Gate Dielectric Having a Flat Nitrogen Profile and Method of Manufacture Therefor

Abstract

The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. In one embodiment, the method of manufacturing the gate dielectric includes forming a gate dielectric layer ( 410 ) on a substrate ( 310 ), and subjecting the gate dielectric layer ( 410 ) to a nitrogen containing plasma process ( 510 ), wherein the nitrogen containing plasma process ( 510 ) has a ratio of helium to nitrogen of 3:1 or greater.

1 - 9 . (canceled)  
   
   
       10 . A semiconductor device, comprising: 
 a gate dielectric layer located on a substrate, the gate dielectric layer having nitrogen included therein, wherein a concentration of the nitrogen in the gate dielectric layer varies by less than about 10%; and    a gate electrode located over the gate dielectric layer.    
   
   
       11 . The semiconductor device as recited in  claim 10  wherein the gate dielectric layer has a thickness of 2.5 nm or less.  
   
   
       12 . The semiconductor device as recited in  claim 10  wherein the gate dielectric layer has a thickness ranging from about 2.5 nm to about 1.5 nm.  
   
   
       13 - 20 . (canceled)