Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof

Abstract

An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO 2 film is formed on the entire surface. After a window is formed in a portion of the SiO 2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO 2 film other than the device perimeter.

1 . A method of fabricating a semiconductor laser device, comprising the steps of: 
 stacking a cladding layer and a contact layer on a semiconductor layer including an active layer, in the recited order;    forming a photoresist film, which has two windows extending from one of two resonator end faces to the other, on said contact layer through a mask, and then etching said cladding layer and said contact layer to form two grooves, corresponding to said two windows, and a ridge portion between said two grooves;    forming a window in at least a portion of said photoresist film near one of the two resonator end faces of said ridge portion through a mask, and then selectively etching and removing a portion of said contact layer which is near said one resonator end face; and    lifting off and removing said photoresist film.    
     
     
         2 . The method as set forth in  claim 1 , wherein said cladding layer comprises AlGaAs, said contact layer comprises GaAs, and said contact layer is etched with an NH 3 :H 2 O 2  mixed water solution.