Inventor · disambiguated record
Toshitake Yaegashi
Also filed as: YAEGASHI TOSHITAKE
84 granted patents·14 pending applications·1,479 citations·filing 1998–2017
99Inventor score
Files withTOSHIBA KK68YAEGASHI TOSHITAKE25ICHIGE MASAYUKI2TOKYO SHIBAURA ELECTRIC CO1TOSHIBA MEMORY CORP1
Top patents by PatentIndex Score
98 records- 0198US7057936B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Jun 6, 2006·179 cites·20 claims
- 0298US6894931B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2003·Granted May 17, 2005·140 cites·36 claims
- 0398US6859394B2NAND type non-volatile semiconductor memory deviceTOSHIBA KK·Filed 2002·Granted Feb 22, 2005·140 cites·26 claims
- 0497US7928497B2Nonvolatile semiconductor memory and manufacturing method thereofTOSHIBA KK·Filed 2007·Granted Apr 19, 2011·53 cites·17 claims
- 0597US7274075B2Nonvolatile semiconductor memory device having pair of selection transistors with different source and drain impurity concentrations and with different channel dopant concentrationsTOSHIBA KK·Filed 2006·Granted Sep 25, 2007·30 cites·22 claims
- 0697US6353242B1Nonvolatile semiconductor memoryTOSHIBA KK·Filed 1999·Granted Mar 5, 2002·127 cites·22 claims
- 0797US6265739B1Non-volatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 1998·Granted Jul 24, 2001·120 cites·16 claims
- 0896US6859395B2NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltagesTOSHIBA KK·Filed 2003·Granted Feb 22, 2005·106 cites·41 claims
- 0995US6512253B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2001·Granted Jan 28, 2003·45 cites·20 claims
- 1094US6835987B2Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structuresTOSHIBA KK·Filed 2002·Granted Dec 28, 2004·49 cites·1 claims
- 1193US7309891B2Non-volatile and memory semiconductor integrated circuitTOSHIBA KK·Filed 2005·Granted Dec 18, 2007·16 cites·20 claims
- 1293US7151295B2Non-volatile semiconductor memory device and process of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Dec 19, 2006·48 cites·9 claims
- 1392US6930921B2NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltagesTOSHIBA KK·Filed 2004·Granted Aug 16, 2005·56 cites·14 claims
- 1490US7442978B2Semiconductor memory device including multi-layer gate structureTOSHIBA KK·Filed 2006·Granted Oct 28, 2008·10 cites·5 claims
- 1589US7504304B2Non-volatile semiconductor memory device and process of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Mar 17, 2009·10 cites·8 claims
- 1689US7122869B2Nonvolatile semiconductor memory device in which selection transistors and memory transistors have different impurity concentration distributionsTOSHIBA KK·Filed 2005·Granted Oct 17, 2006·9 cites·6 claims
- 1789US7115930B2Semiconductor memory device including multi-layer gate structureTOSHIBA KK·Filed 2005·Granted Oct 3, 2006·10 cites·9 claims
- 1889US6878985B2Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrodeTOSHIBA KK·Filed 2003·Granted Apr 12, 2005·37 cites·7 claims
- 1988US7692235B2Nonvolatile semiconductor memory device including memory cells formed to have double-layered gate electrodesTOSHIBA KK·Filed 2007·Granted Apr 6, 2010·12 cites·7 claims
- 2088US6995414B2Semiconductor memory device including multi-layer gate structureTOSHIBA KK·Filed 2002·Granted Feb 7, 2006·23 cites·14 claims
- 2186US7893477B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2007·Granted Feb 22, 2011·6 cites·20 claims
- 2286US6534867B1Semiconductor device, semiconductor element and method for producing sameTOSHIBA KK·Filed 2000·Granted Mar 18, 2003·34 cites·6 claims
- 2385US7425739B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2005·Granted Sep 16, 2008·6 cites·12 claims
- 2485US6974979B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2002·Granted Dec 13, 2005·17 cites·14 claims
- 2584US8637915B2Nonvolatile semiconductor memoryICHIGE MASAYUKI·Filed 2011·Granted Jan 28, 2014·7 cites·20 claims
- 2684US8222687B2Nonvolatile semiconductor storage device and method of manufacture thereofYAEGASHI TOSHITAKE·Filed 2009·Granted Jul 17, 2012·7 cites·19 claims
- 2783US7687346B2Method of manufacturing a non-volatile NAND memory semiconductor integrated circuitTOSHIBA KK·Filed 2007·Granted Mar 30, 2010·5 cites·19 claims
- 2882US9691779B2Nonvolatile semiconductor storage device and method of manufacture thereofTOSHIBA KK·Filed 2014·Granted Jun 27, 2017·2 cites·18 claims
- 2980US7888728B2Non-volatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 2008·Granted Feb 15, 2011·4 cites·8 claims
- 3080US7629638B2Semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2005·Granted Dec 8, 2009·7 cites·9 claims
- 3180US6472701B2Non-volatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 2000·Granted Oct 29, 2002·15 cites·2 claims
- 3279US8569828B2Nonvolatile semiconductor storage device and method of manufacture thereofYAEGASHI TOSHITAKE·Filed 2012·Granted Oct 29, 2013·3 cites·19 claims
- 3379US7982259B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2007·Granted Jul 19, 2011·6 cites·18 claims
- 3478US7332762B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2006·Granted Feb 19, 2008·3 cites·15 claims
- 3578US7005345B2Non-volatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 2004·Granted Feb 28, 2006·12 cites·2 claims
- 3677US7977728B2Non-volatile NAND memory semiconductor integrated circuitTOSHIBA KK·Filed 2010·Granted Jul 12, 2011·3 cites·12 claims
- 3775US8878282B2Nonvolatile semiconductor storage device and method of manufacture thereofTOSHIBA KK·Filed 2013·Granted Nov 4, 2014·2 cites·8 claims
- 3875US8211767B2Nonvolatile semiconductor memory and manufacturing method thereofYAEGASHI TOSHITAKE·Filed 2011·Granted Jul 3, 2012·3 cites·4 claims
- 3975US7948038B2Non-volatile semiconductor memory device and process of manufacturing the sameTOSHIBA KK·Filed 2010·Granted May 24, 2011·2 cites·18 claims
- 4075US7184309B2Non-volatile semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Feb 27, 2007·19 cites·21 claims
- 4174US8084802B2Nonvolatile semiconductor memoryWATANABE HIROSHI·Filed 2011·Granted Dec 27, 2011·2 cites·44 claims
- 4274US6816411B2Non-volatile semiconductor storage device composed of NAND type EEPROM and deletion verification method in non-volatile semiconductor storage deviceTOKYO SHIBAURA ELECTRIC CO·Filed 2003·Granted Nov 9, 2004·21 cites·28 claims
- 4372US8541827B2Semiconductor memory device including multi-layer gate structureYAEGASHI TOSHITAKE·Filed 2012·Granted Sep 24, 2013·1 cites·12 claims
- 4471US8324674B2Semiconductor memory device including multi-layer gate structureYAEGASHI TOSHITAKE·Filed 2012·Granted Dec 4, 2012·1 cites·17 claims
- 4571US8017467B2Semiconductor memory device including multi-layer gate structureTOSHIBA KK·Filed 2010·Granted Sep 13, 2011·1 cites·10 claims
- 4671US7842993B2Nonvolatile semiconductor memory device suppressing fluctuation in threshold voltageTOSHIBA KK·Filed 2009·Granted Nov 30, 2010·4 cites·20 claims
- 4771US6949794B2Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structuresTOSHIBA KK·Filed 2004·Granted Sep 27, 2005·8 cites·15 claims
- 4870US8455937B2Nonvolatile semiconductor memory device in which decrease in coupling ratio of memory cells is suppressedYAEGASHI TOSHITAKE·Filed 2009·Granted Jun 4, 2013·2 cites·5 claims
- 4970US8338252B2Non-volatile semiconductor memory device and method of manufacturing the sameYAEGASHI TOSHITAKE·Filed 2010·Granted Dec 25, 2012·1 cites·15 claims
- 5070US8304826B2Nonvolatile semiconductor memory device including memory cells formed to have double-layered gate electrodesYAEGASHI TOSHITAKE·Filed 2010·Granted Nov 6, 2012·2 cites·6 claims
Showing the top 50 of 98 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →