Inventor · disambiguated record
Tetsu Ohtou
Also filed as: OHTOU TETSU
19 granted patents·4 pending applications·80 citations·filing 2014–2025
92Inventor score
Top patents by PatentIndex Score
23 records- 0198US10038079B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·43 cites·20 claims
- 0296US11031395B2Method of forming high performance MOSFETs having varying channel structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·13 cites·20 claims
- 0391US11289589B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 0491US10170413B2Semiconductor device having buried metal line and fabrication method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·7 cites·20 claims
- 0588US11855090B2High performance MOSFETs having varying channel structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
- 0684US11532622B2High performance MOSFETs having different device characteristicsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 20, 2022·2 cites·20 claims
- 0784US10790381B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·2 cites·20 claims
- 0882US10516038B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·2 cites·20 claims
- 0982US9337263B2Semiconductor device including a semiconductor sheet unit interconnecting a source and a drainTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·5 cites·18 claims
- 1081US2024113119A1High performance mosfets having varying channel structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1178US11956938B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·0 cites·20 claims
- 1272US10522459B2Method for fabricating semiconductor device having buried metal lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·1 cites·20 claims
- 1370US11393830B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·20 claims
- 1469US9570612B2Method and structure for straining carrier channel in vertical gate all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·2 cites·20 claims
- 1563US2025323051A1Method for manufacturing semiconductor device and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 1660US10658370B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·0 cites·20 claims
- 1760US9871111B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 16, 2018·0 cites·20 claims
- 1859US2024203832A1Semiconductor device and semiconductor device manufacturing methodTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1958US10510856B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
- 2053US10347746B2Method and structure for straining carrier channel in vertical gate all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 9, 2019·0 cites·20 claims
- 2153US9711595B2Semiconductor device including a semiconductor sheet unit interconnecting a source and a drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·0 cites·20 claims
- 2250US2024413146A1Method of manufacturing semiconductor device and semiconductor deviceTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2345US10510739B2Method of providing layout design of SRAM cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →