Inventor · disambiguated record
Ting-Hsiang Huang
Also filed as: HUANG TING-HSIANG
8 granted patents·3 pending applications·4 citations·filing 2007–2024
77Inventor score
Top patents by PatentIndex Score
11 records- 0189US2025107101A1Magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0288US12200947B2Magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jan 14, 2025·0 cites·7 claims
- 0382US11895847B2Magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2022·Granted Feb 6, 2024·0 cites·7 claims
- 0480US10985211B1Embedded MRAM structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 20, 2021·3 cites·10 claims
- 0570US11532666B2Magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2021·Granted Dec 20, 2022·0 cites·8 claims
- 0669US10991757B2Magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 27, 2021·1 cites·8 claims
- 0753US2023380148A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 0852US10700126B2Magnetoresistive random access memory wherein number of memory cells in each string is equal to number of strings connected in parallelUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 30, 2020·0 cites·19 claims
- 0951US10692928B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jun 23, 2020·0 cites·16 claims
- 1049US11271154B2Magnetic tunnel junction (MTJ) deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Mar 8, 2022·0 cites·10 claims
- 1147US2009009193A1Moisture-Sensitive Element with an Interdigital Capacitor and Fabrication thereofUNIV CHUNG YUAN CHRISTIAN·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →