Inventor · disambiguated record
Toshihide Kikkawa
Also filed as: KIKKAWA TOSHIHIDE
87 granted patents·13 pending applications·903 citations·filing 1991–2017
99Inventor score
Top patents by PatentIndex Score
100 records- 0197US9818840B2Semiconductor device and manufacturing method of semiconductor deviceTRANSPHORM JAPAN INC·Filed 2017·Granted Nov 14, 2017·15 cites·20 claims
- 0297US6121153ASemiconductor device having a regrowth crystal regionFUJITSU LTD·Filed 1998·Granted Sep 19, 2000·171 cites·7 claims
- 0396US9640648B2Semiconductor device and manufacturing method of semiconductor deviceTRANSPHORM JAPAN INC·Filed 2016·Granted May 2, 2017·12 cites·11 claims
- 0496US9299822B2Semiconductor device and manufacturing method of semiconductor deviceTRANSPHORM JAPAN INC·Filed 2013·Granted Mar 29, 2016·18 cites·10 claims
- 0596US8933489B2Compound semiconductor device and manufacturing method of the sameTRANSPHORM JAPAN INC·Filed 2013·Granted Jan 13, 2015·26 cites·12 claims
- 0695US7859020B2Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifierFUJITSU LTD·Filed 2008·Granted Dec 28, 2010·31 cites·11 claims
- 0793US7795622B2Compound semiconductor deviceFUJITSU LTD·Filed 2008·Granted Sep 14, 2010·25 cites·17 claims
- 0891US7638819B2Compound semiconductor device and the fabricating method of the sameFUJITSU LTD·Filed 2005·Granted Dec 29, 2009·15 cites·7 claims
- 0990US9142658B2Compound semiconductor device and method of manufacturing the sameTRANSPHORM JAPAN INC·Filed 2013·Granted Sep 22, 2015·13 cites·8 claims
- 1090US5460654AApparatus for generating raw material gas used in apparatus for growing thin filmFUJITSU LTD·Filed 1993·Granted Oct 24, 1995·76 cites·18 claims
- 1189US9536967B2Recessed ohmic contacts in a III-N deviceTRANSPHORM INC·Filed 2014·Granted Jan 3, 2017·15 cites·24 claims
- 1289US8294181B2Compound semiconductor device and method of manufacturing the sameKIKKAWA TOSHIHIDE·Filed 2010·Granted Oct 23, 2012·10 cites·12 claims
- 1389US7494855B2Compound semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2005·Granted Feb 24, 2009·11 cites·7 claims
- 1488US8912571B2Compound semiconductor device including first film on compound semiconductor layer and second film on first film and method of manufacturing the sameKANAMURA MASAHITO·Filed 2011·Granted Dec 16, 2014·10 cites·13 claims
- 1588US8866157B2Semiconductor device and method of fabricating the semiconductor deviceFUJITSU LTD·Filed 2013·Granted Oct 21, 2014·9 cites·20 claims
- 1688US8426892B2Compound semiconductor device and method of manufacturing the sameIMANISHI KENJI·Filed 2008·Granted Apr 23, 2013·11 cites·11 claims
- 1786US8765554B2Compound semiconductor device and method for manufacturing the sameIMADA TADAHIRO·Filed 2011·Granted Jul 1, 2014·8 cites·18 claims
- 1885US7002189B2Compound semiconductor deviceFUJITSU LTD·Filed 2004·Granted Feb 21, 2006·24 cites·16 claims
- 1984US11322599B2Enhancement mode III-nitride devices having an Al1-xSixO gate insulatorTRANSPHORM TECH INC·Filed 2017·Granted May 3, 2022·4 cites·22 claims
- 2084US8344419B2Compound semiconductor device and manufacturing method of the sameFUJITSU LTD·Filed 2008·Granted Jan 1, 2013·7 cites·11 claims
- 2183US8896022B2Method of manufacturing compound semiconductor deviceFUJITSU LTD·Filed 2013·Granted Nov 25, 2014·4 cites·9 claims
- 2283US8357602B2Compound semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2010·Granted Jan 22, 2013·6 cites·8 claims
- 2383US7989278B2Compound semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2008·Granted Aug 2, 2011·6 cites·6 claims
- 2483US7875535B2Compound semiconductor device using SiC substrate and its manufactureFUJITSU LTD·Filed 2009·Granted Jan 25, 2011·6 cites·6 claims
- 2581US8264006B2Compound semiconductor device including AIN layer of controlled skewnessIMANISHI KENJI·Filed 2010·Granted Sep 11, 2012·4 cites·5 claims
- 2680US8030638B2Quasi single crystal nitride semiconductor layer grown over polycrystalline SiC substrateFUJITSU LTD·Filed 2008·Granted Oct 4, 2011·6 cites·24 claims
- 2780US7948062B2Semiconductor device and method for manufacturing semiconductor deviceFUJITSU LTD·Filed 2008·Granted May 24, 2011·6 cites·18 claims
- 2878US9608083B2Semiconductor deviceFUJITSU LTD·Filed 2015·Granted Mar 28, 2017·2 cites·10 claims
- 2978US9147761B2Compound semiconductor deviceFUJITSU LTD·Filed 2014·Granted Sep 29, 2015·2 cites·7 claims
- 3078US8030164B2Compound semiconductor structureFUJITSU LTD·Filed 2008·Granted Oct 4, 2011·4 cites·18 claims
- 3178US7838903B2Compound semiconductor device and the fabricating method of the sameFUJITSU LTD·Filed 2009·Granted Nov 23, 2010·4 cites·13 claims
- 3277US8614461B2Compound semiconductor deviceFUJITSU LTD·Filed 2013·Granted Dec 24, 2013·2 cites·7 claims
- 3376US8633494B2Semiconductor device and method for manufacturing semiconductor deviceNISHIMORI MASATO·Filed 2012·Granted Jan 21, 2014·5 cites·18 claims
- 3476US8426260B2Compound semiconductor device and method of manufacturing the sameMIYAJIMA TOYOO·Filed 2011·Granted Apr 23, 2013·5 cites·16 claims
- 3576US8278688B2Compound semiconductor device and manufacturing method thereofOHKI TOSHIHIRO·Filed 2009·Granted Oct 2, 2012·6 cites·14 claims
- 3676US8183572B2Compound semiconductor device and its manufacture methodKIKKAWA TOSHIHIDE·Filed 2009·Granted May 22, 2012·5 cites·8 claims
- 3776US7132699B2Compound semiconductor device and its manufactureFUJITSU LTD·Filed 2004·Granted Nov 7, 2006·18 cites·28 claims
- 3876US5569953ASemiconductor device having an isolation region enriched in oxygenFUJITSU LTD·Filed 1995·Granted Oct 29, 1996·42 cites·3 claims
- 3975US8507329B2Compound semiconductor device and method of manufacturing the sameKIKKAWA TOSHIHIDE·Filed 2012·Granted Aug 13, 2013·3 cites·7 claims
- 4074US9496380B2Compound semiconductor device comprising compound semiconductor layered structure having buffer layer and method of manufacturing the sameMINOURA YUICHI·Filed 2011·Granted Nov 15, 2016·3 cites·15 claims
- 4174US9224848B2Compound semiconductor device and manufacturing method of the sameTRANSPHORM JAPAN INC·Filed 2014·Granted Dec 29, 2015·2 cites·20 claims
- 4271US8044492B2Compound semiconductor device including AIN layer of controlled skewnessFUJITSU LTD·Filed 2008·Granted Oct 25, 2011·2 cites·7 claims
- 4371US5945690ACompound semiconductor deviceFUJITSU LTD·Filed 1998·Granted Aug 31, 1999·33 cites·6 claims
- 4470US9331190B2Compound semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2012·Granted May 3, 2016·2 cites·4 claims
- 4570US8586433B2Compound semiconductor device and manufacturing method thereofMINOURA YUICHI·Filed 2012·Granted Nov 19, 2013·3 cites·16 claims
- 4670US7800133B2Semiconductor device and manufacturing method of the sameFUJITSU LTD·Filed 2008·Granted Sep 21, 2010·3 cites·8 claims
- 4770US7407859B2Compound semiconductor device and its manufactureFUJITSU LTD·Filed 2006·Granted Aug 5, 2008·3 cites·5 claims
- 4870US5952672ASemiconductor device and method for fabricating the sameFUJITSU LTD·Filed 1998·Granted Sep 14, 1999·28 cites·14 claims
- 4969US8581335B2Compound semiconductor device and manufacturing method thereofIMANISHI KENJI·Filed 2011·Granted Nov 12, 2013·2 cites·8 claims
- 5069US7663162B2Compound semiconductor device and doherty amplifier using compound semiconductor deviceFUJITSU LTD·Filed 2008·Granted Feb 16, 2010·2 cites·8 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →