Inventor · disambiguated record
Tetsuhiro Suzuki
Also filed as: SUZUKI TETSUHIRO
49 granted patents·1 pending application·380 citations·filing 1995–2019
98Inventor score
Top patents by PatentIndex Score
50 records- 0192US7929342B2Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memoryNEC CORP·Filed 2006·Granted Apr 19, 2011·29 cites·43 claims
- 0291US9082497B2Magnetic memory using spin orbit interactionSUZUKI TETSUHIRO·Filed 2011·Granted Jul 14, 2015·11 cites·14 claims
- 0390US8040724B2Magnetic domain wall random access memoryNEC CORP·Filed 2008·Granted Oct 18, 2011·22 cites·15 claims
- 0489US8379429B2Domain wall motion element and magnetic random access memoryNEC CORP·Filed 2009·Granted Feb 19, 2013·20 cites·15 claims
- 0588US8830735B2Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy filmKARIYADA EIJI·Filed 2011·Granted Sep 9, 2014·10 cites·5 claims
- 0687US8503222B2Non-volatile logic circuitSUZUKI TETSUHIRO·Filed 2010·Granted Aug 6, 2013·11 cites·28 claims
- 0787US8120127B2Magnetic random access memory and method of manufacturing the sameNAGAHARA KIYOKAZU·Filed 2008·Granted Feb 21, 2012·19 cites·9 claims
- 0885US8154913B2Magnetoresistance effect element and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted Apr 10, 2012·11 cites·20 claims
- 0985US7242047B2Magnetic memory adopting synthetic antiferromagnet as free magnetic layerNEC CORP·Filed 2005·Granted Jul 10, 2007·12 cites·19 claims
- 1084US9379312B2Magnetoresistive effect element and magnetic random access memory using the sameSUGIBAYASHI TADAHIKO·Filed 2010·Granted Jun 28, 2016·7 cites·9 claims
- 1182US7817462B2Magnetic random access memoryNEC CORP·Filed 2006·Granted Oct 19, 2010·14 cites·25 claims
- 1281US9508923B2Magnetic memory using spin orbit interactionRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 29, 2016·5 cites·5 claims
- 1381US8559214B2Magnetic memory device and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Oct 15, 2013·12 cites·23 claims
- 1480US8194436B2Magnetic random access memory, write method therefor, and magnetoresistance effect elementFUKAMI SHUNSUKE·Filed 2008·Granted Jun 5, 2012·8 cites·17 claims
- 1578US8174873B2Magnetic random access memory and initializing method for the sameSUZUKI TETSUHIRO·Filed 2008·Granted May 8, 2012·11 cites·13 claims
- 1678US7064974B2Magnetic random access memory and method for manufacturing the sameNEC CORP·Filed 2003·Granted Jun 20, 2006·22 cites·13 claims
- 1776US8120950B2Semiconductor deviceFUKAMI SHUNSUKE·Filed 2009·Granted Feb 21, 2012·10 cites·14 claims
- 1876US7068536B2Magnetic random access memory, and production method thereforNEC CORP·Filed 2003·Granted Jun 27, 2006·23 cites·17 claims
- 1973US8174086B2Magnetoresistive element, and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted May 8, 2012·8 cites·14 claims
- 2072US8687414B2Magnetic memory element and magnetic random access memoryNAGAHARA KIYOKAZU·Filed 2009·Granted Apr 1, 2014·8 cites·18 claims
- 2170US8791534B2Magnetic memory device and magnetic memoryFUKAMI SHUNSUKE·Filed 2011·Granted Jul 29, 2014·4 cites·14 claims
- 2270US8592930B2Magnetic memory element, magnetic memory and initializing methodFUKAMI SHUNSUKE·Filed 2010·Granted Nov 26, 2013·4 cites·20 claims
- 2369US7582923B2Magnetic memory and manufacturing method for the sameNEC CORP·Filed 2005·Granted Sep 1, 2009·7 cites·10 claims
- 2466US8159872B2Magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Apr 17, 2012·8 cites·14 claims
- 2565US8363461B2Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memoryNEC CORP·Filed 2009·Granted Jan 29, 2013·5 cites·20 claims
- 2663US10170689B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Jan 1, 2019·1 cites·7 claims
- 2763US8625327B2Magnetic random access memory and initializing method for the sameSUZUKI TETSUHIRO·Filed 2009·Granted Jan 7, 2014·3 cites·8 claims
- 2863US8514616B2Magnetic memory element and magnetic memoryISHIWATA NOBUYUKI·Filed 2010·Granted Aug 20, 2013·3 cites·18 claims
- 2963US6084405ATransducer utilizing giant magnetoresistance effect and having a ferromagnetic layer pinned in a direction perpendicular to a direction of a signal magnetic fieldNEC CORP·Filed 1997·Granted Jul 4, 2000·24 cites·47 claims
- 3062US8884388B2Magnetic memory element, magnetic memory and manufacturing method of magnetic memoryFUKAMI SHUNSUKE·Filed 2011·Granted Nov 11, 2014·1 cites·15 claims
- 3160US8300456B2Magnetic random access memory and method of manufacturing the sameHONJOU HIROAKI·Filed 2007·Granted Oct 30, 2012·5 cites·8 claims
- 3260US8149615B2Magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Apr 3, 2012·4 cites·10 claims
- 3359US8729648B2Magnetic body device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2013·Granted May 20, 2014·2 cites·12 claims
- 3453US9837601B2Magnetic shield, semiconductor device, and semiconductor packageRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 5, 2017·0 cites·7 claims
- 3552US8994130B2Magnetic memory element and magnetic memoryFUKAMI SHUNSUKE·Filed 2010·Granted Mar 31, 2015·1 cites·16 claims
- 3651US10305024B2Semiconductor packageRENESAS ELECTRONICS CORP·Filed 2017·Granted May 28, 2019·0 cites·20 claims
- 3751US7894249B2Magnetoresistive element and magnetic random access memoryNEC CORP·Filed 2007·Granted Feb 22, 2011·2 cites·18 claims
- 3851US6134078AHigh sensitivity, low distortion yoke-type magnetoresistive headNEC CORP·Filed 1995·Granted Oct 17, 2000·9 cites·4 claims
- 3951US5790351AMagnetoresistive head with conductive underlayerNEC CORP·Filed 1996·Granted Aug 4, 1998·9 cites·26 claims
- 4050US8238135B2MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching regionSUZUKI TETSUHIRO·Filed 2008·Granted Aug 7, 2012·2 cites·9 claims
- 4150US2014346518A1Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy filmRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 4248US12022742B2Magnetic tunnel junction element and semiconductor deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted Jun 25, 2024·0 cites·20 claims
- 4348US8787076B2Magnetic memory and method of manufacturing the sameFUKAMI SHUNSUKE·Filed 2009·Granted Jul 22, 2014·1 cites·11 claims
- 4447US8565011B2Method of initializing magnetic memory elementFUKAMI SHUNSUKE·Filed 2009·Granted Oct 22, 2013·1 cites·15 claims
- 4543US6804088B1Thin film magnetic head, manufacturing method thereof and magnetic storageNEC CORP·Filed 1999·Granted Oct 12, 2004·6 cites·26 claims
- 4642US6154348AMagnetoresistive head and method of initialization having a non-planar anti-ferromagnetic layerNEC CORP·Filed 1998·Granted Nov 28, 2000·5 cites·20 claims
- 4740US7254054B2Magnetic random access memory and method for manufacturing the sameNEC CORP·Filed 2006·Granted Aug 7, 2007·0 cites·10 claims
- 4839US8537604B2Magnetoresistance element, MRAM, and initialization method for magnetoresistance elementSUZUKI TETSUHIRO·Filed 2009·Granted Sep 17, 2013·0 cites·19 claims
- 4938US10586578B2Storage device, information processing apparatus, and storage device control methodSONY CORP·Filed 2017·Granted Mar 10, 2020·0 cites·20 claims
- 5031US7916520B2Memory cell and magnetic random access memoryNEC CORP·Filed 2005·Granted Mar 29, 2011·0 cites·19 claims
Join the waitlist — get patent alerts
Get an alert when Tetsuhiro Suzuki files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →