Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device

Abstract

A magnetoresistive effect element ( 1 ) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer ( 5 ) and magnetization free layer ( 7 )) is opposed to each other through an intermediate layer ( 6 ) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element ( 1 ) and bit lines and word lines sandwiching the magnetoresistive effect element ( 1 ) in the thickness direction. When the magnetoresistive effect element ( 1 ) and the magnetic memory device are manufactured, the ferromagnetic material layers ( 5, 7 ) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.

1 - 8 . (canceled)  
     
     
         9 . In a method of manufacturing a magnetoresistive effect element in which a pair of ferromagnetic material layers are opposed to each other with an intermediate layer there between to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface, a method of manufacturing a magnetoresistive effect element comprising: 
 for annealing said ferromagnetic material layers by rotating field anneal; and    for annealing said ferromagnetic material layers by static field anneal later on.    
     
     
         10 . In a method of manufacturing a magnetic memory device comprising a magnetoresistive effect element in which a pair of ferromagnetic material layers are opposed to each other with an intermediate layer there between to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and word lines and bit lines sandwiching said magnetoresistive effect element in the thickness direction, a method of manufacturing a magnetic memory device comprising: 
 for annealing said ferromagnetic material layers of said magnetoresistive effect element by rotating field anneal; and    for annealing said ferromagnetic material layer by static field anneal later on.    
     
     
         11 . A method of manufacturing a magnetoresistive effect element comprising: 
 providing the magnetoresistive effect element, wherein the magnetoresistive effect element comprises a pair of ferromagnetic layers, each having a surface, and an intermediate layer disposed between the ferromagnetic layers, wherein said magnetoresistive effect element is configured to provide for a magnetoresistive change defining information which is read by causing a current to flow in a direction perpendicular to the surfaces of the ferromagnetic layers;    annealing at least one of the ferromagnetic layers of the magnetoresistive effect element while    rotating the magnetoresistive effect element and also; while rotating the magnetoresistive effect element, applying a magnetic field to the magnetoresistive effect element; and stopping the rotation of the magnetoresistive effect element while continuing to apply the magnetic-field.    
     
     
         12 . A method as recited in claim  14 , further comprising: 
 providing a wafer having a major surface, wherein the magnetoresistive affect element is disposed on the major surface;    placing the wafer in a vacuum chamber, rotating the wafer; while rotating the wafer, applying a magnetic field to the wafer such that the major surface of the wafer is parallel to a direction of the magnetic field, stopping the rotation of the wafer while continuing to apply the magnetic field.    
     
     
         13 . A method as recited in claim  14 , further comprising patterning the magnetoresistive effect element after annealing at least one of the ferromagnetic layers.