Inventor · disambiguated record
Tetsuya Mizuguchi
Also filed as: MIZUGUCHI TETSUYA
45 granted patents·7 pending applications·459 citations·filing 1990–2022
98Inventor score
Files withSONY CORP32OHBA KAZUHIRO5MIZUGUCHI TETSUYA3SONY SEMICONDUCTOR SOLUTIONS CORP3YASUDA SHUICHIRO2
Top patents by PatentIndex Score
52 records- 0192US7775866B2Game apparatus and method for falling block game with launched rising objectsBANDAI CO·Filed 2005·Granted Aug 17, 2010·32 cites·26 claims
- 0291US7307270B2Memory element and memory deviceSONY CORP·Filed 2005·Granted Dec 11, 2007·26 cites·4 claims
- 0390US7315053B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2003·Granted Jan 1, 2008·42 cites·6 claims
- 0490US7026671B2Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2003·Granted Apr 11, 2006·51 cites·13 claims
- 0589US7262064B2Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereofSONY CORP·Filed 2002·Granted Aug 28, 2007·49 cites·39 claims
- 0688US8427860B2Memory component, memory device, and method of operating memory deviceOHBA KAZUHIRO·Filed 2011·Granted Apr 23, 2013·10 cites·22 claims
- 0788US7696511B2Memory element and memory deviceSONY CORP·Filed 2008·Granted Apr 13, 2010·13 cites·18 claims
- 0888US6831314B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2003·Granted Dec 14, 2004·45 cites·8 claims
- 0985US8547735B2Memory element and memory deviceMIZUGUCHI TETSUYA·Filed 2009·Granted Oct 1, 2013·10 cites·7 claims
- 1085US6990014B2Magnetoresistive element and magnetic memory unitSONY CORP·Filed 2005·Granted Jan 24, 2006·14 cites·3 claims
- 1181US6621666B2Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivitySONY CORP·Filed 2001·Granted Sep 16, 2003·25 cites·8 claims
- 1280US6999288B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2005·Granted Feb 14, 2006·8 cites·3 claims
- 1379US9058873B2Memory element having ion source layers with different contents of a chalcogen elementSHIMUTA MASAYUKI·Filed 2012·Granted Jun 16, 2015·8 cites·12 claims
- 1479US8295074B2Memory cellYASUDA SHUICHIRO·Filed 2008·Granted Oct 23, 2012·11 cites·19 claims
- 1577US7675053B2Memory device comprising a memory layer and a metal chalcogenide ion-source layerSONY CORP·Filed 2006·Granted Mar 9, 2010·3 cites·20 claims
- 1674US9489938B2Sound synthesis method and sound synthesis apparatusYAMAHA CORP·Filed 2013·Granted Nov 8, 2016·5 cites·13 claims
- 1774US6879473B2Magnetoresistive device and magnetic memory deviceSONY CORP·Filed 2003·Granted Apr 12, 2005·10 cites·6 claims
- 1873US8730709B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2013·Granted May 20, 2014·3 cites·14 claims
- 1973US7786459B2Memory element and memory device comprising memory layer positioned between first and second electrodesSONY CORP·Filed 2005·Granted Aug 31, 2010·7 cites·6 claims
- 2072US6992868B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2005·Granted Jan 31, 2006·6 cites·3 claims
- 2172US6815745B2Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2003·Granted Nov 9, 2004·12 cites·3 claims
- 2271US9543514B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2015·Granted Jan 10, 2017·2 cites·12 claims
- 2369US7034348B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2003·Granted Apr 25, 2006·16 cites·5 claims
- 2469US6765769B2Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic headSONY CORP·Filed 2001·Granted Jul 20, 2004·6 cites·6 claims
- 2568US9240549B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2014·Granted Jan 19, 2016·2 cites·20 claims
- 2668US8492740B2Memory element and memory deviceOHBA KAZUHIRO·Filed 2008·Granted Jul 23, 2013·6 cites·35 claims
- 2762US8912516B2Memory element with ion source layer and memory deviceOHBA KAZUHIRO·Filed 2012·Granted Dec 16, 2014·2 cites·14 claims
- 2861US8885385B2Memory element and memory deviceMIZUGUCHI TETSUYA·Filed 2012·Granted Nov 11, 2014·2 cites·14 claims
- 2961US7700982B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2007·Granted Apr 20, 2010·1 cites·4 claims
- 3061US7206173B2Magnetoresistive-effect element having a prominent magnetoresistive effect, and method of manufacturing sameSONY CORP·Filed 2001·Granted Apr 17, 2007·4 cites·10 claims
- 3158US8685786B2Method of manufacturing a semiconductor memory device having a resistance change memory layerSONY CORP·Filed 2013·Granted Apr 1, 2014·0 cites·5 claims
- 3257US7099124B2Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic headSONY CORP·Filed 2004·Granted Aug 29, 2006·2 cites·6 claims
- 3355US6967386B2Magnetic memory deviceSONY CORP·Filed 2002·Granted Nov 22, 2005·8 cites·3 claims
- 3454US8816313B2Memory element and memory deviceOHBA KAZUHIRO·Filed 2009·Granted Aug 26, 2014·0 cites·11 claims
- 3554US2024114701A1Nonvolatile memory device and manufacturing method thereofSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2021·Application pending·0 cites
- 3652US8873281B2Memory element and memory deviceSONY CORP·Filed 2013·Granted Oct 28, 2014·0 cites·16 claims
- 3752US2024415033A1Storage element and storage deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2022·Application pending·0 cites
- 3849US2011031466A1Semiconductor memory device and a method of manufacturing the sameSONY CORP·Filed 2010·Application pending·0 cites
- 3948US9231200B2Memory element and memory deviceSONY CORP·Filed 2014·Granted Jan 5, 2016·0 cites·16 claims
- 4048US7173300B2Magnetoresistive element, method for making the same, and magnetic memory device incorporating the sameSONY CORP·Filed 2002·Granted Feb 6, 2007·5 cites·6 claims
- 4147US9577187B2Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating sameSONY CORP·Filed 2015·Granted Feb 21, 2017·0 cites·14 claims
- 4247US9356232B2Method of making memory element with ion source layer comprised of two or more unit IO source layersSONY CORP·Filed 2014·Granted May 31, 2016·0 cites·18 claims
- 4347US2006187703A1Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2005·Application pending·0 cites
- 4441US9202560B2Memory element and memory device with ion source layer and resistance change layerMIZUGUCHI TETSUYA·Filed 2012·Granted Dec 1, 2015·0 cites·11 claims
- 4541US9136470B2Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating sameMAESAKA AKIHIRO·Filed 2010·Granted Sep 15, 2015·0 cites·8 claims
- 4641US8796657B2Memory element and memory deviceYASUDA SHUICHIRO·Filed 2012·Granted Aug 5, 2014·0 cites·11 claims
- 4741US5099112ADetector position adjusting mechanism for rangefinder automatic focusing systemMINOLTA CAMERA KK·Filed 1990·Granted Mar 24, 1992·9 cites·26 claims
- 4840US2006125034A1Magnetoresistant device and magnetic memory device further commentsOHBA KAZUHIRO·Filed 2003·Application pending·0 cites
- 4939US2022293855A1Storage device and storage unitSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Application pending·0 cites
- 5037US9112149B2Memory element and method of manufacturing the same, and memory deviceSEI HIROAKI·Filed 2011·Granted Aug 18, 2015·0 cites·13 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →