Inventor · disambiguated record
Toan Tran
Also filed as: TRAN TOAN · TRAN TOAN V
13 granted patents·5 pending applications·409 citations·filing 1986–2022
93Inventor score
Files withTEXAS INSTRUMENTS INC11NAT SEMICONDUCTOR CORP4GULDI RICHARD L1LSI CORP1TEXAS INSTR INCROPORATED1
Top patents by PatentIndex Score
18 records- 0194US5546433ADigital phase lock loop having frequency offset cancellation circuitryNAT SEMICONDUCTOR CORP·Filed 1995·Granted Aug 13, 1996·120 cites·4 claims
- 0293US8824085B2Laser power control in a heat-assisted magnetic recording systemLSI CORP·Filed 2012·Granted Sep 2, 2014·20 cites·19 claims
- 0391US5432476ADifferential to single-ended converterNAT SEMICONDUCTOR CORP·Filed 1993·Granted Jul 11, 1995·69 cites·8 claims
- 0489US5065208AIntegrated bipolar and CMOS transistor with titanium nitride interconnectionsTEXAS INSTRUMENTS INC·Filed 1990·Granted Nov 12, 1991·82 cites·23 claims
- 0588US7772867B2Structures for testing and locating defects in integrated circuitsTEXAS INSTRUMENTS INC·Filed 2008·Granted Aug 10, 2010·13 cites·17 claims
- 0678US7560792B2Reliable high voltage gate dielectric layers using a dual nitridation processTEXAS INSTRUMENTS INC·Filed 2007·Granted Jul 14, 2009·5 cites·4 claims
- 0771US4792835AMOS programmable memories using a metal fuse link and process for making the sameTEXAS INSTRUMENTS INC·Filed 1986·Granted Dec 20, 1988·39 cites·20 claims
- 0864US5408694AReceiver squelch circuit with adjustable thresholdNAT SEMICONDUCTOR CORP·Filed 1993·Granted Apr 18, 1995·22 cites·2 claims
- 0958US7183165B2Reliable high voltage gate dielectric layers using a dual nitridation processTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 27, 2007·5 cites·6 claims
- 1056US6687973B2Optimized metal fuse processTEXAS INSTRUMENTS INC·Filed 2001·Granted Feb 10, 2004·8 cites·13 claims
- 1153US2008116542A1Gate Dielectric Having a Flat Nitrogen Profile and Method of Manufacture ThereforTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1252US2024040783A1Flash memory with iread tuningTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 1351US7345001B2Gate dielectric having a flat nitrogen profile and method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 18, 2008·2 cites·13 claims
- 1446US5418821AMethod and apparatus for sample-data receiver squelchNAT SEMICONDUCTOR CORP·Filed 1992·Granted May 23, 1995·12 cites·5 claims
- 1546US2009102501A1Test structures for e-beam testing of systematic and random defects in integrated circuitsGULDI RICHARD L·Filed 2007·Application pending·0 cites
- 1645US5766369AMethod to reduce particulates in device manufactureTEXAS INSTRUMENTS INC·Filed 1996·Granted Jun 16, 1998·12 cites·10 claims
- 1743US2008268589A1Shallow trench divot control postTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 1834US2004191999A1Semiconductor structure and method of fabricationTEXAS INSTR INCROPORATED·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →