Inventor · disambiguated record
Terence L. Kane
Also filed as: KANE TERENCE · KANE TERENCE L · KANE TERENCE LAWRENCE
37 granted patents·6 pending applications·271 citations·filing 1999–2018
97Inventor score
Top patents by PatentIndex Score
43 records- 0193US10032683B2Time temperature monitoring systemIBM·Filed 2015·Granted Jul 24, 2018·10 cites·5 claims
- 0290US10504807B2Time temperature monitoring systemIBM·Filed 2018·Granted Dec 10, 2019·5 cites·19 claims
- 0388US7205237B2Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterizationIBM·Filed 2005·Granted Apr 17, 2007·15 cites·20 claims
- 0486US9279849B2Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devicesIBM·Filed 2015·Granted Mar 8, 2016·4 cites·20 claims
- 0583US9170273B2High frequency capacitance-voltage nanoprobing characterizationIBM·Filed 2013·Granted Oct 27, 2015·6 cites·17 claims
- 0682US6887783B2Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereofINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 3, 2005·26 cites·18 claims
- 0781US9470712B1Apparatus and method for atomic force probing/SEM nano-probing/scanning probe microscopy and collimated ion millingGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 18, 2016·5 cites·14 claims
- 0880US8236709B2Method of fabricating a device using low temperature anneal processes, a device and design structureDOMENICUCCI ANTHONY G·Filed 2009·Granted Aug 7, 2012·6 cites·20 claims
- 0980US6894522B2Specific site backside underlaying and micromasking method for electrical characterization of semiconductor devicesIBM·Filed 2003·Granted May 17, 2005·29 cites·15 claims
- 1077US8701511B2Inert gas delivery system for electrical inspection apparatusOLDREY RICHARD WALTER·Filed 2011·Granted Apr 22, 2014·4 cites·10 claims
- 1177US7993504B2Backside unlayering of MOSFET devices for electrical and physical characterizationIBM·Filed 2008·Granted Aug 9, 2011·3 cites·20 claims
- 1276US7371689B2Backside unlayering of MOSFET devices for electrical and physical characterizationIBM·Filed 2005·Granted May 13, 2008·3 cites·14 claims
- 1375US6261951B1Plasma treatment to enhance inorganic dielectric adhesion to copperIBM·Filed 1999·Granted Jul 17, 2001·34 cites·19 claims
- 1473US6790125B2Backside integrated circuit die surface finishing technique and toolIBM·Filed 2000·Granted Sep 14, 2004·13 cites·3 claims
- 1572US6593660B2Plasma treatment to enhance inorganic dielectric adhesion to copperIBM·Filed 2001·Granted Jul 15, 2003·11 cites·12 claims
- 1671US8125048B2Antifuse structure for in line circuit modificationKANE TERENCE L·Filed 2009·Granted Feb 28, 2012·3 cites·4 claims
- 1771US6914320B2Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect structures and method thereofINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 5, 2005·13 cites·17 claims
- 1871US6670717B2Structure and method for charge sensitive electrical devicesIBM·Filed 2001·Granted Dec 30, 2003·13 cites·21 claims
- 1971US6630395B1Methods for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materialsIBM·Filed 2002·Granted Oct 7, 2003·15 cites·14 claims
- 2070US7008803B2Method of reworking structures incorporating low-k dielectric materialsIBM·Filed 2002·Granted Mar 7, 2006·14 cites·8 claims
- 2170US6858530B2Method for electrically characterizing charge sensitive semiconductor devicesIBM·Filed 2003·Granted Feb 22, 2005·12 cites·10 claims
- 2268US8367484B2Antifuse structure for in line circuit modificationIBM·Filed 2012·Granted Feb 5, 2013·1 cites·5 claims
- 2367US6884641B2Site-specific methodology for localization and analyzing junction defects in mosfet devicesIBM·Filed 2003·Granted Apr 26, 2005·11 cites·20 claims
- 2461US8466443B2Voltage sensitive resistor (VSR) read only memoryKANE TERENCE L·Filed 2010·Granted Jun 18, 2013·1 cites·21 claims
- 2560US10217682B2Time temperature monitoring systemIBM·Filed 2018·Granted Feb 26, 2019·0 cites·19 claims
- 2659US7881093B2Programmable precision resistor and method of programming the sameIBM·Filed 2008·Granted Feb 1, 2011·1 cites·10 claims
- 2757US9052338B2Inert gas delivery system for electrical inspection apparatusIBM·Filed 2013·Granted Jun 9, 2015·0 cites·3 claims
- 2856US6703641B2Structure for detecting charging effects in device processingIBM·Filed 2001·Granted Mar 9, 2004·6 cites·9 claims
- 2955US6888224B1Methods and systems for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materialsIBM·Filed 2003·Granted May 3, 2005·5 cites·4 claims
- 3054US8368070B2Antifuse structure for in line circuit modificationIBM·Filed 2012·Granted Feb 5, 2013·0 cites·8 claims
- 3154US8368069B2Antifuse structure for in line circuit modificationIBM·Filed 2012·Granted Feb 5, 2013·0 cites·2 claims
- 3254US8367483B2Antifuse structure for in line circuit modificationIBM·Filed 2012·Granted Feb 5, 2013·0 cites·2 claims
- 3353US9201112B2Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devicesIBM·Filed 2013·Granted Dec 1, 2015·0 cites·20 claims
- 3452US2014295584A1Low energy collimated ion milling of semiconductor structuresIBM·Filed 2013·Application pending·0 cites
- 3551US8536555B2Voltage sensitive resistor (VSR) read only memoryIBM·Filed 2013·Granted Sep 17, 2013·0 cites·20 claims
- 3650US8490029B2Method of fabricating a device using low temperature anneal processes, a device and design structureDOMENICUCCI ANTHONY G·Filed 2012·Granted Jul 16, 2013·0 cites·11 claims
- 3747US2016035633A1Low energy collimated ion milling of semiconductor structuresIBM·Filed 2015·Application pending·0 cites
- 3846US6852629B2Backside integrated circuit die surface finishing technique and toolIBM·Filed 2004·Granted Feb 8, 2005·2 cites·23 claims
- 3944US7015146B2Method of processing backside unlayering of MOSFET devices for electrical and physical characterization including a collimated ion plasmaIBM·Filed 2004·Granted Mar 21, 2006·0 cites·15 claims
- 4043US2015076695A1Selective passivation of viasIBM·Filed 2013·Application pending·0 cites
- 4143US2005285106A1Method of reworking structures incorporating low-k dielectric materialsIBM·Filed 2005·Application pending·0 cites
- 4240US2003134499A1Bilayer HDP CVD / PE CVD cap in advanced BEOL interconnect structures and method thereofIBM·Filed 2002·Application pending·0 cites
- 4331US2016225919A1Device structure with negative resistance characteristicsGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →