Inventor · disambiguated record
Ting Li
Also filed as: LI TING · LI TING-PANG
20 granted patents·2 pending applications·450 citations·filing 2001–2023
95Inventor score
Top patents by PatentIndex Score
22 records- 0197US8034647B2LED with substrate modifications for enhanced light extraction and method of making sameCREE INC·Filed 2010·Granted Oct 11, 2011·34 cites·15 claims
- 0296US7915629B2Composite high reflectivity layerCREE INC·Filed 2008·Granted Mar 29, 2011·43 cites·51 claims
- 0395US8017963B2Light emitting diode with a dielectric mirror having a lateral configurationCREE INC·Filed 2008·Granted Sep 13, 2011·38 cites·33 claims
- 0493US8710536B2Composite high reflectivity layerCREE INC·Filed 2013·Granted Apr 29, 2014·14 cites·15 claims
- 0593US8680556B2Composite high reflectivity layerIBBETSON JAMES·Filed 2012·Granted Mar 25, 2014·19 cites·46 claims
- 0693US8598609B2Composite high reflectivity layerIBBETSON JAMES·Filed 2011·Granted Dec 3, 2013·15 cites·32 claims
- 0793US7534633B2LED with substrate modifications for enhanced light extraction and method of making sameCREE INC·Filed 2005·Granted May 19, 2009·21 cites·21 claims
- 0893US6972438B2Light emitting diode with porous SiC substrate and method for fabricatingCREE INC·Filed 2003·Granted Dec 6, 2005·74 cites·14 claims
- 0993US6444551B1N-type buried layer drive-in recipe to reduce pits over buried antimony layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 3, 2002·127 cites·44 claims
- 1092US7932106B2Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of formingCREE INC·Filed 2006·Granted Apr 26, 2011·28 cites·49 claims
- 1184US7508032B2High voltage device with low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 24, 2009·13 cites·18 claims
- 1283US9362459B2High reflectivity mirrors and method for making sameHEIKMAN STEN·Filed 2009·Granted Jun 7, 2016·13 cites·12 claims
- 1380US8617909B2LED with substrate modifications for enhanced light extraction and method of making sameBATRES MAX·Filed 2009·Granted Dec 31, 2013·6 cites·19 claims
- 1480US8507924B2Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of formingLI TING·Filed 2011·Granted Aug 13, 2013·4 cites·15 claims
- 1557US8384115B2Bond pad design for enhancing light extraction from LED chipsCREE INC·Filed 2008·Granted Feb 26, 2013·1 cites·12 claims
- 1655US2014203320A1Composite high reflectivity layerCREE INC·Filed 2014·Application pending·0 cites
- 1752US12368074B2Manufacturing method of semiconductor structure comprising a gap and semiconductor structure comprising a gapCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 22, 2025·0 cites·10 claims
- 1850US2023163025A1Method of forming semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 1948US10043942B2Vertical multi-junction light emitting diodeLUMINUS DEVICES INC·Filed 2014·Granted Aug 7, 2018·0 cites·20 claims
- 2045US8759868B2Ultra-thin ohmic contacts for p-type nitride light emitting devicesRAFFETTO MARK·Filed 2011·Granted Jun 24, 2014·0 cites·16 claims
- 2142US8089090B2Ultra-thin ohmic contacts for p-type nitride light emitting devicesRAFFETTO MARK·Filed 2005·Granted Jan 3, 2012·0 cites·20 claims
- 2242US7893490B2HVNMOS structure for reducing on-resistance and preventing BJT triggeringTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 22, 2011·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →