Inventor · disambiguated record
Thomas E. Spikes, Jr.
Also filed as: SPIKES JR THOMAS E · SPIKES THOMAS E · SPIKES THOMAS E JR
34 granted patents·864 citations·filing 1995–2002
98Inventor score
Top patents by PatentIndex Score
34 records- 0190US6048766AFlash memory device having high permittivity stacked dielectric and fabrication thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 11, 2000·91 cites·19 claims
- 0290US5981354ASemiconductor fabrication employing a flowable oxide to enhance planarization in a shallow trench isolation processADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 9, 1999·110 cites·11 claims
- 0386US6194283B1High density trench fill due to new spacer fill method including isotropically etching silicon nitride spacersADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 27, 2001·89 cites·9 claims
- 0481US5811334AWafer cleaning procedure useful in the manufacture of a non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 1995·Granted Sep 22, 1998·53 cites·11 claims
- 0577US6326251B1Method of making salicidation of source and drain regions with metal gate MOSFETADVANCED MICRO DEVICES INC·Filed 1999·Granted Dec 4, 2001·39 cites·34 claims
- 0677US6140163AMethod and apparatus for upper level substrate isolation integrated with bulk siliconADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 31, 2000·40 cites·20 claims
- 0772US6458678B1Transistor formed using a dual metal process for gate and source/drain regionADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 1, 2002·17 cites·12 claims
- 0871US5970375ASemiconductor fabrication employing a local interconnectADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 19, 1999·40 cites·13 claims
- 0970US6100204AMethod of making ultra thin gate oxide using aluminum oxideADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·28 cites·18 claims
- 1069US6114219AMethod of manufacturing an isolation region in a semiconductor device using a flowable oxide-generating materialADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 5, 2000·36 cites·20 claims
- 1169US5963810ASemiconductor device having nitrogen enhanced high permittivity gate insulating layer and fabrication thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 5, 1999·29 cites·20 claims
- 1268US6599174B1Eliminating dishing non-uniformity of a process layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 29, 2003·11 cites·34 claims
- 1366US6225201B1Ultra short transistor channel length dictated by the width of a sidewall spacerADVANCED MICRO DEVICES INC·Filed 1999·Granted May 1, 2001·24 cites·23 claims
- 1464US6171917B1Transistor sidewall spacers composed of silicon nitride CVD deposited from a high density plasma sourceADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 9, 2001·27 cites·13 claims
- 1564US5942787ASmall gate electrode MOSFETADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 24, 1999·30 cites·7 claims
- 1660US6124174ASpacer structure as transistor gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 26, 2000·20 cites·21 claims
- 1758US5923992AIntegrated circuit formed with shallow isolation structures having nitride placed on the trench dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 13, 1999·22 cites·9 claims
- 1857US6074904AMethod and structure for isolating semiconductor devices after transistor formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 13, 2000·23 cites·19 claims
- 1953US6160316AIntegrated circuit utilizing an air gap to reduce capacitance between adjacent metal linewidthsADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 12, 2000·18 cites·8 claims
- 2052US6309936B1Integrated formation of LDD and non-LDD semiconductor devicesADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 30, 2001·13 cites·25 claims
- 2152US5946581AMethod of manufacturing a semiconductor device by doping an active region after formation of a relatively thick oxide layerADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 31, 1999·17 cites·29 claims
- 2250US6211000B1Method of making high performance mosfets having high conductivity gate conductorsADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 3, 2001·12 cites·16 claims
- 2349US6064102ASemiconductor device having gate electrodes with different gate insulators and fabrication thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted May 16, 2000·11 cites·8 claims
- 2446US6271112B1Interlayer between titanium nitride and high density plasma oxideADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 7, 2001·12 cites·27 claims
- 2545US6037244AMethod of manufacturing a semiconductor device using advanced contact formationADVANCED MICRODEVICES INC·Filed 1997·Granted Mar 14, 2000·12 cites·31 claims
- 2643US6239476B1Integrated circuit isolation structure employing a protective layer and method for making sameADVANCED MICRO DEVICES INC·Filed 1998·Granted May 29, 2001·10 cites·16 claims
- 2740US6110785AFormulation of high performance transistors using gate trim etch processADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 29, 2000·6 cites·19 claims
- 2838US5904542APerforming a semiconductor fabrication sequence within a common chamber and without opening the chamber beginning with forming a field dielectric and concluding with a gate dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted May 18, 1999·7 cites·15 claims
- 2936US6555396B1Method and apparatus for enhancing endpoint detection of a via etchADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 29, 2003·0 cites·29 claims
- 3036US6228724B1Method of making high performance MOSFET with enhanced gate oxide integration and device formed therebyADVANCED MIRCO DEVICES·Filed 1999·Granted May 8, 2001·7 cites·12 claims
- 3136US5933747AMethod and structure for an advanced isolation spacer shellADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 3, 1999·5 cites·6 claims
- 3232US6140190AMethod and structure for elevated source/drain with polished gate electrode insulated gate field effect transistorsADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 31, 2000·1 cites·21 claims
- 3332US5929496AMethod and structure for channel length reduction in insulated gate field effect transistorsFiled 1997·Granted Jul 27, 1999·2 cites·9 claims
- 3432US5897358ASemiconductor device having fluorine-enhanced transistor with elevated active regions and fabrication thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 27, 1999·2 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →