Inventor · disambiguated record
Till Schlösser
Also filed as: SCHLOESSER TILL · SCHLOSSER TILL · SCHLÖSSER TILL
44 granted patents·6 pending applications·973 citations·filing 1998–2025
98Inventor score
Top patents by PatentIndex Score
50 records- 0198US6798000B2Field effect transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 28, 2004·251 cites·24 claims
- 0292US6939763B2DRAM cell arrangement with vertical MOS transistors, and method for its fabricationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 6, 2005·43 cites·13 claims
- 0392US6462979B2Integrated memory having memory cells with magnetoresistive storage effectINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 8, 2002·65 cites·6 claims
- 0492US6229169B1Memory cell configuration, method for fabricating it and methods for operating itINFINEON TECHNOLOGIES AG·Filed 1998·Granted May 8, 2001·100 cites·10 claims
- 0591US6421271B1MRAM configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 16, 2002·59 cites·6 claims
- 0688US7595262B2Manufacturing method for an integrated semiconductor structureQIMONDA AG·Filed 2006·Granted Sep 29, 2009·13 cites·12 claims
- 0788US6566193B2Method for producing a cell of a semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 20, 2003·38 cites·9 claims
- 0884US7368752B2DRAM memory cellINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 6, 2008·27 cites·13 claims
- 0982US6274453B1Memory cell configuration and production process thereforSIEMENS AG·Filed 1999·Granted Aug 14, 2001·43 cites·6 claims
- 1081US6798689B2Integrated memory with a configuration of non-volatile memory cells and method for fabricating and for operating the integrated memoryINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 28, 2004·29 cites·7 claims
- 1179US6576948B2Integrated circuit configuration and method for manufacturing itINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 10, 2003·20 cites·9 claims
- 1277US6258656B1Capacitor with high-ε dielectric or ferroelectric material based on the fin stack principle and production process using a negative moldSIEMENS AG·Filed 1999·Granted Jul 10, 2001·37 cites·10 claims
- 1376US6448600B1DRAM cell configuration and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 10, 2002·16 cites·20 claims
- 1473US7329916B2DRAM cell arrangement with vertical MOS transistorsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 12, 2008·3 cites·20 claims
- 1572US7268381B2Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between themINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 11, 2007·11 cites·17 claims
- 1672US6521935B2Mos transistor and dram cell configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 18, 2003·17 cites·8 claims
- 1771US6438022B2Memory cell configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 20, 2002·18 cites·7 claims
- 1869US6258658B1Memory cell configuration and corresponding fabrication methodINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 10, 2001·26 cites·16 claims
- 1968US6638812B2Method for producing a memory cell for a semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 28, 2003·11 cites·11 claims
- 2068US6504200B2DRAM cell configuration and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 7, 2003·11 cites·12 claims
- 2166US6916721B2Method for fabricating a trench capacitor with an insulation collarINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 12, 2005·11 cites·16 claims
- 2261US6538273B2Ferroelectric transistor and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 25, 2003·9 cites·10 claims
- 2360US6645822B2Method for manufacturing a semiconductor circuit systemINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 11, 2003·7 cites·51 claims
- 2459US6737689B1FEMFET device and method for producing sameINFINEON TECHNOLOGIES AG·Filed 1999·Granted May 18, 2004·18 cites·6 claims
- 2558US12490479B2Field effect transistor having a dielectric structureINFINEON TECHNOLOGIES AG·Filed 2023·Granted Dec 2, 2025·0 cites·22 claims
- 2658US6838724B2Transistor array and semiconductor memory configuration fabricated with the transistor arrayINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 4, 2005·9 cites·12 claims
- 2757US6399433B2Method for fabricating a memory cellINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 4, 2002·7 cites·10 claims
- 2857US2025380475A1Semiconductor device with a first isolation trench and a second isolation trench and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 2956US7030434B1Arrangement with image sensorsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 18, 2006·6 cites·12 claims
- 3056US6512259B1Capacitor with high-ε dielectric or ferroelectric material based on the fin stack principleINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 28, 2003·6 cites·3 claims
- 3156US6442065B1Method for operating a memory cell configuration having dynamic gain memory cellsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 27, 2002·9 cites·24 claims
- 3256US2025374593A1Field effect transistor having a trench gate structureINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 3355US6822916B2Read/write amplifier having vertical transistors for a DRAM memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 23, 2004·8 cites·24 claims
- 3454US6750098B2Integrated semiconductor memory and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 15, 2004·6 cites·11 claims
- 3554US6566187B1DRAM cell system and method for producing sameINFINEON TECHNOLOGIES AG·Filed 1999·Granted May 20, 2003·15 cites·10 claims
- 3653US7045855B2Semiconductor device and corresponding fabrication methodINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 16, 2006·4 cites·8 claims
- 3753US2024243130A1Semiconductor Die with a Vertical Power Transistor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 3852US6518613B2Memory cell configuration with capacitor on opposite surface of substrate and method for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 11, 2003·4 cites·6 claims
- 3950US6534820B2Integrated dynamic memory cell having a small area of extent, and a method for its productionINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 18, 2003·4 cites·16 claims
- 4049US6956260B2Integrated semiconductor memory with wordlines conductively connected to one another in pairsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 18, 2005·4 cites·10 claims
- 4149US6861688B2Line configuration for bit lines for contact-connecting at least one memory cell, semiconductor component with a line configuration and method for fabricating a line configurationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 1, 2005·3 cites·9 claims
- 4247US6566182B2DRAM memory cell for DRAM memory device and method for manufacturing itINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 20, 2003·3 cites·1 claims
- 4345US6873000B2Storage cell field and method of producing the sameINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 29, 2005·2 cites·9 claims
- 4441US7307865B2Integrated read-only memory, method for operating said read-only memory and corresponding production methodINFINEON TECHNOLOGIES AG·Filed 2003·Granted Dec 11, 2007·0 cites·38 claims
- 4538US2005153507A1Fabrication method for a trench capacitor with an insulation collarINFINEON TECHNOLOGIES AG·Filed 2004·Application pending·0 cites
- 4638US2005287772A1Process for producing a web of a semiconductor materialINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 4735US6642565B2Miniaturized capacitor with solid-state dielectric, in particular for integrated semiconductor memories, E.G. DRAMS, and method for fabricating such a capacitorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 4, 2003·0 cites·11 claims
- 4834US6608340B1Substrate assembly having a depression suitable for an integrated circuit configuration and method for its fabricationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 19, 2003·0 cites·4 claims
- 4934US6445609B2Integrated DRAM memory cell and DRAM memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 3, 2002·0 cites·16 claims
- 5032US2002025629A1Method of fabricating a capacitor structureSIEMENS AG·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →