Inventor · disambiguated record
Toshihiko Iinuma
Also filed as: IINUMA TOSHIHIKO
38 granted patents·10 pending applications·1,142 citations·filing 1994–2016
98Inventor score
Top patents by PatentIndex Score
48 records- 0199US10147736B2Semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2015·Granted Dec 4, 2018·77 cites·9 claims
- 0299US6054355AMethod of manufacturing a semiconductor device which includes forming a dummy gateTOSHIBA KK·Filed 1998·Granted Apr 25, 2000·338 cites·23 claims
- 0397US6376888B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2000·Granted Apr 23, 2002·175 cites·8 claims
- 0495US6515338B1Semiconductor device and manufacturing method thereforTOSHIBA KK·Filed 2000·Granted Feb 4, 2003·82 cites·17 claims
- 0593US6664592B2Semiconductor device with groove type channel structureTOSHIBA KK·Filed 2002·Granted Dec 16, 2003·60 cites·2 claims
- 0692US8633535B2Nonvolatile semiconductor memoryMATSUO KOUJI·Filed 2011·Granted Jan 21, 2014·16 cites·20 claims
- 0791US7372108B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted May 13, 2008·18 cites·9 claims
- 0891US6570217B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted May 27, 2003·96 cites·16 claims
- 0990US7091114B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Aug 15, 2006·38 cites·19 claims
- 1089US9412754B1Semiconductor memory device and production method thereofTOSHIBA KK·Filed 2015·Granted Aug 9, 2016·6 cites·15 claims
- 1188US5989988ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Nov 23, 1999·76 cites·8 claims
- 1283US9613979B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2016·Granted Apr 4, 2017·4 cites·6 claims
- 1382US6465823B1Dynamic threshold voltage metal insulator semiconductor effect transistorTOSHIBA KK·Filed 2000·Granted Oct 15, 2002·26 cites·5 claims
- 1480US6924518B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Aug 2, 2005·27 cites·22 claims
- 1576US9153656B2NAND type nonvolatile semiconductor memory device and method for manufacturing sameTOSHIBA KK·Filed 2013·Granted Oct 6, 2015·4 cites·9 claims
- 1675US8569825B2Nonvolatile semiconductor storage deviceIINUMA TOSHIHIKO·Filed 2010·Granted Oct 29, 2013·6 cites·6 claims
- 1775US7741220B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Jun 22, 2010·5 cites·10 claims
- 1873US9837430B2Semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2015·Granted Dec 5, 2017·2 cites·18 claims
- 1973US8101974B2Semiconductor device and manufacturing method thereofOHNO HIROSHI·Filed 2008·Granted Jan 24, 2012·5 cites·20 claims
- 2073US7902030B2Manufacturing method for semiconductor device and semiconductor deviceTOSHIBA KK·Filed 2009·Granted Mar 8, 2011·3 cites·9 claims
- 2170US6893928B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted May 17, 2005·10 cites·4 claims
- 2269US5510647ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1994·Granted Apr 23, 1996·26 cites·6 claims
- 2366US8766350B2Semiconductor device and method for fabricating semiconductor deviceARISUMI OSAMU·Filed 2012·Granted Jul 1, 2014·2 cites·11 claims
- 2465US6794720B2Dynamic threshold voltage metal insulator field effect transistorTOSHIBA KK·Filed 2002·Granted Sep 21, 2004·10 cites·4 claims
- 2564US9773712B2Ion implantation apparatus and semiconductor manufacturing methodTOSHIBA MEMORY CORP·Filed 2015·Granted Sep 26, 2017·1 cites·15 claims
- 2662US7495293B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2006·Granted Feb 24, 2009·2 cites·12 claims
- 2761US7078345B2Method for manufacturing a semiconductor deviceTOSHIBA KK·Filed 2003·Granted Jul 18, 2006·9 cites·19 claims
- 2861US6770942B2Semiconductor device having silicide film formed in a part of source-drain diffusion layers and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Aug 3, 2004·8 cites·13 claims
- 2958US2010055859A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Application pending·0 cites
- 3052US2006273392A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Application pending·0 cites
- 3150US8148717B2Manufacturing method for semiconductor device and semiconductor deviceITO TAKAYUKI·Filed 2011·Granted Apr 3, 2012·0 cites·7 claims
- 3250US7242064B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Jul 10, 2007·4 cites·7 claims
- 3345US7825433B2MIS-type semiconductor deviceTOSHIBA KK·Filed 2007·Granted Nov 2, 2010·0 cites·9 claims
- 3444US7964906B2Semiconductor device and method of manufacturing sameTOSHIBA KK·Filed 2007·Granted Jun 21, 2011·0 cites·8 claims
- 3543US7768094B2Semiconductor integrated circuit and wafer having diffusion regions differing in thickness and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Aug 3, 2010·0 cites·10 claims
- 3643US7557040B2Method of manufacture of semiconductor deviceTOSHIBA KK·Filed 2006·Granted Jul 7, 2009·0 cites·15 claims
- 3743US7049222B2Semiconductor device having silicide film formed in a part of source-drain diffusion layers and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted May 23, 2006·1 cites·9 claims
- 3840US2009065844A1Nonvolatile semiconductor memory device and manufacturing method thereofIINUMA TOSHIHIKO·Filed 2008·Application pending·0 cites
- 3940US2007085131A1Semiconductor deviceMATSUO KOUJI·Filed 2006·Application pending·0 cites
- 4039US5637909ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1996·Granted Jun 10, 1997·5 cites·5 claims
- 4138US9240494B2Semiconductor device and method for fabricating semiconductor deviceARISUMI OSAMU·Filed 2012·Granted Jan 19, 2016·0 cites·9 claims
- 4236US9660076B2Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted May 23, 2017·0 cites·14 claims
- 4336US2016268267A1Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Application pending·0 cites
- 4434US2006073663A1Method of manufacturing semiconductor deviceIINUMA TOSHIHIKO·Filed 2005·Application pending·0 cites
- 4534US2004113209A1MOSFET formed by using salicide process and method of manufacturing the sameFiled 2003·Application pending·0 cites
- 4633US2006006466A1Semiconductor device and method of manufacturing the sameIINUMA TOSHIHIKO·Filed 2005·Application pending·0 cites
- 4733US2016268292A1Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Application pending·0 cites
- 4833US2016365445A1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Toshihiko Iinuma files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →