Inventor · disambiguated record
Thierry Baron
Also filed as: BARON THIERRY
20 granted patents·5 pending applications·177 citations·filing 1986–2022
93Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE13INFINEON TECHNOLOGIES AG2AISSOU KARIM1APPLIED MATERIALS INC1BUCKLEY JULIEN1
Top patents by PatentIndex Score
25 records- 0184US6724017B2Method for automatic organization of microstructures or nanostructures and related device obtainedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Apr 20, 2004·25 cites·26 claims
- 0282US6372536B1II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junctionOSRAM OPTO SEMICONDUCTORS & CO·Filed 2000·Granted Apr 16, 2002·73 cites·17 claims
- 0375US8535962B2Method for making a light-emitting microelectronic device with semi-conducting nanowires formed on a metal substrateGILET PHILIPPE·Filed 2007·Granted Sep 17, 2013·7 cites·16 claims
- 0473US6946369B2Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Sep 20, 2005·17 cites·23 claims
- 0570US8088674B2Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodesERNST THOMAS·Filed 2008·Granted Jan 3, 2012·4 cites·8 claims
- 0668US8940623B2Process for obtaining an array of nanodotsGAY GUILLAUME·Filed 2012·Granted Jan 27, 2015·4 cites·20 claims
- 0762US6147365AOptoelectronic semiconductor componentINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 14, 2000·26 cites·16 claims
- 0859US8252702B2Fabrication of a memory with two self-aligned independent gatesMOLAS GABRIEL·Filed 2011·Granted Aug 28, 2012·2 cites·12 claims
- 0958US9377684B2Thin films organized in nanodomains on the basis of copolymers having polysaccharide blocks for applications in nanotechnologyAISSOU KARIM·Filed 2011·Granted Jun 28, 2016·3 cites·19 claims
- 1056US9293322B2Optimized method for fabricating patterns of III-V semiconductor material on a semiconductor substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Mar 22, 2016·1 cites·17 claims
- 1154US7968398B2Method for producing a floating gate with an alternation of lines of first and second materialsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2009·Granted Jun 28, 2011·1 cites·5 claims
- 1247US11342180B2Process for epitaxying gallium selenide on a [111]-oriented silicon substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted May 24, 2022·0 cites·15 claims
- 1347US6285697B1Semiconductor laser componentINFINEON TECHNOLOGIES AG·Filed 1999·Granted Sep 4, 2001·14 cites·24 claims
- 1446US2024234126A1Method for preparing a microelectronic component comprising a layer with a basis of a iii-v materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1545US12338545B2Method for producing a layer of aluminum nitride (ALN) on a structure of silicon or III-V materialsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Jun 24, 2025·0 cites·18 claims
- 1645US11756787B2Process for the hetero-integration of a semiconductor material of interest on a silicon substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Sep 12, 2023·0 cites·16 claims
- 1743US2023290633A1Method for producing a dielectric layer on a structure made of materials iii-vCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 1841US12255066B2Method for producing non-contiguous metal oxide semiconductors, of uniform and controlled size and densityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Mar 18, 2025·0 cites·18 claims
- 1939US2007104888A1Method for the organised growth of nanostructuresCOMMINSSARIAT A L EN ATOMIQUE·Filed 2004·Application pending·0 cites
- 2036US9917153B2Method for producing a microelectronic deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Mar 13, 2018·0 cites·34 claims
- 2133US10692718B2Polycrystalline semiconductor nanostructured materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jun 23, 2020·0 cites·21 claims
- 2233US2018261454A9Semiconductor deviceAPPLIED MATERIALS INC·Filed 2016·Application pending·0 cites
- 2333US2013313525A1Nanowire-based Transistor, Method for Fabricating the Transistor, Semiconductor Component Incorporating the Transistor, Computer Program and Storage Medium Associated with the Fabrication MethodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Application pending·0 cites
- 2430US4635022AFuse cut-out cartridgeTELEMECANIQUE ELECTRIQUE·Filed 1986·Granted Jan 6, 1987·0 cites·16 claims
- 2528US8685819B2Method for the realization of a crossbar array of crossed conductive or semi-conductive access linesBUCKLEY JULIEN·Filed 2011·Granted Apr 1, 2014·0 cites·12 claims
Join the waitlist — get patent alerts
Get an alert when Thierry Baron files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →