Inventor · disambiguated record
Thierry Barge
Also filed as: BARGE THIERRY
26 granted patents·6 pending applications·525 citations·filing 1997–2024
96Inventor score
Files withSOITEC SILICON ON INSULATOR26COMMISSARIAT ENERGIE ATOMIQUE2SHINETSU HANDOTAI KK2BROEKAART MARCEL1SOUSBIE NICOLAS1
Top patents by PatentIndex Score
32 records- 0196US11711065B2Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave deviceSOITEC SILICON ON INSULATOR·Filed 2021·Granted Jul 25, 2023·5 cites·21 claims
- 0295US6596610B1Method for reclaiming delaminated wafer and reclaimed delaminated waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 22, 2003·108 cites·1 claims
- 0394US6335258B1Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate elementCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Jan 1, 2002·174 cites·11 claims
- 0491US7288418B2Process for treating substrates for the microelectronics industry, and substrates obtained by this processSOITEC SILICON ON INSULATOR·Filed 2006·Granted Oct 30, 2007·20 cites·20 claims
- 0589US7406994B2Substrate layer cutting device and methodSOITEC SILICON ON INSULATOR·Filed 2007·Granted Aug 5, 2008·17 cites·19 claims
- 0689US6403450B1Heat treatment method for semiconductor substratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Jun 11, 2002·101 cites·21 claims
- 0784US10608610B2Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave deviceSOITEC SILICON ON INSULATOR·Filed 2016·Granted Mar 31, 2020·3 cites·18 claims
- 0883US12272540B2Method for manufacturing a substrateSOITEC SILICON ON INSULATOR·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 0983US7029993B1Method for treating substrates for microelectronics and substrates obtained according to said methodSOITEC SILICON ON INSULATOR·Filed 2000·Granted Apr 18, 2006·31 cites·22 claims
- 1081US12143093B2Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave deviceSOITEC SILICON ON INSULATOR·Filed 2023·Granted Nov 12, 2024·0 cites·14 claims
- 1180US10924081B2Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave deviceSOITEC SILICON ON INSULATOR·Filed 2020·Granted Feb 16, 2021·1 cites·30 claims
- 1280US6720640B2Method for reclaiming delaminated wafer and reclaimed delaminated waferSHINETSU HANDOTAI KK·Filed 2003·Granted Apr 13, 2004·25 cites·12 claims
- 1379US6902988B2Method for treating substrates for microelectronics and substrates obtained by said methodSOITEC SILICON ON INSULATOR·Filed 2002·Granted Jun 7, 2005·20 cites·25 claims
- 1477US12278608B2Method for manufacturing a substrate for a radiofrequency deviceSOITEC SILICON ON INSULATOR·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 1574US8158487B2Annealing process for annealing a structureSOUSBIE NICOLAS·Filed 2011·Granted Apr 17, 2012·5 cites·13 claims
- 1673US2025081852A1Method for transferring a piezoelectric layer onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 1772US11870411B2Method for manufacturing a substrate for a radiofrequency deviceSOITEC SILICON ON INSULATOR·Filed 2019·Granted Jan 9, 2024·1 cites·19 claims
- 1872US7235427B2Method for treating substrates for microelectronics and substrates obtained by said methodSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jun 26, 2007·3 cites·15 claims
- 1971US2024213944A1Method for manufacturing a substrate for a radiofrequency filterSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 2070US11837463B2Method for manufacturing a substrateSOITEC SILICON ON INSULATOR·Filed 2020·Granted Dec 5, 2023·0 cites·20 claims
- 2166US7189304B2Substrate layer cutting device and methodSOITEC SILICON ON INSULATOR·Filed 2003·Granted Mar 13, 2007·10 cites·22 claims
- 2256US11979132B2Method for manufacturing a substrate for a radiofrequency filterSOITEC SILICON ON INSULATOR·Filed 2019·Granted May 7, 2024·0 cites·5 claims
- 2356US10943778B2Method for manufacturing a substrateSOITEC SILICON ON INSULATOR·Filed 2016·Granted Mar 9, 2021·0 cites·18 claims
- 2454US12167694B2Method for transferring a piezoelectric layer onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2019·Granted Dec 10, 2024·0 cites·20 claims
- 2553US2024178056A1Method for transferring a layer of a heterostructureSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 2652US8232130B2Process for assembling wafers by means of molecular adhesionBROEKAART MARCEL·Filed 2008·Granted Jul 31, 2012·0 cites·13 claims
- 2749US7648888B2Apparatus and method for splitting substratesSOITEC SILICON ON INSULATOR·Filed 2006·Granted Jan 19, 2010·0 cites·21 claims
- 2849US2025176430A1Method for producing a donor substrate for transferring a piezoelectric layer, and method for transferring a piezoelectric layer to a carrier substrateSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 2947US2025176431A1Method for producing a donor substrate for transferring a piezoelectric layer, and method for transferring a piezoelectric layer to a carrier substrateSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 3046US7017570B2Apparatus and method for splitting substratesSOITEC SILICON ON INSULATOR·Filed 2004·Granted Mar 28, 2006·1 cites·33 claims
- 3144US9812371B2Methods for reducing metal contamination on a surface of a sapphire substrate by plasma treatmentSOITEC SILICON ON INSULATOR·Filed 2016·Granted Nov 7, 2017·0 cites·20 claims
- 3239US2023291377A1Process for manufacturing a piezoelectric structure for a radiofrequency device which structure can be used to transfer a piezoelectric layer, and process for transferring such a piezoelectric layerSOITEC SILICON ON INSULATOR·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →