Inventor · disambiguated record
Thomas Macelwee
Also filed as: MACELWEE THOMAS · MACELWEE THOMAS W · MACELWEE THOMAS WILLIAM
24 granted patents·9 pending applications·318 citations·filing 1984–2023
95Inventor score
Files withGAN SYSTEMS INC10INFINEON TECH CANADA INC8GROUP IV SEMICONDUCTOR INC6NORTHERN TELECOM LTD4CALDER IAIN1
Top patents by PatentIndex Score
33 records- 0189US7679102B2Carbon passivation in solid-state light emittersGROUP IV SEMICONDUCTOR INC·Filed 2006·Granted Mar 16, 2010·32 cites·23 claims
- 0289US4651408AFabrication of stacked MOS devices utilizing lateral seeding and a plurality of separate implants at different energiesNORTHERN TELECOM LTD·Filed 1984·Granted Mar 24, 1987·79 cites·12 claims
- 0388US10283501B2GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereofGAN SYSTEMS INC·Filed 2017·Granted May 7, 2019·5 cites·16 claims
- 0485US5703980AMethod for low-loss insertion of an optical signal from an optical fibre to a waveguide integrated on to a semiconductor waferNORTHERN TELECOM·Filed 1996·Granted Dec 30, 1997·76 cites·31 claims
- 0584US10249506B2GaN-on-si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereofGAN SYSTEMS INC·Filed 2017·Granted Apr 2, 2019·4 cites·20 claims
- 0679US10796998B1Embedded packaging for high voltage, high temperature operation of power semiconductor devicesGAN SYSTEMS INC·Filed 2019·Granted Oct 6, 2020·2 cites·20 claims
- 0778US8089080B2Engineered structure for high brightness solid-state light emittersCALDER IAIN·Filed 2009·Granted Jan 3, 2012·10 cites·23 claims
- 0876US7888686B2Pixel structure for a solid state light emitting deviceGROUP IV SEMICONDUCTOR INC·Filed 2008·Granted Feb 15, 2011·7 cites·20 claims
- 0976US4680609AStructure and fabrication of vertically integrated CMOS logic gatesNORTHERN TELECOM LTD·Filed 1984·Granted Jul 14, 1987·27 cites·19 claims
- 1074US7616272B2Electroluminescent films for backlighting liquid crystal displaysGROUP IV SEMICONDUCTOR INC·Filed 2007·Granted Nov 10, 2009·4 cites·25 claims
- 1171US10985259B2GaN HEMT device structure and method of fabricationGAN SYSTEMS INC·Filed 2018·Granted Apr 20, 2021·1 cites·25 claims
- 1271US5296726AHigh value resistive load for an integrated circuitNORTHERN TELECOM LTD·Filed 1993·Granted Mar 22, 1994·34 cites·16 claims
- 1369US8198638B2Light emitting device structure and process for fabrication thereofMACELWEE THOMAS·Filed 2010·Granted Jun 12, 2012·3 cites·25 claims
- 1467US11676899B2Embedded packaging for high voltage, high temperature operation of power semiconductor devicesGAN SYSTEMS INC·Filed 2020·Granted Jun 13, 2023·0 cites·21 claims
- 1566US7839467B2Color Tuneable electroluminescent devicesGROUP IV SEMICONDUCTOR INC·Filed 2009·Granted Nov 23, 2010·2 cites·15 claims
- 1663US8093604B2Engineered structure for solid-state light emittersCHIK GEORGE·Filed 2006·Granted Jan 10, 2012·4 cites·31 claims
- 1763US7800117B2Pixel structure for a solid state light emitting deviceGROUP IV SEMICONDUCTOR INC·Filed 2006·Granted Sep 21, 2010·3 cites·23 claims
- 1862US7923925B2Light emitting device with a stopper layer structureGROUP IV SEMICONDUCTOR INC·Filed 2008·Granted Apr 12, 2011·3 cites·25 claims
- 1958USRE49603EGaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereofGAN SYSTEMS INC·Filed 2020·Granted Aug 8, 2023·0 cites·30 claims
- 2057US12385953B2Current sensing by using aging sense transistorINFINEON TECH CANADA INC·Filed 2023·Granted Aug 12, 2025·0 cites·19 claims
- 2157US8232611B2High quality gate dielectric for semiconductor devices and method of formation thereofMINER CARLA·Filed 2010·Granted Jul 31, 2012·2 cites·28 claims
- 2255US4804633ASilicon-on-insulator substrates annealed in polysilicon tubeNORTHERN TELECOM LTD·Filed 1988·Granted Feb 14, 1989·20 cites·10 claims
- 2354US2023080636A1Device structure for power semiconductor transistorGAN SYSTEMS INC·Filed 2022·Application pending·0 cites
- 2454US2025140674A1Multi-die packageINFINEON TECH CANADA INC·Filed 2023·Application pending·0 cites
- 2553US2025176260A1Common drain bidirectional switchINFINEON TECH CANADA INC·Filed 2023·Application pending·0 cites
- 2652US2025133818A1Hybrid enhancement/depletion gate structure for high electron mobility transistorINFINEON TECH CANADA INC·Filed 2023·Application pending·0 cites
- 2751US12382652B2Transistor structure using multiple two-dimensional channelsINFINEON TECH CANADA INC·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 2850US2024421196A1GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AND METHOD OF FABRICATIONGAN SYSTEMS INC·Filed 2023·Application pending·0 cites
- 2949US2021217884A1GaN HEMT DEVICE STRUCTURE AND METHOD OF FABRICATIONGAN SYSTEMS INC·Filed 2021·Application pending·0 cites
- 3047US2025133762A1Substrate biasing for a transistor structure that uses a two-dimensional electron gasINFINEON TECH CANADA INC·Filed 2023·Application pending·0 cites
- 3145US2024332368A1GaN SEMICONDUCTOR POWER TRANSISTORS WITH STEPPED METAL FIELD PLATES AND METHODS OF FABRICATIONGAN SYSTEMS INC·Filed 2023·Application pending·0 cites
- 3244US12352801B2Wafer testing for current property of a power transistorINFINEON TECH CANADA INC·Filed 2023·Granted Jul 8, 2025·0 cites·17 claims
- 3340US2025133837A1Monolithic structure for substrate biasing for a transistor that uses a two-dimensional electron gasINFINEON TECH CANADA INC·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →