Inventor · disambiguated record
Tianhong Yan
Also filed as: YAN TIANHONG
70 granted patents·4 pending applications·526 citations·filing 2006–2025
99Inventor score
Top patents by PatentIndex Score
74 records- 0199US11758727B2Three-dimensional vertical nor flash thin-film transistor stringsSUNRISE MEMORY CORP·Filed 2021·Granted Sep 12, 2023·5 cites·40 claims
- 0299US11398492B2Vertical thing-film transistor and application as bit-line connector for 3-dimensional memory arraysSUNRISE MEMORY CORP·Filed 2020·Granted Jul 26, 2022·9 cites·9 claims
- 0399US11049879B2Three-dimensional vertical NOR flash thin-film transistor stringsSUNRISE MEMORY CORP·Filed 2020·Granted Jun 29, 2021·10 cites·39 claims
- 0498US11910612B2Process for forming a vertical thin-film transistor that serves as a connector to a bit-line of a 3-dimensional memory arraySUNRISE MEMORY CORP·Filed 2022·Granted Feb 20, 2024·3 cites·8 claims
- 0598US9812204B1Ferroelectric memory cell without a plate lineAUCMOS TECH USA INC·Filed 2016·Granted Nov 7, 2017·58 cites·4 claims
- 0697US12073082B2High capacity memory circuit with low effective latencySUNRISE MEMORY CORP·Filed 2023·Granted Aug 27, 2024·4 cites·60 claims
- 0797US11675500B2High capacity memory circuit with low effective latencySUNRISE MEMORY CORP·Filed 2021·Granted Jun 13, 2023·7 cites·106 claims
- 0897US8351236B2Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architectureSANDISK 3D LLC·Filed 2010·Granted Jan 8, 2013·26 cites·18 claims
- 0997US7869258B2Reverse set with current limit for non-volatile storageSANDISK 3D LLC·Filed 2008·Granted Jan 11, 2011·54 cites·26 claims
- 1096US9899085B1Non-volatile FeSRAM cell capable of non-destructive read operationsAUCMOS TECH USA INC·Filed 2016·Granted Feb 20, 2018·23 cites·8 claims
- 1195US10134469B1Read operation with data latch and signal termination for 1TNR memory arrayCROSSBAR INC·Filed 2017·Granted Nov 20, 2018·16 cites·20 claims
- 1295US9455301B2Setting channel voltages of adjustable resistance bit line structures using dummy word linesSANDISK 3D LLC·Filed 2015·Granted Sep 27, 2016·9 cites·18 claims
- 1395US8027209B2Continuous programming of non-volatile memorySANDISK 3D LLC·Filed 2009·Granted Sep 27, 2011·30 cites·33 claims
- 1494US9721653B2Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architectureSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 1, 2017·8 cites·17 claims
- 1594US8824191B2Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereofSANDISK 3D LLC·Filed 2013·Granted Sep 2, 2014·16 cites·19 claims
- 1692US9373396B2Side wall bit line structuresSANDISK 3D LLC·Filed 2015·Granted Jun 21, 2016·6 cites·18 claims
- 1792US9312002B2Methods for programming ReRAM devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 12, 2016·15 cites·16 claims
- 1892US8238174B2Continuous programming of non-volatile memoryYAN TIANHONG·Filed 2011·Granted Aug 7, 2012·12 cites·22 claims
- 1990US9659642B1State change detection for two-terminal memory during application of a state-changing stimulusCROSSBAR INC·Filed 2015·Granted May 23, 2017·11 cites·20 claims
- 2089US8059447B2Capacitive discharge method for writing to non-volatile memorySCHEUERLEIN ROY E·Filed 2008·Granted Nov 15, 2011·17 cites·25 claims
- 2188US9318194B1Apparatus and methods for sensing hard bit and soft bitsSANDISK 3D LLC·Filed 2014·Granted Apr 19, 2016·9 cites·17 claims
- 2288US9240235B2Mitigating disturb effects for non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2013·Granted Jan 19, 2016·11 cites·38 claims
- 2388US9165649B2Systems and methods of shaping dataSANDISK TECHNOLOGIES INC·Filed 2013·Granted Oct 20, 2015·10 cites·30 claims
- 2487US8098511B2Reverse set with current limit for non-volatile storageSCHEUERLEIN ROY E·Filed 2010·Granted Jan 17, 2012·9 cites·23 claims
- 2586US12411606B2High capacity memory circuit with low effective latencySUNRISE MEMORY CORP·Filed 2024·Granted Sep 9, 2025·0 cites·73 claims
- 2686US12324159B2Vertical thin-film transistor and application as bit-line connector for 3-dimensional memory arraysSUNRISE MEMORY CORP·Filed 2024·Granted Jun 3, 2025·0 cites·16 claims
- 2786US9583183B2Reading resistive random access memory based on leakage currentSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 28, 2017·9 cites·36 claims
- 2885US9123392B1Non-volatile 3D memory with cell-selectable word line decodingSANDISK 3D LLC·Filed 2014·Granted Sep 1, 2015·9 cites·20 claims
- 2984US12245430B2Three-dimensional vertical nor flash thin-film transistor stringsSUNRISE MEMORY CORP·Filed 2023·Granted Mar 4, 2025·0 cites·42 claims
- 3084US8526237B2Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereofSAMACHISA GEORGE·Filed 2011·Granted Sep 3, 2013·8 cites·10 claims
- 3184US2025240970A1Vertical thin-film transistor and application as bit-line connector for 3-dimensional memory arraysSUNRISE MEMORY CORP·Filed 2025·Application pending·0 cites
- 3283US8374051B2Three dimensional memory system with column pipelineSANDISK 3D LLC·Filed 2011·Granted Feb 12, 2013·9 cites·24 claims
- 3383US8111539B2Smart detection circuit for writing to non-volatile storageFASOLI LUCA G·Filed 2008·Granted Feb 7, 2012·16 cites·21 claims
- 3482US9484089B2Dual polarity read operationSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 1, 2016·7 cites·20 claims
- 3582US9236122B2Shared-gate vertical-TFT for vertical bit line arraySANDISK 3D LLC·Filed 2014·Granted Jan 12, 2016·6 cites·28 claims
- 3682US8130528B2Memory system with sectional data linesYAN TIANHONG·Filed 2009·Granted Mar 6, 2012·9 cites·19 claims
- 3781US10475511B1Read operation with data latch and signal termination for 1TNR memory arrayCROSSBAR INC·Filed 2018·Granted Nov 12, 2019·4 cites·9 claims
- 3881US8848415B2Three dimensional non-volatile storage with multi block row selectionSCHEUERLEIN ROY E·Filed 2011·Granted Sep 30, 2014·2 cites·19 claims
- 3980US7542370B2Reversible polarity decoder circuitSANDISK 3D LLC·Filed 2006·Granted Jun 2, 2009·12 cites·43 claims
- 4079US9202566B2Vertical cross point reram forming methodSANDISK 3D LLC·Filed 2014·Granted Dec 1, 2015·4 cites·20 claims
- 4179US9196362B2Multiple layer forming scheme for vertical cross point reramSANDISK 3D LLC·Filed 2014·Granted Nov 24, 2015·4 cites·25 claims
- 4278US9472280B2Vertical cross point reram forming methodSANDISK 3D LLC·Filed 2015·Granted Oct 18, 2016·3 cites·20 claims
- 4377US8553476B2Three dimensional memory system with page of data across word linesYAN TIANHONG·Filed 2011·Granted Oct 8, 2013·6 cites·20 claims
- 4475US8780605B2Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architectureSANDISK 3D LLC·Filed 2013·Granted Jul 15, 2014·2 cites·18 claims
- 4575US8310892B2Capacitive discharge method for writing to non-volatile memorySCHEUERLEIN ROY E·Filed 2011·Granted Nov 13, 2012·4 cites·20 claims
- 4673US10854634B2Three-dimensional vertical NOR flash thin-film transistor stringsSUNRISE MEMORY CORP·Filed 2020·Granted Dec 1, 2020·0 cites·27 claims
- 4772US8699293B2Non-volatile storage system with dual block programmingYAN TIANHONG·Filed 2011·Granted Apr 15, 2014·4 cites·20 claims
- 4871US9442663B2Independent set/reset programming schemeSANDISK 3D LLC·Filed 2014·Granted Sep 13, 2016·2 cites·20 claims
- 4971US8780651B2Continuous programming of non-volatile memoryYAN TIANHONG·Filed 2012·Granted Jul 15, 2014·3 cites·18 claims
- 5070US9484093B2Controlling adjustable resistance bit lines connected to word line combsSANDISK 3D LLC·Filed 2015·Granted Nov 1, 2016·1 cites·20 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →