Inventor · disambiguated record
Tian-Hoe Lim
Also filed as: LIM TIAN H · LIM TIAN-HOE
19 granted patents·4,112 citations·filing 1999–2008
97Inventor score
Top patents by PatentIndex Score
19 records- 0199US7326657B2Post-deposition treatment to enhance properties of Si-O-C low k filmsAPPLIED MATERIALS INC·Filed 2004·Granted Feb 5, 2008·524 cites·9 claims
- 0299US6632478B2Process for forming a low dielectric constant carbon-containing filmAPPLIED MATERIALS INC·Filed 2001·Granted Oct 14, 2003·658 cites·46 claims
- 0398US6627532B1Method of decreasing the K value in SiOC layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2000·Granted Sep 30, 2003·358 cites·27 claims
- 0498US6602806B1Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide filmAPPLIED MATERIALS INC·Filed 2000·Granted Aug 5, 2003·549 cites·11 claims
- 0597US8143174B2Post-deposition treatment to enhance properties of Si-O-C low K filmsXIA LI-QUN·Filed 2008·Granted Mar 27, 2012·521 cites·17 claims
- 0697US6635575B1Methods and apparatus to enhance properties of Si-O-C low K filmsAPPLIED MATERIALS INC·Filed 2000·Granted Oct 21, 2003·150 cites·10 claims
- 0797US6566278B1Method for densification of CVD carbon-doped silicon oxide films through UV irradiationAPPLIED MATERIALS INC·Filed 2000·Granted May 20, 2003·647 cites·9 claims
- 0896US6465372B1Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashingAPPLIED MATERIALS INC·Filed 2000·Granted Oct 15, 2002·101 cites·15 claims
- 0996US6255222B1Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition processAPPLIED MATERIALS INC·Filed 1999·Granted Jul 3, 2001·157 cites·20 claims
- 1095US6614181B1UV radiation source for densification of CVD carbon-doped silicon oxide filmsAPPLIED MATERIALS INC·Filed 2000·Granted Sep 2, 2003·114 cites·6 claims
- 1195US6258735B1Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamberAPPLIED MATERIALS INC·Filed 2000·Granted Jul 10, 2001·84 cites·23 claims
- 1293US6486061B1Post-deposition treatment to enhance properties of Si-O-C low K filmsAPPLIED MATERIALS INC·Filed 2000·Granted Nov 26, 2002·83 cites·13 claims
- 1391US6784119B2Method of decreasing the K value in SIOC layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2003·Granted Aug 31, 2004·36 cites·20 claims
- 1490US6583497B2Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashingAPPLIED MATERIALS INC·Filed 2002·Granted Jun 24, 2003·46 cites·27 claims
- 1583US6858923B2Post-deposition treatment to enhance properties of Si-O-C low filmsAPPLIED MATERIALS INC·Filed 2002·Granted Feb 22, 2005·17 cites·10 claims
- 1683US6573196B1Method of depositing organosilicate layersAPPLIED MATERIALS INC·Filed 2000·Granted Jun 3, 2003·34 cites·55 claims
- 1773US7074708B2Method of decreasing the k value in sioc layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2004·Granted Jul 11, 2006·8 cites·20 claims
- 1873US6528116B1Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processesAPPLIED MATERIALS INC·Filed 2000·Granted Mar 4, 2003·15 cites·7 claims
- 1966US6899763B2Lid cooling mechanism and method for optimized deposition of low-K dielectric using TR methylsilane-ozone based processesAPPLIED MATERIALS INC·Filed 2002·Granted May 31, 2005·10 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →