Inventor · disambiguated record
Toshiaki Kuniyasu
Also filed as: KUNIYASU TOSHIAKI
18 granted patents·6 pending applications·284 citations·filing 1999–2018
94Inventor score
Top patents by PatentIndex Score
24 records- 0194US7061166B2Laminated structure and method of manufacturing the sameFUJI PHOTO FILM CO LTD·Filed 2004·Granted Jun 13, 2006·154 cites·13 claims
- 0284US7199509B2Multilayered structure and method of manufacturing the same, and ultrasonic transducerFUJI PHOTO FILM CO LTD·Filed 2005·Granted Apr 3, 2007·9 cites·10 claims
- 0380US6744797B2Semiconductor laser deviceFUJI PHOTO FILM CO LTD·Filed 2002·Granted Jun 1, 2004·17 cites·8 claims
- 0479US7054135B2Multilayered structure, multilayered structure array and method of manufacturing the sameFUJI PHOTO FILM CO LTD·Filed 2005·Granted May 30, 2006·10 cites·20 claims
- 0577US6709513B2Substrate including wide low-defect region for use in semiconductor elementFUJI PHOTO FILM CO LTD·Filed 2002·Granted Mar 23, 2004·19 cites·24 claims
- 0674US6999486B2Semiconductor laser element and semiconductor laserFUJI PHOTO FILM CO LTD·Filed 2004·Granted Feb 14, 2006·9 cites·20 claims
- 0774US6738403B2Semiconductor laser element and semiconductor laserFUJI PHOTO FILM CO LTD·Filed 2001·Granted May 18, 2004·10 cites·10 claims
- 0872US10101318B2Measurement apparatusFUJIFILM CORP·Filed 2016·Granted Oct 16, 2018·1 cites·11 claims
- 0966US7309948B2Ultrasonic transducer and method of manufacturing the sameFUJIFILM CORP·Filed 2004·Granted Dec 18, 2007·15 cites·28 claims
- 1062US6541291B2Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layerFUJI PHOTO FILM CO LTD·Filed 2001·Granted Apr 1, 2003·10 cites·1 claims
- 1157US6268230B1Semiconductor light emitting deviceFUJI PHOTO FILM CO LTD·Filed 1999·Granted Jul 31, 2001·21 cites·4 claims
- 1255US10092910B2Container for centrifugal separation and its production methodFUJIFILM CORP·Filed 2016·Granted Oct 9, 2018·0 cites·13 claims
- 1355US6888866B2Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereofFUJI PHOTO FILM CO LTD·Filed 2001·Granted May 3, 2005·3 cites·16 claims
- 1455US6797416B2GaN substrate formed under controlled growth condition over GaN layer having discretely formed pitsFUJI PHOTO FILM CO LTD·Filed 2003·Granted Sep 28, 2004·4 cites·24 claims
- 1553US10639625B2Pipette tip and liquid injection methodFUJIFILM CORP·Filed 2018·Granted May 5, 2020·0 cites·19 claims
- 1649US10842928B2Adapter for blood dispensingFUJIFILM CORP·Filed 2017·Granted Nov 24, 2020·0 cites·5 claims
- 1748US6859478B2Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layerFUJI PHOTO FILM CO LTD·Filed 2003·Granted Feb 22, 2005·2 cites·5 claims
- 1847US2005164420A1Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereofFUJI PHOTO FILM CO LTD·Filed 2005·Application pending·0 cites
- 1946US2009247875A1Ultrasonic generatorFUJIFILM CORP·Filed 2006·Application pending·0 cites
- 2045US2006241473A1Ultrasonic probe and producing method thereforFUJI PHOTO FILM CO LTD·Filed 2006·Application pending·0 cites
- 2138US6901100B2Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injectionFUJI PHOTO FILM CO LTD·Filed 2002·Granted May 31, 2005·0 cites·19 claims
- 2237US2003047746A1GaN substrate formed over GaN layer having discretely formed minute holes produced by use of discretely arranged growth suppression mask elementsFUJI PHOTO FILM CO LTD·Filed 2002·Application pending·0 cites
- 2337US2016100786A1Adapter for blood sample dispensing, and dispensing kit and needle kit provided therewithFUJIFILM CORP·Filed 2015·Application pending·0 cites
- 2437US2003102777A1Ultrasonic transducer and method of manufacturing the sameFUJI PHOTO FILM CO LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →