Inventor · disambiguated record
Toru Kaga
Also filed as: KAGA TORU
42 granted patents·4 pending applications·2,044 citations·filing 1984–2008
99Inventor score
Top patents by PatentIndex Score
46 records- 0199US5106775AProcess for manufacturing vertical dynamic random access memoriesHITACHI LTD·Filed 1990·Granted Apr 21, 1992·507 cites·10 claims
- 0297US5177576ADynamic random access memory having trench capacitors and vertical transistorsHITACHI LTD·Filed 1991·Granted Jan 5, 1993·174 cites·20 claims
- 0396US7385197B2Electron beam apparatus and a device manufacturing method using the same apparatusEBARA CORP·Filed 2005·Granted Jun 10, 2008·30 cites·5 claims
- 0494US5196910ASemiconductor memory device with recessed array regionHITACHI LTD·Filed 1991·Granted Mar 23, 1993·108 cites·21 claims
- 0592US5466621AMethod of manufacturing a semiconductor device having silicon islandsHITACHI LTD·Filed 1993·Granted Nov 14, 1995·137 cites·20 claims
- 0692US5194749ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1992·Granted Mar 16, 1993·74 cites·37 claims
- 0792US4882289AMethod of making a semiconductor memory device with recessed array regionHITACHI LTD·Filed 1988·Granted Nov 21, 1989·85 cites·7 claims
- 0891US5140389ASemiconductor memory device having stacked capacitor cellsHITACHI LTD·Filed 1990·Granted Aug 18, 1992·74 cites·23 claims
- 0990US5483083ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1993·Granted Jan 9, 1996·60 cites·17 claims
- 1090US4918502ASemiconductor memory having trench capacitor formed with sheath electrodeHITACHI LTD·Filed 1987·Granted Apr 17, 1990·70 cites·25 claims
- 1189US4656607AElectrically erasable programmable RAMHITACHI LTD·Filed 1984·Granted Apr 7, 1987·49 cites·11 claims
- 1288US4633438AStacked semiconductor memoryHITACHI LTD·Filed 1984·Granted Dec 30, 1986·48 cites·10 claims
- 1386US5346834AMethod for manufacturing a semiconductor device and a semiconductor memory deviceHITACHI LTD·Filed 1992·Granted Sep 13, 1994·89 cites·1 claims
- 1485US5115289ASemiconductor device and semiconductor memory deviceHITACHI LTD·Filed 1991·Granted May 19, 1992·93 cites·25 claims
- 1583US5202275ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1990·Granted Apr 13, 1993·43 cites·23 claims
- 1683US4873560ADynamic random access memory having buried word linesHITACHI LTD·Filed 1988·Granted Oct 10, 1989·50 cites·42 claims
- 1779US5780882ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1995·Granted Jul 14, 1998·33 cites·8 claims
- 1876US6548847B2Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal filmHITACHI LTD·Filed 2001·Granted Apr 15, 2003·12 cites·33 claims
- 1975US5349218ASemiconductor integrated circuit device including memory cells having a structure effective in suppression of leak currentHITACHI LTD·Filed 1992·Granted Sep 20, 1994·36 cites·21 claims
- 2073US5331191ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1992·Granted Jul 19, 1994·24 cites·11 claims
- 2170US4967247AVertical dynamic random access memoryHITACHI LTD·Filed 1988·Granted Oct 30, 1990·29 cites·27 claims
- 2270US4668970ASemiconductor deviceHITACHI LTD·Filed 1985·Granted May 26, 1987·27 cites·5 claims
- 2362US6894334B2Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI VLSI ENG·Filed 2003·Granted May 17, 2005·5 cites·33 claims
- 2461US6169324B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 2, 2001·13 cites·19 claims
- 2561US5739589ASemiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1996·Granted Apr 14, 1998·13 cites·21 claims
- 2660US9194826B2Electron beam apparatus and sample observation method using the sameKAGA TORU·Filed 2008·Granted Nov 24, 2015·1 cites·10 claims
- 2760US5700705ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1995·Granted Dec 23, 1997·17 cites·31 claims
- 2860US5200635ASemiconductor device having a low-resistivity planar wiring structureHITACHI LTD·Filed 1991·Granted Apr 6, 1993·20 cites·5 claims
- 2959USRE38296ESemiconductor memory device with recessed array regionHITACHI LTD·Filed 1995·Granted Nov 4, 2003·17 cites·44 claims
- 3058US5012310ASemiconductor memory having stacked capacitorHITACHI LTD·Filed 1990·Granted Apr 30, 1991·19 cites·20 claims
- 3155US2009212213A1Projection electron beam apparatus and defect inspection system using the apparatusEBARA CORP·Filed 2006·Application pending·0 cites
- 3252US5583358ASemiconductor memory device having stacked capacitorsHITACHI LTD·Filed 1994·Granted Dec 10, 1996·11 cites·12 claims
- 3352US5374576AMethod of fabricating stacked capacitor cell memory devicesHITACHI LTD·Filed 1993·Granted Dec 20, 1994·11 cites·8 claims
- 3451US6342412B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 29, 2002·8 cites·19 claims
- 3550US6127255ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1997·Granted Oct 3, 2000·8 cites·12 claims
- 3650US5811316AMethod of forming teos oxide and silicon nitride passivation layer on aluminum wiringHITACHI LTD·Filed 1995·Granted Sep 22, 1998·8 cites·13 claims
- 3749US5619055ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1995·Granted Apr 8, 1997·10 cites·18 claims
- 3847US5557147ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1994·Granted Sep 17, 1996·7 cites·18 claims
- 3947US2009014649A1Electron beam apparatusEBARA CORP·Filed 2006·Application pending·0 cites
- 4045US4873203AMethod for formation of insulation film on silicon buried in trenchHITACHI LTD·Filed 1988·Granted Oct 10, 1989·12 cites·20 claims
- 4144US6878586B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2003·Granted Apr 12, 2005·1 cites·18 claims
- 4243US5591998ASemiconductor memory deviceHITACHI LTD·Filed 1995·Granted Jan 7, 1997·6 cites·22 claims
- 4343US2009152595A1Semiconductor devices and method of testing sameEBARA CORP·Filed 2006·Application pending·0 cites
- 4437US2001008288A1Semiconductor integrated circuit device having memory cellsHITACHI LTD·Filed 2000·Application pending·0 cites
- 4534US5523965ASemiconductor memory device and method of manufacturing sameHITACHI LTD·Filed 1994·Granted Jun 4, 1996·4 cites·19 claims
- 4631US5646423ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1995·Granted Jul 8, 1997·1 cites·30 claims
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