Inventor · disambiguated record
Timothy E. Glassman
Also filed as: GLASSMAN TIMOTHY · GLASSMAN TIMOTHY E · GORDON LEGAL REPRESENTATIVE CO · GORDON LEGAL REPRESENTATIVE CONNIE L
29 granted patents·7 pending applications·1,126 citations·filing 1994–2025
97Inventor score
Top patents by PatentIndex Score
36 records- 0196US7323581B1Source reagent compositions and method for forming metal films on a substrate by chemical vapor depositionADVANCED TECH MATERIALS·Filed 2000·Granted Jan 29, 2008·56 cites·8 claims
- 0296US6110529AMethod of forming metal films on a substrate by chemical vapor depositionADVANCED TECH MATERIALS·Filed 1995·Granted Aug 29, 2000·276 cites·38 claims
- 0396US5820664APrecursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising sameADVANCED TECH MATERIALS·Filed 1995·Granted Oct 13, 1998·266 cites·19 claims
- 0495US9754821B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2016·Granted Sep 5, 2017·9 cites·10 claims
- 0595US9330963B2Conformal low temperature hermetic dielectric diffusion barriersKING SEAN·Filed 2011·Granted May 3, 2016·23 cites·10 claims
- 0693US5698022ALanthanide/phosphorus precursor compositions for MOCVD of lanthanide/phosphorus oxide filmsADVANCED TECH MATERIALS·Filed 1996·Granted Dec 16, 1997·127 cites·23 claims
- 0792US6716707B1Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2003·Granted Apr 6, 2004·52 cites·4 claims
- 0891US6713358B1Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2002·Granted Mar 30, 2004·77 cites·3 claims
- 0991US5679815ATantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the sameADVANCED TECH MATERIALS·Filed 1994·Granted Oct 21, 1997·49 cites·15 claims
- 1090US12300537B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 1188US9691839B2Metal-insulator-metal (MIM) capacitor with insulator stack having a plurality of metal oxide layersLINDERT NICK·Filed 2011·Granted Jun 27, 2017·12 cites·37 claims
- 1287US9935002B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2017·Granted Apr 3, 2018·2 cites·20 claims
- 1387US6787440B2Method for making a semiconductor device having an ultra-thin high-k gate dielectricINTEL CORP·Filed 2002·Granted Sep 7, 2004·41 cites·13 claims
- 1486US12040226B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2023·Granted Jul 16, 2024·0 cites·10 claims
- 1585US2025285917A1Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2025·Application pending·0 cites
- 1683US11670545B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2022·Granted Jun 6, 2023·0 cites·20 claims
- 1781US5677002AChemical vapor deposition of tantalum- or niobium-containing coatingsADVANCED TECH MATERIALS·Filed 1995·Granted Oct 14, 1997·49 cites·20 claims
- 1880US11587827B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2022·Granted Feb 21, 2023·0 cites·25 claims
- 1980US11342499B2RRAM devices with reduced forming voltageINTEL CORP·Filed 2017·Granted May 24, 2022·4 cites·22 claims
- 2076US11251076B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 2172US10763161B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
- 2272US8441097B2Methods to form memory devices having a capacitor with a recessed electrodeSTEIGERWALD JOSEPH M·Filed 2009·Granted May 14, 2013·5 cites·12 claims
- 2372US8299286B2Source reagent compositions and method for forming metal films on a substrate by chemical vapor depositionGARDINER ROBIN A·Filed 2007·Granted Oct 30, 2012·2 cites·9 claims
- 2471US10529619B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2019·Granted Jan 7, 2020·0 cites·25 claims
- 2571US5902639AMethod of forming bismuth-containing films by using bismuth amide compoundsADVANCED TECH MATERIALS·Filed 1997·Granted May 11, 1999·33 cites·28 claims
- 2669US6001172AApparatus and method for the in-situ generation of dopantsADVANCED TECH MATERIALS·Filed 1997·Granted Dec 14, 1999·35 cites·37 claims
- 2768US10438844B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2018·Granted Oct 8, 2019·0 cites·20 claims
- 2844US2006045968A1Atomic layer deposition of high quality high-k transition metal and rare earth oxidesMETZ MATTHEW V·Filed 2004·Application pending·0 cites
- 2943US2004180523A1Method for making a semiconductor device having a high-k gate dielectricFiled 2004·Application pending·0 cites
- 3043US2011147851A1Method For Depositing Gate Metal For CMOS DevicesTHOMAS CHRISTOPHER D·Filed 2009·Application pending·0 cites
- 3142US11430948B2Resistive random access memory device with switching multi-layer stack and methods of fabricationINTEL CORP·Filed 2017·Granted Aug 30, 2022·0 cites·20 claims
- 3241US5972743APrecursor compositions for ion implantation of antimony and ion implantation process utilizing sameADVANCED TECH MATERIALS·Filed 1996·Granted Oct 26, 1999·8 cites·15 claims
- 3341US2006102079A1Reducing variability in delivery rates of solid state precursorsGLASSMAN TIMOTHY E·Filed 2004·Application pending·0 cites
- 3437US2014001598A1Atomic layer deposition (ald) of taalc for capacitor integrationLINDERT NICK·Filed 2011·Application pending·0 cites
- 3535US11489112B2Resistive random access memory device and methods of fabricationINTEL CORP·Filed 2017·Granted Nov 1, 2022·0 cites·25 claims
- 3632US2018130707A1Bottom-up fill (buf) of metal features for semiconductor structuresINTEL CORP·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Timothy E. Glassman files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →