Inventor · disambiguated record
Thomas E. Kazior
Also filed as: KAZIOR THOMAS · KAZIOR THOMAS E
27 granted patents·8 pending applications·540 citations·filing 1987–2023
96Inventor score
Top patents by PatentIndex Score
35 records- 0195US9478508B1Microwave integrated circuit (MMIC) damascene electrical interconnect for microwave energy transmissionRAYTHEON CO·Filed 2015·Granted Oct 25, 2016·19 cites·8 claims
- 0293US9231064B1Double heterojunction group III-nitride structuresRAYTHEON CO·Filed 2014·Granted Jan 5, 2016·18 cites·27 claims
- 0393US7902083B2Passivation layer for a circuit device and method of manufactureRAYTHEON CO·Filed 2010·Granted Mar 8, 2011·15 cites·35 claims
- 0491US5343071ASemiconductor structures having dual surface via holesRAYTHEON CO·Filed 1993·Granted Aug 30, 1994·146 cites·17 claims
- 0590US10224285B2Nitride structure having gold-free contact and methods for forming such structuresRAYTHEON CO·Filed 2017·Granted Mar 5, 2019·7 cites·4 claims
- 0690US10096550B2Nitride structure having gold-free contact and methods for forming such structuresRAYTHEON CO·Filed 2017·Granted Oct 9, 2018·7 cites·13 claims
- 0789US11754865B2Hetergenous integration and electro-optic modulation of III-nitride photonics on a silicon photonic platformRAYTHEON BBN TECHNOLOGIES CORP·Filed 2020·Granted Sep 12, 2023·2 cites·16 claims
- 0888US6175287B1Direct backside interconnect for multiple chip assembliesRAYTHEON CO·Filed 1997·Granted Jan 16, 2001·136 cites·20 claims
- 0987US7767589B2Passivation layer for a circuit device and method of manufactureRAYTHEON CO·Filed 2007·Granted Aug 3, 2010·13 cites·3 claims
- 1081US11515410B2Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structuresRAYTHEON CO·Filed 2020·Granted Nov 29, 2022·1 cites·16 claims
- 1178US7387958B2MMIC having back-side multi-layer signal routingRAYTHEON CO·Filed 2005·Granted Jun 17, 2008·7 cites·10 claims
- 1276US11177216B2Nitride structures having low capacitance gate contacts integrated with copper damascene structuresRAYTHEON CO·Filed 2018·Granted Nov 16, 2021·2 cites·34 claims
- 1376US8466555B2Gold-free ohmic contactsCHELAKARA RAM V·Filed 2011·Granted Jun 18, 2013·8 cites·11 claims
- 1476US4807022ASimultaneous formation of via hole and tub structures for GaAs monolithic microwave integrated circuitsRAYTHEON CO·Filed 1987·Granted Feb 21, 1989·50 cites·6 claims
- 1575US9761445B2Methods and structures for forming microstrip transmission lines on thin silicon carbide on insulator (SICOI) wafersRAYTHEON CO·Filed 2016·Granted Sep 12, 2017·2 cites·12 claims
- 1674US12271068B2Heterogeneous integration and electro-optic modulation of III-nitride photonics on a silicon photonic platformRAYTHEON BBN TECHNOLOGIES CORP·Filed 2023·Granted Apr 8, 2025·0 cites·6 claims
- 1773US11747704B2Integration of electronics with lithium niobate photonicsRAYTHEON BBN TECHNOLOGIES CORP·Filed 2022·Granted Sep 5, 2023·0 cites·12 claims
- 1873US2023408885A1Integration of electronics with lithium niobate photonicsRAYTHEON BBN TECHNOLOGIES CORP·Filed 2023·Application pending·0 cites
- 1971US8575666B2Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductorLAROCHE JEFFREY R·Filed 2011·Granted Nov 5, 2013·4 cites·10 claims
- 2068US11784248B2Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structuresRAYTHEON CO·Filed 2022·Granted Oct 10, 2023·0 cites·16 claims
- 2167US11340512B2Integration of electronics with Lithium Niobate photonicsRAYTHEON BBN TECHNOLOGIES CORP·Filed 2020·Granted May 24, 2022·0 cites·11 claims
- 2264US4794093ASelective backside plating of gaas monolithic microwave integrated circuitsRAYTHEON CO·Filed 1987·Granted Dec 27, 1988·32 cites·23 claims
- 2360US4970578ASelective backside plating of GaAs monolithic microwave integrated circuitsRAYTHEON CO·Filed 1988·Granted Nov 13, 1990·27 cites·6 claims
- 2458US11239326B2Electrode structure for field effect transistorRAYTHEON CO·Filed 2019·Granted Feb 1, 2022·0 cites·19 claims
- 2555US4968637AMethod of manufacture TiW alignment mark and implant maskRAYTHEON CO·Filed 1989·Granted Nov 6, 1990·22 cites·4 claims
- 2654US4927784ASimultaneous formation of via hole and tube structures for GaAs monolithic microwave integrated circuitsRAYTHEON CO·Filed 1988·Granted May 22, 1990·22 cites·33 claims
- 2754US2024061310A1Integration of electronics with lithium niobate photonicsRAYTHEON BBN TECHNOLOGIES CORP·Filed 2023·Application pending·0 cites
- 2852US10930742B2Wafer structure with mode suppressionRAYTHEON CO·Filed 2020·Granted Feb 23, 2021·0 cites·8 claims
- 2950US2019097001A1Electrode structure for field effect transistorRAYTHEON CO·Filed 2017·Application pending·0 cites
- 3047USRE44303EPassivation layer for a circuit device and method of manufactureBEDINGER JOHN·Filed 2012·Granted Jun 18, 2013·0 cites·3 claims
- 3143US2015059640A1Method for reducing growth of non-uniformities and autodoping during column iii-v growth into dielectric windowsRAYTHEON CO·Filed 2013·Application pending·0 cites
- 3242US2019165108A1Reconstituted wafer structureRAYTHEON CO·Filed 2017·Application pending·0 cites
- 3337US2006175631A1Monolithic integrated circuit having enhanced breakdown voltageRAYTHEON CO·Filed 2005·Application pending·0 cites
- 3436US2008308922A1Method for packaging semiconductors at a wafer levelZHANG YIWEN·Filed 2007·Application pending·0 cites
- 3534US2005258459A1Method for fabricating semiconductor devices having a substrate which includes group III-nitride materialHWANG KIUCHUL·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →