Inventor · disambiguated record
Teruhito Ohnishi
Also filed as: OHNISHI TERUHITO
32 granted patents·4 pending applications·415 citations·filing 1991–2010
97Inventor score
Top patents by PatentIndex Score
36 records- 0193US7808358B2Inductor and method for fabricating the samePANASONIC CORP·Filed 2009·Granted Oct 5, 2010·24 cites·12 claims
- 0291US6399993B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 4, 2002·67 cites·10 claims
- 0383US6759697B2Heterojunction bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 6, 2004·24 cites·13 claims
- 0478US7465969B2Bipolar transistor and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Dec 16, 2008·7 cites·8 claims
- 0578US5500379AMethod of manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Mar 19, 1996·46 cites·9 claims
- 0678US5327012ASemiconductor device having a double-layer interconnection structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Jul 5, 1994·60 cites·11 claims
- 0774US6674149B2Bipolar transistor device having phosphorousMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jan 6, 2004·15 cites·7 claims
- 0866US7091099B2Bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 15, 2006·11 cites·8 claims
- 0964US5365095ASemiconductor memory device and processMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Nov 15, 1994·30 cites·7 claims
- 1062US6642607B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Nov 4, 2003·9 cites·3 claims
- 1161US7719031B2Heterojunction biploar transistor and method for manufacturing samePANASONIC CORP·Filed 2004·Granted May 18, 2010·9 cites·4 claims
- 1261US6838395B1Method for fabricating a semiconductor crystalMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jan 4, 2005·6 cites·13 claims
- 1359US6861316B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 1, 2005·7 cites·8 claims
- 1458US6867107B2Variable capacitance device and process for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 15, 2005·8 cites·5 claims
- 1555US6828602B2Bipolar transistor and method manufacture thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Dec 7, 2004·10 cites·5 claims
- 1654US7109095B2Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 19, 2006·5 cites·13 claims
- 1754US7049681B2Bipolar transistor device having phosphorousMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 23, 2006·4 cites·7 claims
- 1853US6927118B2Method of fabricating a bipolar transistor utilizing a dry etching and a wet etching to define a base junction openingMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 9, 2005·6 cites·8 claims
- 1953US6847062B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 25, 2005·5 cites·16 claims
- 2052US6917075B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jul 12, 2005·4 cites·11 claims
- 2151US6987072B2Method of producing semiconductor crystalMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jan 17, 2006·2 cites·16 claims
- 2251US5449934ASemiconductor memory device and processMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Sep 12, 1995·17 cites·2 claims
- 2350US7135721B2Heterojunction bipolar transistor having reduced driving voltage requirementsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Nov 14, 2006·3 cites·13 claims
- 2448US6847063B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 25, 2005·3 cites·12 claims
- 2548US6620665B1Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Sep 16, 2003·13 cites·14 claims
- 2647US6800532B2Method of manufacturing a semiconductor device comprising a bipolar transistor and a variable capacitorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Oct 5, 2004·3 cites·5 claims
- 2743US7145168B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Dec 5, 2006·0 cites·6 claims
- 2841US6214126B1Method for cleaning a silicon substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Apr 10, 2001·9 cites·7 claims
- 2938US6939772B2Bipolar transistor and fabrication method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Sep 6, 2005·2 cites·4 claims
- 3038US2006225642A1Method of forming semiconductor crystalKANZAWA YOSHIHIKO·Filed 2003·Application pending·0 cites
- 3138US2002163013A1Heterojunction bipolar transistorFiled 2001·Application pending·0 cites
- 3235US2004256635A1Hetero bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Application pending·0 cites
- 3334US2010283084A1Bipolar transistor and method for fabricating the sameOHNISHI TERUHITO·Filed 2010·Application pending·0 cites
- 3432US5472826ASemiconductor device fabrication methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Dec 5, 1995·4 cites·8 claims
- 3531US7129168B2Method of estimating substrate temperatureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Oct 31, 2006·0 cites·12 claims
- 3630US5198884ASemiconductor devices having a double-layer interconnection structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Mar 30, 1993·2 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →