Inventor · disambiguated record
Thierry Schwartzmann
Also filed as: SCHWARTZMANN THIERRY
9 granted patents·1 pending application·52 citations·filing 1999–2010
84Inventor score
Top patents by PatentIndex Score
10 records- 0175US6265275B1Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial baseST MICROELECTRONICS SA·Filed 1999·Granted Jul 24, 2001·38 cites·11 claims
- 0254US8168504B2Integrated circuit comprising a gradually doped bipolar transistor and corresponding fabrication processLENOBLE DAMIEN·Filed 2010·Granted May 1, 2012·1 cites·23 claims
- 0352US7714390B2Integrated circuit comprising a substrate and a resistorST MICROELECTRONICS SA·Filed 2006·Granted May 11, 2010·2 cites·14 claims
- 0451US6689672B2Buried layer manufacturing methodST MICROELECTRONICS SA·Filed 2001·Granted Feb 10, 2004·5 cites·24 claims
- 0550US6607960B2Bipolar transistor manufacturing methodST MICROELECTRONICS SA·Filed 2001·Granted Aug 19, 2003·4 cites·22 claims
- 0645US7705427B2Integrated circuit comprising a gradually doped bipolar transistorST MICROELECTRONICS SA·Filed 2006·Granted Apr 27, 2010·0 cites·20 claims
- 0743US6847094B2Contact structure on a deep region formed in a semiconductor substrateST MICROELECTRONICS SA·Filed 2002·Granted Jan 25, 2005·2 cites·23 claims
- 0838US6864542B2Bipolar transistor manufacturing methodST MICROELECTRONICS SA·Filed 2003·Granted Mar 8, 2005·0 cites·22 claims
- 0934US6800514B2Method of fabricating a MOS transistor with a drain extension and corresponding transistorST MICROELECTRONICS SA·Filed 2002·Granted Oct 5, 2004·0 cites·18 claims
- 1030US2002011649A1Fast bipolar transistorFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →