Inventor · disambiguated record
Tien-Chen Chan
Also filed as: CHAN TIEN-CHEN
19 granted patents·6 pending applications·40 citations·filing 2014–2020
91Inventor score
Files withUNITED MICROELECTRONICS CORP25
Top patents by PatentIndex Score
25 records- 0193US10217750B1Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 26, 2019·9 cites·4 claims
- 0292US9397214B1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 19, 2016·10 cites·10 claims
- 0385US10497704B2Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 3, 2019·3 cites·9 claims
- 0483US9754938B1Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Sep 5, 2017·3 cites·8 claims
- 0583US9373705B1Manufacturing method of a fin-shaped field effect transistor and a device thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 21, 2016·3 cites·11 claims
- 0680US10608093B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 31, 2020·2 cites·10 claims
- 0779US10643997B2Semiconductor device with metal gatesUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 5, 2020·2 cites·5 claims
- 0878US9680022B1Semiconductor device having silicon-germanium layer on fin and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 13, 2017·2 cites·9 claims
- 0974US10056288B1Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 21, 2018·2 cites·7 claims
- 1071US9899498B2Semiconductor device having silicon-germanium layer on fin and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 20, 2018·1 cites·11 claims
- 1170US9214551B2Method for fabricating semiconductor device, and semiconductor device made therebyUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 15, 2015·2 cites·6 claims
- 1268US10608086B2Semiconductor structure with diffusion barrier region and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Mar 31, 2020·1 cites·17 claims
- 1360US11502180B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Nov 15, 2022·0 cites·6 claims
- 1459US10847517B2Method for forming semiconductor device having a multi-thickness gate trench dielectric layerUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 24, 2020·0 cites·8 claims
- 1555US10373958B2Semiconductor device having a multi-thickness gate trench dielectric layerUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 6, 2019·0 cites·9 claims
- 1654US9660086B2Fin-shaped field effect transistorUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 23, 2017·0 cites·9 claims
- 1749US10332889B2Method of manufacturing a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 25, 2019·0 cites·10 claims
- 1846US9966468B2Semiconductor device having reverse U-shaped epitaxial layer and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 8, 2018·0 cites·16 claims
- 1942US10056388B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 21, 2018·0 cites·9 claims
- 2041US2018226470A1Method of fabricating bottom electrodeUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 2138US2018211961A1Semiconductor memory device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 2237US2018197868A1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 2337US2018182760A1Dielectric structure and manufacturing method thereof and memory structureUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2436US2019013204A1Method of fabricating buried word line and gate on finfetUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2535US2018190661A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →