Inventor · disambiguated record
Thomas J. Licata
Also filed as: LICATA THOMAS · LICATA THOMAS J · LICATA THOMAS JOHN
25 granted patents·1,238 citations·filing 1993–2001
97Inventor score
Top patents by PatentIndex Score
25 records- 0195US5796166ATasin oxygen diffusion barrier in multilayer structuresIBM·Filed 1996·Granted Aug 18, 1998·122 cites·7 claims
- 0294US6080287AMethod and apparatus for ionized physical vapor depositionTOKYO ELECTRON LTD·Filed 1998·Granted Jun 27, 2000·121 cites·27 claims
- 0393US5885425AMethod for selective material deposition on one side of raised or recessed featuresIBM·Filed 1995·Granted Mar 23, 1999·88 cites·16 claims
- 0492US6197165B1Method and apparatus for ionized physical vapor depositionTOKYO ELECTRON LTD·Filed 1999·Granted Mar 6, 2001·101 cites·17 claims
- 0592US6117279AMethod and apparatus for increasing the metal ion fraction in ionized physical vapor depositionTOKYO ELECTRON LTD·Filed 1998·Granted Sep 12, 2000·151 cites·14 claims
- 0692US5800688AApparatus for ionized sputteringTOKYO ELECTRON LTD·Filed 1997·Granted Sep 1, 1998·89 cites·11 claims
- 0792US5576579ATasin oxygen diffusion barrier in multilayer structuresIBM·Filed 1995·Granted Nov 19, 1996·83 cites·4 claims
- 0890US5776823ATasin oxygen diffusion barrier in multilayer structuresIBM·Filed 1996·Granted Jul 7, 1998·67 cites·6 claims
- 0981US6132564AIn-situ pre-metallization clean and metallization of semiconductor wafersTOKYO ELECTRON LTD·Filed 1997·Granted Oct 17, 2000·62 cites·22 claims
- 1075US5466626AMicro mask comprising agglomerated materialIBM·Filed 1993·Granted Nov 14, 1995·50 cites·16 claims
- 1173US5401675AMethod of depositing conductors in high aspect ratio apertures using a collimatorFiled 1993·Granted Mar 28, 1995·49 cites·12 claims
- 1272US6508919B1Optimized liners for dual damascene metal wiringTOKYO ELECTRON LTD·Filed 2000·Granted Jan 21, 2003·19 cites·61 claims
- 1371US6224724B1Physical vapor processing of a surface with non-uniformity compensationTOKYO ELECTRON LTD·Filed 1998·Granted May 1, 2001·39 cites·35 claims
- 1468US5726498AWire shape conferring reduced crosstalk and formation methodsIBM·Filed 1995·Granted Mar 10, 1998·31 cites·6 claims
- 1567US5356837AMethod of making epitaxial cobalt silicide using a thin metal underlayerIBM·Filed 1993·Granted Oct 18, 1994·39 cites·34 claims
- 1659US6395095B1Process apparatus and method for improved plasma processing of a substrateTOKYO ELECTRON LTD·Filed 1999·Granted May 28, 2002·14 cites·15 claims
- 1755US5711858AProcess for depositing a conductive thin film upon an integrated circuit substrateIBM·Filed 1995·Granted Jan 27, 1998·20 cites·18 claims
- 1853US5766968AMicro mask comprising agglomerated materialIBM·Filed 1995·Granted Jun 16, 1998·17 cites·17 claims
- 1952US6730605B2Redistribution of copper deposited filmsTOKYO ELECTRON LTD·Filed 2001·Granted May 4, 2004·5 cites·43 claims
- 2050US6110824AWire shape conferring reduced crosstalk and formation methodsIBM·Filed 1997·Granted Aug 29, 2000·13 cites·12 claims
- 2148US6214720B1Plasma process enhancement through reduction of gaseous contaminantsTOKYO ELECTRON LTD·Filed 1999·Granted Apr 10, 2001·13 cites·27 claims
- 2248US5874201ADual damascene process having tapered viasIBM·Filed 1995·Granted Feb 23, 1999·17 cites·7 claims
- 2345US5757879ATungsten absorber for x-ray maskIBM·Filed 1996·Granted May 26, 1998·9 cites·14 claims
- 2443US5545590AConductive rie-resistant collars for studs beneath rie-defined wiresIBM·Filed 1994·Granted Aug 13, 1996·12 cites·8 claims
- 2538US6200894B1Method for enhancing aluminum interconnect propertiesIBM·Filed 1996·Granted Mar 13, 2001·7 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →