MATERIALS INC·Filed 1996·Granted Jun 2, 1998·218 cites·43 claims
- 4794US8215262B2Cluster tool architecture for processing a substrateISHIKAWA TETSUYA·Filed 2008·Granted Jul 10, 2012·15 cites·9 claims
- 4894US8211697B2Induced pluripotent stem cells produced using reprogramming factors and a rho kinase inhibitor or a histone deacetylase inhibitorSAKURADA KAZUHIRO·Filed 2008·Granted Jul 3, 2012·35 cites·3 claims
- 4994US8181596B2Cluster tool architecture for processing a substrateISHIKAWA TETSUYA·Filed 2008·Granted May 22, 2012·15 cites·20 claims
- 5094US6341151B1Preventive maintenance method and apparatus of a structural member in a reactor pressure vesselHITACHI LTD·Filed 2000·Granted Jan 22, 2002·29 cites·11 claims
Showing the top 50 of 356 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →