Inventor · disambiguated record
Ting-Hung Hsu
Also filed as: HSU TING-HUNG
31 granted patents·2 pending applications·109 citations·filing 2013–2023
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD29TAIWAN SEMICONDUCTOR MFG3TAIWAN SEMICONDUCTOR MANUFACTORING COMPANY LTD1
Top patents by PatentIndex Score
33 records- 0197US9171843B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 27, 2015·23 cites·20 claims
- 0296US9443856B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·12 cites·20 claims
- 0396US9035277B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 19, 2015·21 cites·20 claims
- 0492US10388771B1Method and device for forming cut-metal-gate featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 20, 2019·5 cites·20 claims
- 0592US10269914B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·6 cites·20 claims
- 0692US9153668B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 6, 2015·9 cites·20 claims
- 0789US9935011B2Fin spacer protected source and drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 3, 2018·4 cites·20 claims
- 0889US9627385B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·4 cites·20 claims
- 0989US9147682B2Fin spacer protected source and drain regions in FinFETsTAIWAN SEMICONDUCTOR MANUFACTORING COMPANY LTD·Filed 2013·Granted Sep 29, 2015·10 cites·21 claims
- 1088US10930763B2Method and device for forming metal gate electrodes for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·3 cites·20 claims
- 1186US11075201B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·2 cites·20 claims
- 1284US10453842B2Tuning tensile strain on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 22, 2019·2 cites·20 claims
- 1384US2024096885A1Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1482US10679900B2Fin spacer protected source and drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
- 1581US9704861B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·2 cites·20 claims
- 1680US12205819B2Method and device for forming metal gate electrodes for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 1780US10833084B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·1 cites·20 claims
- 1878US10777554B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 15, 2020·1 cites·20 claims
- 1978US10374058B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 6, 2019·2 cites·20 claims
- 2077US11855168B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2175US11855087B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 2273US11557660B2Method and device for forming cut-metal-gate featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
- 2373US11205594B2Fin spacer protected source and drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 21, 2021·0 cites·20 claims
- 2472US11521858B2Method and device for forming metal gate electrodes for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·0 cites·8 claims
- 2568US11004847B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 2665US11309396B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 19, 2022·0 cites·20 claims
- 2765US10950713B2Method and device for forming cut-metal-gate featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·0 cites·20 claims
- 2865US10692865B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 23, 2020·0 cites·20 claims
- 2962US11133394B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
- 3061US10283508B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·0 cites·20 claims
- 3160US11152487B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·20 claims
- 3259US2025192104A1Semiconductor structure having alignment pattern and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3358US9847332B2Semiconductor device and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 19, 2017·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Ting-Hung Hsu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →